US4482393A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of activating implanted ions by incoherent light beam
Assignee: Sony Corp
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Filing: 1980-12-15
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Granted: 1984-11-13
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Expires: 2000-12-15
Abstract
Abstract A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.
Inventors
- 👤 Kazuo Nishiyama
- 👤 Tetsunosuke Yanada
- 👤 Michio Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:07
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H05; H05B; H05B3/00; H05B3/0033; H05B3/0038; H05B3/0047; H10P30/202; H10P30/204; H10P30/206; H10P30/28; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P72/00; H10P72/04; H10P72/0431; H10P72/0436
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
73 words
A process of manufacturing a semiconductor device comprising the steps of (a) implanting impurity ions in a surface of a semimconductor substrate; and (b) radiating continuously with a plurality of incoherent lights emitted from a heated refractory metal and having a wave length of 0.4-4μm and with a beam width wider than said substrate, the intensity of said light beam such that the implanted region is annealed so as to be electrically activated.
Claim 2
Dependent Claim
73 words
A process of manufacturing a semiconductor device comprising the steps of (a) implanting impurity ions in a surface of a semimconductor substrate; and (b) radiating continuously with a plurality of incoherent lights emitted from a heated refractory metal and having a wave length of 0.4-4μm and with a beam width wider than said substrate, the intensity of said light beam such that the implanted region is annealed so as to be electrically activated.
Claim 3
Dependent Claim
29 words
A process of manufacturing a semiconductor device as claimed in claim 1, in which said substrate is suspended such that both of major surfaces are exposed to the radiation.
Claim 4
Dependent Claim
15 words
A process of manufacturing a semiconductor device as claimed in claim 1, in which said
Claim 5
Dependent Claim
19 words
A process of manufacturing according to claim 3 wherein said substrate is radiated for a period of 1-15 seconds.
Claim 6
Dependent Claim
13 words
A process according to claim 1 wherein said substrate is formed of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-11-13 | 1988-05-14 | 1988-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-11-13 | 1992-05-14 | 1992-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-11-13 | 1996-05-14 | 1996-11-13 | $7700.00 | Window Closed / Lapsed |