US5017516A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1990-02-02
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Granted: 1991-05-21
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Expires: 2010-02-02
Abstract
Abstract By using a nucleating solution having a low concentration of PdCl 2 at an increased temperature, contact holes can be nucleated in a selective manner and, subsequently, metallized in an electroless bath, said contact holes being etched by means of plasma etching in dielectric layers of VLSI devices having a silicon semiconductor body.
Inventors
- 👤 Andreas M. T. P. van der Putten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P; H10P14/00; H10P14/40; H10P14/46
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising a dielectric layer in which contact holes are etched, after which electrically conductive plugs are formed in the contact holes by means of an electroless metallization bath, said plugs contacting a silicon-containing semiconductor material, characterized in that the contact holes are etched by means of plasma etching and that the electroless metallization operation is preceded by a treatment at a temperature between 40° and 95° C. in an aqueous nucleating solution which contains HF and between 5·10 -4 and 0.14 mmol of a palladium salt per liter.
Claim 2
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising a dielectric layer in which contact holes are etched, after which electrically conductive plugs are formed in the contact holes by means of an electroless metallization bath, said plugs contacting a silicon-containing semiconductor material, characterized in that the contact holes are etched by means of plasma etching and that the electroless metallization operation is preceded by a treatment at a temperature between 40° and 95° C. in an aqueous nucleating solution which contains HF and between 5·10 -4 and 0.14 mmol of a palladium salt per liter.
Claim 3
Dependent Claim
30 words
A method as claimed in claim 1, characterized in that a palladium-salt concentration of 2.8·10 -2 mmol per liter is used, the temperature of the nucleating solution being 70° C.
Claim 4
Dependent Claim
22 words
A method as claimed in claim 1, characterized in that an alkali-free acid nickel bath is used as the electroless metallization bath.
Claim 5
Dependent Claim
18 words
A method as claimed in claim 1, characterized in that silicon is used as the silicon-containing semiconductor material.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 1, characterized in that the contact holes are etched by means of reactive ion etching (RIE).
Claim 7
Dependent Claim
18 words
A method as claimed in claim 1, wherein the nucleating solution contains about 0.01-10 wt. % of HF.
Claim 8
Dependent Claim
14 words
A method as claimed in claim 3, wherein the silicon-containing semiconductor material is silicon.
Claim 9
Dependent Claim
15 words
The method of claim 7, wherein the nucleating solution contains 0.01-10 wt. % of HF.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |