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US5278097A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making doped silicon spheres

Assignee: Spheral Solar Power Inc
•
Filing: 1991-07-01
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Granted: 1994-01-11
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Expires: 2011-07-01
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Abstract

Abstract Solar cells are formed of semi-conductor spheres of P-type interior having an N-type skin are pressed between a pair of aluminum foil members forming the electrical contacts to the P-type and N-type regions. The aluminum foils, which comprise 1.0% silicon by weight, are flexible and electrically insulated from one another. The sphere are patterned in a foil matrix forming a cell Multiple cells can be interconnected to form a module of solar cell elements for converting sun light into electricity.

Inventors

  • 👤 Gregory B. Hotchkiss
  • 👤 Jackie C. Simmons

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 14:05
CPC Classifications
H; H10; H10F; H10F19/00; H10F71/00; H10F71/121; H10F71/137; H10F77/00; H10F77/10; H10F77/14; H10F77/147; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 102 words
A method for doping silicon spheres with an outer surface comprising the steps of: coating said outer surface of said spheres by immersing said silicon spheres in a solvent-based dopant and agitating said spheres during said coating of said outer surface of said silicon spheres, said agitation ensuring that the entire outer surface of each sphere is coated with said solvent-based dopant; heating said coated silicon spheres to form doped silicon oxide on said outer surface of said silicon spheres; diffusing said dopant into said silicon spheres; and processing said doped silicon spheres to remove excess doped-oxide from said doped silicon spheres.
Claim 2
Independent Claim 102 words
A method for doping silicon spheres with an outer surface comprising the steps of: coating said outer surface of said spheres by immersing said silicon spheres in a solvent-based dopant and agitating said spheres during said coating of said outer surface of said silicon spheres, said agitation ensuring that the entire outer surface of each sphere is coated with said solvent-based dopant; heating said coated silicon spheres to form doped silicon oxide on said outer surface of said silicon spheres; diffusing said dopant into said silicon spheres; and processing said doped silicon spheres to remove excess doped-oxide from said doped silicon spheres.
Claim 3
Dependent Claim 20 words
The method of claim 1 wherein said solvent-based dopant is selected from Group III of the Periodic Table of Elements.
Claim 4
Dependent Claim 20 words
The method of claim 1 wherein said solvent-based dopant is selected from Group V of the Periodic Table of Elements.
Claim 5
Dependent Claim 11 words
The method of claim 3 wherein said solvent-based dopant contains phosphorus.
Claim 6
Dependent Claim 21 words
The method of claim 1 further comprising the step of air drying said coated silicon spheres prior to the heating step.
Claim 7
Dependent Claim 25 words
The method of claim 5 wherein said coated silicon spheres are air dried for a time period in the range between 20 and 90 minutes.
Claim 8
Dependent Claim 24 words
The method of claim 1 wherein said coated silicon spheres are heated to a temperature in the range between 100° C. and 200° C.
Claim 9
Dependent Claim 24 words
The method of claim 7 wherein said coated silicon spheres are heated for a time period in the range of 15 to 60 minutes.
Claim 10
Dependent Claim 16 words
The method of claim 1 wherein said diffusing step is conducted in a quartz diffusion tube.
Claim 11
Dependent Claim 15 words
The method of claim 9 wherein said diffusing step is conducted in a controlled atmosphere.
Claim 12
Dependent Claim 13 words
The method of claim 10 wherein said controlled atmosphere consists essentially of nitrogen.
Claim 13
Dependent Claim 23 words
The method of claim 10 wherein said diffusing step is conducted at a temperature in the range between 850° C. and 1200° C.
Claim 14
Dependent Claim 21 words
The method of claim 1 further comprising repeating said coating, heating, diffusing and processing steps to obtain a predetermined junction depth.
Claim 15
Independent Claim 106 words
A method for producing doped silicon spheres comprising the steps of: providing silicon spheres with an outer surface; coating said outer surface of said spheres by immersing said silicon spheres in a solvent-based dopant and agitating said spheres during said coating of said outer surface of said silicon spheres, said agitation ensuring that the entire outer surface of each sphere is coated with said solvent-based dopant; heating said coated silicon spheres to form doped silicon oxide on said outer surface of said silicon spheres; diffusing said dopant into said silicon spheres; and processing said doped silicon spheres to remove excess doped-oxide from said doped silicon spheres.
Claim 16
Independent Claim 106 words
A method for producing doped silicon spheres comprising the steps of: providing silicon spheres with an outer surface; coating said outer surface of said spheres by immersing said silicon spheres in a solvent-based dopant and agitating said spheres during said coating of said outer surface of said silicon spheres, said agitation ensuring that the entire outer surface of each sphere is coated with said solvent-based dopant; heating said coated silicon spheres to form doped silicon oxide on said outer surface of said silicon spheres; diffusing said dopant into said silicon spheres; and processing said doped silicon spheres to remove excess doped-oxide from said doped silicon spheres.
Claim 17
Dependent Claim 20 words
The method of claim 14 wherein said solvent-based dopant is taken from Group V of the periodic table of elements.
Claim 18
Dependent Claim 20 words
The method of claim 14 wherein said solvent-based dopant is taken from Group III of the periodic table of elements.
Claim 19
Dependent Claim 21 words
The method of claim 14 further comprising the step of air drying said coated silicon spheres prior to the heating step.
Claim 20
Dependent Claim 22 words
The method of claim 17 wherein said coated silicon spheres are air dried for a time period of 20 to 90 minutes.
Claim 21
Dependent Claim 15 words
The method of claim 14 wherein said silicon spheres are provided in a single layer.
Claim 22
Dependent Claim 14 words
The method of claim 14 wherein said silicon spheres are provided in multiple layers.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-01-10 1997-07-12 1998-01-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-01-10 2001-07-12 2002-01-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-01-10 2005-07-12 2006-01-11 $7700.00 Window Closed / Lapsed

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