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US5278101A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device and method for manufacturing the same

Assignee: Toshiba Corp
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Filing: 1992-06-26
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Granted: 1994-01-11
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Expires: 2012-06-26
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Abstract

Abstract A semiconductor device includes a first frame having a bed, a semiconductor chip mounted on the bed and having a bonding pad, a second frame having an inner lead located above the semiconductor chip, a bonding wire connecting the bonding pad of the semiconductor chip to the tip end of the inner lead, and a shock-absorbing layer which is adhered at least to that surface portion of the tip end of the inner lead which faces the semiconductor chip.

Inventors

  • 👤 Kazuhisa Ikenoue

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 20:20
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/458; H10W70/411; H10W70/415; H10W70/421; H10W70/442; H10W72/00; H10W72/50; H10W72/541; H10W72/5449; H10W72/851; H10W72/853; H10W72/865; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 155 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a plate-like second frame material; applying a shock-absorbing film layer to a predetermined portion on one side of the second frame material; punching the second frame material, applied with the shock-absorbing film layer, into a predetermined shape, to thereby form a second frame having an inner lead and a shock-absorbing film layer applied at least to the tip end of the inner lead; preparing a first frame having a bed; mounting a semiconductor chip having a bonding pad on the bed; adjusting the position of the second frame such that the inner lead of the second frame is located above the semiconductor chip and such that the shock-absorbing film layer faces the surface of the semiconductor chip; and connecting the bonding pad of the semiconductor chip to the tip end of the inner lead located above the semiconductor chip by a bonding wire.
Claim 2
Independent Claim 155 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a plate-like second frame material; applying a shock-absorbing film layer to a predetermined portion on one side of the second frame material; punching the second frame material, applied with the shock-absorbing film layer, into a predetermined shape, to thereby form a second frame having an inner lead and a shock-absorbing film layer applied at least to the tip end of the inner lead; preparing a first frame having a bed; mounting a semiconductor chip having a bonding pad on the bed; adjusting the position of the second frame such that the inner lead of the second frame is located above the semiconductor chip and such that the shock-absorbing film layer faces the surface of the semiconductor chip; and connecting the bonding pad of the semiconductor chip to the tip end of the inner lead located above the semiconductor chip by a bonding wire.
Claim 3
Dependent Claim 26 words
A method according to claim 1, wherein said applying step includes a step of adhering the shock-absorbing film layer to the second frame material by printing.
Claim 4
Dependent Claim 29 words
A method according to claim 1, further comprising a step of resin-sealing the first frame, the semiconductor chip, the second frame, the bonding wire, and the shock-absorbing film layer.
Claim 5
Dependent Claim 30 words
A method according to claim 1, wherein said punching step includes a step of punching the second frame material from the side to which the shock-absorbing film layer is applied.
Claim 6
Dependent Claim 72 words
A method according to claim 1, wherein the step of punching the second frame material includes punching the second frame material to form a second frame having at least one inner lead with a shock-absorbing film layer applied at least to the tip end of the inner lead, each respective shock-absorbing film layer being separate from all other shock-absorbing film layers applied at least to the tip end of an inner lead.

References Cited (Backward Citations)

JPS5240062A Cited
JPS5556650A Cited
US4721994A Cited
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US5086018A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-10 1997-07-12 1998-01-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-10 2001-07-12 2002-01-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-10 2005-07-12 2006-01-11 $7700.00 Window Closed / Lapsed

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