US5270263A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
Assignee: Micron Technology Inc
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Filing: 1991-12-20
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Granted: 1993-12-14
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Expires: 2011-12-20
Abstract
Abstract A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas. The process is especially adapted for forming an etchstop layer for use in forming contact vias through a dielectric layer in semiconductor manufacture. The process is also useful in semiconductor manufacture for forming an aluminum nitride (AlN) film that may be used as a passivation layer, as a ceramic packaging material, as a mask for ion implantation, as a substrate material in hybrid circuits, and as a high bandgap window for GaAs solar cells.
Inventors
- 👤 Sung C. Kim
- 👤 Chris C. Yu
- 👤 Trung T. Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0617; H10F; H10F71/00; H10F71/127; H10F71/1276; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P14/6921; H10P14/6922; H10P14/6923; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
124 words
In semiconductor manufacturing a sputtering process for forming an aluminum nitride etchstop layer comprising: depositing a layer of aluminum nitride (AlN) on a substrate by placing a target substrate of aluminum in a vacuum chamber and introducing an energized nitrogen gas plasma into the vacuum chamber while excluding other gases, with the nitrogen gas both a reactive gas and a sputter gas such that aluminum atoms are released from the target and deposited with nitrogen on a surface of the substrate; depositing a dielectric layer over the aluminum nitride (AlN) layer; photopatterning and etching the dielectric layer to form contact vias to the substrate using the aluminum nitride (AlN) layer as an etchstop; and removing the aluminum nitride (AlN) exposed in the contact vias.
Claim 2
Dependent Claim
124 words
In semiconductor manufacturing a sputtering process for forming an aluminum nitride etchstop layer comprising: depositing a layer of aluminum nitride (AlN) on a substrate by placing a target substrate of aluminum in a vacuum chamber and introducing an energized nitrogen gas plasma into the vacuum chamber while excluding other gases, with the nitrogen gas both a reactive gas and a sputter gas such that aluminum atoms are released from the target and deposited with nitrogen on a surface of the substrate; depositing a dielectric layer over the aluminum nitride (AlN) layer; photopatterning and etching the dielectric layer to form contact vias to the substrate using the aluminum nitride (AlN) layer as an etchstop; and removing the aluminum nitride (AlN) exposed in the contact vias.
Claim 3
Dependent Claim
18 words
The process as recited in claim 1 and wherein: etching the dielectric layer is with an ion etch.
Claim 4
Dependent Claim
20 words
The process as recited in claim 2 and wherein: CF 4 and CHF 3 are used during the ion etch.
Claim 5
Dependent Claim
24 words
The process as recited in claim 1 and wherein: the aluminum nitride (AlN) layer has a thickness range of 100 Å to 1000 Å.
Claim 6
Dependent Claim
35 words
The process as recited in claim 1 and wherein: the aluminum nitride is deposited with a sputter power or from 1.8 to 12.0 Kilowatts with an N 2 pressure of about 1 to 10 millitorr.
Claim 7
Dependent Claim
23 words
The process as recited in claim 5 and wherein: an N 2 gas glow rate during sputtering is about 100 cm 3 /minute.
Claim 8
Dependent Claim
13 words
The process as recited in claim 1 and wherein: the dielectric is (BPSG).
Claim 9
Dependent Claim
19 words
The process as recited in claim 1 and wherein: the dielectric is overetched for as long as 45 seconds.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-13 | 1997-06-14 | 1997-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-13 | 2001-06-14 | 2001-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-13 | 2005-06-14 | 2005-12-14 | $7700.00 | Window Closed / Lapsed |