US5171401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching indium tin oxide
Assignee: Eastman Kodak Co
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Filing: 1990-06-04
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Granted: 1992-12-15
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Expires: 2010-06-04
Abstract
Abstract ITO is etched by a plasma containing CH 3 • and Ar + . Argon ions cause a significant increase in the etch rate.
Inventors
- 👤 Paul L. Roselle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 03:48
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
32 words
A method of etching ITO comprising the steps of: forming a plasma from a gas mixture of CH 4 , H 2 , and Ar; and etching the ITO with the plasma.
Claim 2
Independent Claim
32 words
A method of etching ITO comprising the steps of: forming a plasma from a gas mixture of CH 4 , H 2 , and Ar; and etching the ITO with the plasma.
Claim 3
Independent Claim
68 words
A method of etching ITO deposited on an SiO 2 layer on a silicon substrate, comprising the steps of: (a) depositing and patterning a microlithographic mask on the ITO surface to expose portions of the ITO; and (b) igniting a plasma from a mixture of CH 4 , H 2 , and argon gases which etch the exposed ITO portions thereby transferring the pattern into the ITO, anisotropically.
Claim 4
Independent Claim
68 words
A method of etching ITO deposited on an SiO 2 layer on a silicon substrate, comprising the steps of: (a) depositing and patterning a microlithographic mask on the ITO surface to expose portions of the ITO; and (b) igniting a plasma from a mixture of CH 4 , H 2 , and argon gases which etch the exposed ITO portions thereby transferring the pattern into the ITO, anisotropically.
Claim 5
Dependent Claim
18 words
The method of claim 2 wherein the ratio CH 4 , H 2 , and argon is equal.
Claim 6
Independent Claim
112 words
A method for etching ITO on a substrate comprising the steps of: (a) depositing and patterning a microlithographic mask on the ITO surface to expose portions of the ITO; (b) forming a plasma by mixing CH 4 gas, H 2 gas and argon in a chamber at a pressure selected to prevent polymerization; (c) igniting the plasma by subjecting the CH 4 , H 2 , argon mixture to RF or microwave radiation or other suitable electric field, thereby forming CH 3 . radicals; and (d) etching the exposed ITO portions with the CH 3 . radicals, thereby transforming the pattern into the ITO anisotropically, the argon enhancing the ITO etch rate.
Claim 7
Independent Claim
112 words
A method for etching ITO on a substrate comprising the steps of: (a) depositing and patterning a microlithographic mask on the ITO surface to expose portions of the ITO; (b) forming a plasma by mixing CH 4 gas, H 2 gas and argon in a chamber at a pressure selected to prevent polymerization; (c) igniting the plasma by subjecting the CH 4 , H 2 , argon mixture to RF or microwave radiation or other suitable electric field, thereby forming CH 3 . radicals; and (d) etching the exposed ITO portions with the CH 3 . radicals, thereby transforming the pattern into the ITO anisotropically, the argon enhancing the ITO etch rate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-15 | 1996-06-15 | 1996-12-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-15 | 2000-06-15 | 2000-12-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-15 | 2004-06-15 | 2004-12-15 | $7700.00 | Window Closed / Lapsed |