US5278450A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor contact with discontinuous noble metal
Assignee: US Philips Corp
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Filing: 1992-01-08
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Granted: 1994-01-11
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Expires: 2012-01-08
Abstract
Abstract A semiconductor device with a monocrystalline silicon body (1) is provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminum metallization. To avoid undesirable separation of silicon, a discontinuous nucleus layer (5) of a metal nobler than silicon is formed on the silicon body (1) in the contact holes (3) preceding the provision of the metallization (4). Metals such as palladium and copper may be used to form the discontinuous layer.
Inventors
- 👤 Robertus A. M. Wolters
- 👤 Edwin T. Swart
- 👤 Andreas M. T. P. van der Putten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:50
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/40; H10P14/46; H10D64/0111; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
68 words
A semiconductor device comprising a monocrystalline silicon body which is provided at one side with a dielectric layer in which contact holes are present through which the silicon body is contact with a metallization comprising aluminum and silicon, characterized in that a discontinuous nucleus layer of a metal nobler than silicon is present in the contact holes between the silicon body and the metallization comprising aluminum and silicon.
Claim 2
Dependent Claim
68 words
A semiconductor device comprising a monocrystalline silicon body which is provided at one side with a dielectric layer in which contact holes are present through which the silicon body is contact with a metallization comprising aluminum and silicon, characterized in that a discontinuous nucleus layer of a metal nobler than silicon is present in the contact holes between the silicon body and the metallization comprising aluminum and silicon.
Claim 3
Dependent Claim
29 words
A semiconductor device as claimed in claim 1, characterized in that the discontinuous nucleus layer is formed of a metal selected from the group consisting of palladium and copper.
References Cited (Backward Citations)
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Cited
US4431685A
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US4520554A
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US4931845A
Cited
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Cited
US5158860A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-10 | 1997-07-12 | 1998-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-10 | 2001-07-12 | 2002-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-10 | 2005-07-12 | 2006-01-11 | $7700.00 | Window Closed / Lapsed |