US4729962A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor junction formation by directed heat
Assignee: United States Department of Energy
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Filing: 1986-03-24
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Granted: 1988-03-08
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Expires: 2006-03-24
Abstract
Abstract The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100°-1150° C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.
Inventors
- 👤 Robert B. Campbell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:11
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/093
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
197 words
The method of forming semiconductor junctions in a dendritic silicon web of either P- or N-type, comprising: applying a single coating of a liquid precursor solvent containing a dopant of a type opposite that of the web to one face of said web; applying a single coating of a liquid precursor solvent containing a dopant of a type the same as that of the web to the opposite face of said web; then baking the web in an oven at approximately 200° C. for approximately 20 minutes to remove excessive solvent; then heating the web rapidly with a high intensity light for a period in the range of 15 seconds to attain temperatures in a range from about 950° C. to 1200° C. to simultaneously form junctions in both faces of said web; and then annealing said web in air following said rapid heating, at a temperature generally in the range of 750° C. to 850° C. for a period of 10 to 60 minutes to take out defects in the web frozen therein by the rapid cooling of the web when this high intensity light is shut off and thereby produce a highly efficient solar cell.
Claim 2
Independent Claim
197 words
The method of forming semiconductor junctions in a dendritic silicon web of either P- or N-type, comprising: applying a single coating of a liquid precursor solvent containing a dopant of a type opposite that of the web to one face of said web; applying a single coating of a liquid precursor solvent containing a dopant of a type the same as that of the web to the opposite face of said web; then baking the web in an oven at approximately 200° C. for approximately 20 minutes to remove excessive solvent; then heating the web rapidly with a high intensity light for a period in the range of 15 seconds to attain temperatures in a range from about 950° C. to 1200° C. to simultaneously form junctions in both faces of said web; and then annealing said web in air following said rapid heating, at a temperature generally in the range of 750° C. to 850° C. for a period of 10 to 60 minutes to take out defects in the web frozen therein by the rapid cooling of the web when this high intensity light is shut off and thereby produce a highly efficient solar cell.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-08 | 1991-09-07 | 1992-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-08 | 1995-09-07 | 1996-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-08 | 1999-09-07 | 2000-03-08 | $7700.00 | Window Closed / Lapsed |