US5278101A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1992-06-26
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Granted: 1994-01-11
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Expires: 2012-06-26
Abstract
Abstract A semiconductor device includes a first frame having a bed, a semiconductor chip mounted on the bed and having a bonding pad, a second frame having an inner lead located above the semiconductor chip, a bonding wire connecting the bonding pad of the semiconductor chip to the tip end of the inner lead, and a shock-absorbing layer which is adhered at least to that surface portion of the tip end of the inner lead which faces the semiconductor chip.
Inventors
- 👤 Kazuhisa Ikenoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:56
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/458; H10W70/411; H10W70/415; H10W70/421; H10W70/442; H10W72/00; H10W72/50; H10W72/541; H10W72/5449; H10W72/851; H10W72/853; H10W72/865; H10W72/874; H10W72/884; H10W72/90; H10W72/931; H10W72/932; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
155 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a plate-like second frame material; applying a shock-absorbing film layer to a predetermined portion on one side of the second frame material; punching the second frame material, applied with the shock-absorbing film layer, into a predetermined shape, to thereby form a second frame having an inner lead and a shock-absorbing film layer applied at least to the tip end of the inner lead; preparing a first frame having a bed; mounting a semiconductor chip having a bonding pad on the bed; adjusting the position of the second frame such that the inner lead of the second frame is located above the semiconductor chip and such that the shock-absorbing film layer faces the surface of the semiconductor chip; and connecting the bonding pad of the semiconductor chip to the tip end of the inner lead located above the semiconductor chip by a bonding wire.
Claim 2
Independent Claim
155 words
A method for manufacturing a semiconductor device comprising the steps of: preparing a plate-like second frame material; applying a shock-absorbing film layer to a predetermined portion on one side of the second frame material; punching the second frame material, applied with the shock-absorbing film layer, into a predetermined shape, to thereby form a second frame having an inner lead and a shock-absorbing film layer applied at least to the tip end of the inner lead; preparing a first frame having a bed; mounting a semiconductor chip having a bonding pad on the bed; adjusting the position of the second frame such that the inner lead of the second frame is located above the semiconductor chip and such that the shock-absorbing film layer faces the surface of the semiconductor chip; and connecting the bonding pad of the semiconductor chip to the tip end of the inner lead located above the semiconductor chip by a bonding wire.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein said applying step includes a step of adhering the shock-absorbing film layer to the second frame material by printing.
Claim 4
Dependent Claim
29 words
A method according to claim 1, further comprising a step of resin-sealing the first frame, the semiconductor chip, the second frame, the bonding wire, and the shock-absorbing film layer.
Claim 5
Dependent Claim
30 words
A method according to claim 1, wherein said punching step includes a step of punching the second frame material from the side to which the shock-absorbing film layer is applied.
Claim 6
Dependent Claim
72 words
A method according to claim 1, wherein the step of punching the second frame material includes punching the second frame material to form a second frame having at least one inner lead with a shock-absorbing film layer applied at least to the tip end of the inner lead, each respective shock-absorbing film layer being separate from all other shock-absorbing film layers applied at least to the tip end of an inner lead.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-10 | 1997-07-12 | 1998-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-10 | 2001-07-12 | 2002-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-10 | 2005-07-12 | 2006-01-11 | $7700.00 | Window Closed / Lapsed |