EP0354696A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device assembly comprising a lead frame structure
Assignee: Toshiba Corp
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Filing: 1989-07-31
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Granted: —
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Expires: 2009-07-31
Abstract
Abstract First (30) and second (40) frame bodies are used to fabricate a semiconductor device. The first frame body (30) includes a die pad (33). The second frame body (40) includes a plurality of leads (42). The die pad is depressed by a predetermined amount (h) which is equal or greater than the thickness of a semiconductor chip (50) to be mounted on the die pad. The two frame bodies are welded, and wire bonding and cutting of the leads are performed.
Inventors
- 👤 Kenji Intellectual Property Division Takahashi
- 👤 Yasuhiro Intellectual Property Division Yamaji
- 👤 Susumu Intellectual Property Division Harada
- 👤 Toshiharu Intellectual Property Division Sakurai
- 👤 Masashi Intellectual Property Division Muromachi
- 👤 Hiroshi Intellectual Property Division Harada
- 👤 Kazuichi Intellectual Property Division Komenaka
- 👤 Mitsugu Intellectual Property Division Miyamoto
- 👤 Kazuo Intellectual Property Division Numajiri
- 👤 Haruki Intellectual Property Division Shimakawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 18:16
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/415; H10W70/01; H10W70/04; H10W70/421; H10W70/433; H10W70/442; H10W70/456; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/073; H10W72/50; H10W74/00; H10W74/10; H10W74/111; H10W74/121; H10W90/00; H10W90/811; H10W72/07351; H10W72/07352; H10W72/30; H10W72/321; H10W72/531; H10W72/536; H10W72/5363; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
146 words
A frame body for manufacturing a semiconductor device including a semiconductor chip (50), characterized by comprising: first frame means (30) including; a die pad portion (33) having a main surface for supporting the semiconductor chip; a first frame portion (31, 36) having a first surface, surrounding the die pad portion; connecting means 32) for connecting the die pad portion to a predetermined portion of the first frame portion so as to produce an offset (h) between the main surface and the first surface; and second frame means (40) to be combined with the first frame means, including; a second frame portion (41, 46) ; a central portion surrounded by the second frame portion; a plurality of lead portions (42) extending from the second frame portion to the central portion so as to overlap the semiconductor chip when the first and the second frame bodies are combined.
Claim 2
Dependent Claim
146 words
A frame body for manufacturing a semiconductor device including a semiconductor chip (50), characterized by comprising: first frame means (30) including; a die pad portion (33) having a main surface for supporting the semiconductor chip; a first frame portion (31, 36) having a first surface, surrounding the die pad portion; connecting means 32) for connecting the die pad portion to a predetermined portion of the first frame portion so as to produce an offset (h) between the main surface and the first surface; and second frame means (40) to be combined with the first frame means, including; a second frame portion (41, 46) ; a central portion surrounded by the second frame portion; a plurality of lead portions (42) extending from the second frame portion to the central portion so as to overlap the semiconductor chip when the first and the second frame bodies are combined.
Claim 3
Dependent Claim
19 words
The frame body according to claim 1, further comprising an insulating buffer layer (57) formed on the lead portions.
Claim 4
Dependent Claim
42 words
The frame body according to claim 1, wherein each frame portion is made of a metal having a predetermined melting point, and each frame portion has a specified metal layer (34, 44) which has lower melting point than the predetermined melting point.
Claim 5
Dependent Claim
26 words
The frame body according to claim 3, wherein each frame portion is made of copper based material, and the specified metal layer is made of tin.
Claim 6
Dependent Claim
31 words
The frame body according to claim 1, wherein the second frame portion includes a first notch portion (49) at an area corresponding to the predetermined portion of the first frame portion.
Claim 7
Dependent Claim
27 words
The frame body according to claim 5, wherein the first frame portion includes a second notch portion (39) for increasing the length of the connecting means (32).
Claim 8
Dependent Claim
48 words
The frame body according to claim 1, wherein the first frame portion has a first predetermined inner dimension and the second frame portion has a second predetermined inner dimension, and the first predetermined inner dimension is wider than the second predetermined inner dimension by a predetermined amount (d).
Claim 9
Dependent Claim
71 words
A frame body used for fabricating a semiconductor device including a semiconductor chip (50) of predetermined thickness, characterized by comprising: a frame portion (31, 36) forming a closed loop, having a pair of notches (39) for defining a predetermined position therebetween; a die pad portion (33) for supporting the semiconductor chip thereon; and tie bar means (32) for connecting the die pad portion to the predetermined portion of the frame portion.
Claim 10
Dependent Claim
71 words
A frame body used for fabricating a semiconductor device including a semiconductor chip (50) of predetermined thickness, characterized by comprising: a frame portion (31, 36) forming a closed loop, having a pair of notches (39) for defining a predetermined position therebetween; a die pad portion (33) for supporting the semiconductor chip thereon; and tie bar means (32) for connecting the die pad portion to the predetermined portion of the frame portion.
Claim 11
Dependent Claim
55 words
The frame body according to claim 8, wherein the frame portion has a first surface, the die pad portion has a second surface for supporting the semiconductor chip, and the tie bar means produces an offset (h) between the first surface and the second surface equal or greater than the thickness of the semiconductor chip.
Claim 12
Dependent Claim
142 words
A semiconductor device characterized by comprising: a semiconductor chip (50) having a plurality of bonding pads (54) formed on a main surface thereof; semiconductor chip supporting means, including; a die pad portion (33) having a first surface for supporting the semiconductor chip, a die pad supporting portion (32a) having a second surface, a tie bar portion (32b) for producing a predetermined offset (h) between the second surface of the die pad supporting portion and the first surface of the die pad portion; a plurality of inner leads (42a), each having third and fourth surfaces, the fourth surface being coincident with a plane formed by the second surface of the die pad supporting portion and overlapping the semiconductor chip on the main surface; and a plurality of bonding wires (51) for connecting the third surface of the inner lead to corresponding bonding pad.
Claim 13
Dependent Claim
142 words
A semiconductor device characterized by comprising: a semiconductor chip (50) having a plurality of bonding pads (54) formed on a main surface thereof; semiconductor chip supporting means, including; a die pad portion (33) having a first surface for supporting the semiconductor chip, a die pad supporting portion (32a) having a second surface, a tie bar portion (32b) for producing a predetermined offset (h) between the second surface of the die pad supporting portion and the first surface of the die pad portion; a plurality of inner leads (42a), each having third and fourth surfaces, the fourth surface being coincident with a plane formed by the second surface of the die pad supporting portion and overlapping the semiconductor chip on the main surface; and a plurality of bonding wires (51) for connecting the third surface of the inner lead to corresponding bonding pad.
Claim 14
Dependent Claim
27 words
The semiconductor device according to claim 10, further comprising an insulating buffer layer (57, 58) between the inner lead and the main surface of the semiconductor chip.
Claim 15
Dependent Claim
19 words
The semiconductor device according to claim 10, wherein the insulating buffer layer (57) is formed on the inner lead.
Claim 16
Dependent Claim
23 words
The semiconductor device according to claim 10, wherein the insulating buffer layer (58) is formed on the main surface of the semiconductor chip.
Claim 17
Dependent Claim
164 words
A process for manufacturing a semiconductor device, characaterized by comprising the steps of: preparing a first frame body (30), including; a die pad portion (33) for supporting a semiconductor chip; a first frame portion (31, 36) surrounding the die pad portion; and connecting means (32) for connecting the die pad portion to the first frame portion; preparing a second frame body (40), including; a second frame portion (41, 46); a central portion surrounded by the second frame portion; a plurality of lead portions (42) extending from the second frame portion to the central portion; mounting a semiconductor chip (50) having a plurality of bonding pads (54) on a main surface thereof on the die pad portion of the first frame body; welding the first and the second frame bodies; connecting the bonding pads on the semiconductor chip to the lead portions of the second lead frame body; and separating the lead portions and the die pad portion from the first and second frame bodies.
Claim 18
Dependent Claim
164 words
A process for manufacturing a semiconductor device, characaterized by comprising the steps of: preparing a first frame body (30), including; a die pad portion (33) for supporting a semiconductor chip; a first frame portion (31, 36) surrounding the die pad portion; and connecting means (32) for connecting the die pad portion to the first frame portion; preparing a second frame body (40), including; a second frame portion (41, 46); a central portion surrounded by the second frame portion; a plurality of lead portions (42) extending from the second frame portion to the central portion; mounting a semiconductor chip (50) having a plurality of bonding pads (54) on a main surface thereof on the die pad portion of the first frame body; welding the first and the second frame bodies; connecting the bonding pads on the semiconductor chip to the lead portions of the second lead frame body; and separating the lead portions and the die pad portion from the first and second frame bodies.
Claim 19
Dependent Claim
15 words
The process according to claim 14, wherein the welding process includes a resistance welding step.
Claim 20
Dependent Claim
29 words
The process according to claim 14, further including a step of forming an insulating buffer layer (57, 58) between the leads and the main surface of the semiconductor chip.
Claim 21
Dependent Claim
60 words
The process according to claim 14, wherein the step of preparing the first frame body includes a step of preparing a first frame means made of a first metal having a predetermined melting point and then plating the first frame means at predetermined locations with a material having a predetermined melting point lower than that of the first frame means.
References Cited (Backward Citations)
No citation records indexed.
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