US4812416A
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Method for executing a reproducible glow discharge
Assignee: Individual
•
Filing: 1986-11-28
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Granted: 1989-03-14
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Expires: 2006-11-28
Abstract
Abstract In order to be able to check whether or not a glow procedure is executed properly, i.e. reproducibly, the temporal course of the formation of characteristic stable reaction products is traced mass spectrometrically.
Inventors
- 👤 Gerd Hewig
- 👤 Berthold Schum
- 👤 Jorg Worner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:30
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/169; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
168 words
Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressure of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of a Cu 2-x S/CdS thin film semiconductor solar cell with 0≦x≦1, in which the Cu 2-x S layer is exposed to a glow discharge process in a hydrogen atmosphere, which includes the steps of: (a) reduction by the glow discharge of Cu 2-z O with 0≦z≦1 present on the Cu 2-x S layer and of excess sulphur ions from the Cu 2-x S layer until a highly stoichiometric Cu 2 .0000 S layer is produced; (b) formation of an inversion layer on and from the highly stoichiometric Cu 2 .0000 S layer by way of adsorption of negatively charged hydrogen atoms (H - ions) from the hydrogen atmosphere of the glow discharge; and (c) reduction of the free surface of the inversion layer to elemental copper.
Claim 2
Dependent Claim
168 words
Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressure of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of a Cu 2-x S/CdS thin film semiconductor solar cell with 0≦x≦1, in which the Cu 2-x S layer is exposed to a glow discharge process in a hydrogen atmosphere, which includes the steps of: (a) reduction by the glow discharge of Cu 2-z O with 0≦z≦1 present on the Cu 2-x S layer and of excess sulphur ions from the Cu 2-x S layer until a highly stoichiometric Cu 2 .0000 S layer is produced; (b) formation of an inversion layer on and from the highly stoichiometric Cu 2 .0000 S layer by way of adsorption of negatively charged hydrogen atoms (H - ions) from the hydrogen atmosphere of the glow discharge; and (c) reduction of the free surface of the inversion layer to elemental copper.
Claim 3
Dependent Claim
18 words
Method according to claim 1, wherein the reduction is executed in the positive column of the glow discharge.
Claim 4
Dependent Claim
61 words
Method according to claim 1, wherein the glow discharge process for the formation of the inversion layer occurs in an evacuated space that is first set at a pressure p˜10 -6 mbar (10 4 Pa) and that the space is subsequently flooded with hydrogen for attaining a pressure of 0.5 mbar (50 PA) in order to execute the glow discharge process.
Claim 5
Dependent Claim
32 words
Method according to claim 3, wherein the glow discharge process occurs at a current density of 10 μA/cm 2 of semiconductor layer at a voltage of 300 V applied between the electrodes.
Claim 6
Dependent Claim
25 words
Method according to claim 1, wherein the hydrogen atomsphere of the glow space is exchanged during the glow discharge process without altering the internal pressure.
Claim 7
Dependent Claim
13 words
Method according to claim 5, wherein the exchange occurs approximately twice per minute.
Claim 8
Dependent Claim
96 words
Method according to claim 1, wherein the temporal course of the glow process is set in such a way that the H 2 S partial pressure resulting fromthe reduction of the Cu 2-x S layer, measured in a continuously exchanging atmosphere, first increases sharply and, after reaching a maximum, decreases sharply again (range I) with the maximum being shifted toward the shorter period, followed by a gradual decrease in the H 2 S partial pressure until a minimum is reached (range II), and after which the H 2 S partial pressure increases almost continuously (range III).
Claim 9
Dependent Claim
24 words
Method according to claim 7, wherenthe ratio of the area of range I to that of range II is A I :A II =(2.5+/-0.5):1.
Claim 10
Dependent Claim
71 words
Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressures of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of thin film semeconductors, wherein the temporal course of characteristic volatile hydrogen products of said semiconductors is traced and wherein the semiconductor material is SnO 2 or CuInSe 2 .
Claim 11
Dependent Claim
71 words
Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressures of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of thin film semeconductors, wherein the temporal course of characteristic volatile hydrogen products of said semiconductors is traced and wherein the semiconductor material is SnO 2 or CuInSe 2 .
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1992-03-13 | 1992-09-12 | 1993-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-13 | 1996-09-12 | 1997-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-13 | 2000-09-12 | 2001-03-14 | $7700.00 | Window Closed / Lapsed |