US4030942A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor masking for device fabrication utilizing ion implantation and other methods
Assignee: International Business Machines Corp
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Filing: 1975-10-28
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Granted: 1977-06-21
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Expires: 1995-10-28
Abstract
Abstract The disclosure teaches the use of aluminum nitride as a mask for utilization of ion implantation in the formation of semiconductor configurations as well as an underlying material for use in semiconductor lift-off techniques in device formation and the deposition of metallization contact lines and interconnections.
Inventors
- 👤 William Andrew Keenan
- 👤 Charles Thomas Kroll
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/21; H10P30/212; H10P30/22; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/051; Y10S148/097; Y10S148/106; Y10S148/113
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
55 words
In a process of manufacturing semiconductor devices utilizing ion implantation to implant ions into a region of a semiconductor body, the improvement comprising the steps of: depositing aluminum nitride as an implantation screen on the surface of the implantation region; ion implanting said ions through said screen; and thereafter dissolving said aluminum nitride in water.
Claim 2
Dependent Claim
55 words
In a process of manufacturing semiconductor devices utilizing ion implantation to implant ions into a region of a semiconductor body, the improvement comprising the steps of: depositing aluminum nitride as an implantation screen on the surface of the implantation region; ion implanting said ions through said screen; and thereafter dissolving said aluminum nitride in water.
Claim 3
Dependent Claim
75 words
In a process of manufacturing semiconductor devices utilizing ion implantation to implant ions into a region of a semiconductor body the improvement comprising the steps: depositing a film of aluminum nitride over the region to be implanted, said region having surrounding layers of material at least one of which is a photo sensitive material; ion implanting said ions through said film; and removing, subsequent to implantation, said aluminum nitride film by dissolving same in water.
Claim 4
Dependent Claim
75 words
In a process of manufacturing semiconductor devices utilizing ion implantation to implant ions into a region of a semiconductor body the improvement comprising the steps: depositing a film of aluminum nitride over the region to be implanted, said region having surrounding layers of material at least one of which is a photo sensitive material; ion implanting said ions through said film; and removing, subsequent to implantation, said aluminum nitride film by dissolving same in water.
Claim 5
Dependent Claim
64 words
In a process of manufacturing semiconductor devices utilizing ion implantation to implant ions into a semiconductor, the improvement comprising the steps of: depositing a layer of aluminum nitride on said semiconductor; superimposing one or more other material layers thereon all of which are to be removed subsequent to implantation; ion implanting said ions; said removing said layers by dissolving said aluminum nitride in water.
Claim 6
Dependent Claim
64 words
In a process of manufacturing semiconductor devices utilizing ion implantation to implant ions into a semiconductor, the improvement comprising the steps of: depositing a layer of aluminum nitride on said semiconductor; superimposing one or more other material layers thereon all of which are to be removed subsequent to implantation; ion implanting said ions; said removing said layers by dissolving said aluminum nitride in water.
Claim 7
Dependent Claim
18 words
A process improvement in accordance with claim 1 wherein said water is between 10° C and 100° C.
Claim 8
Dependent Claim
18 words
A process improvement in accordance with claim 1 wherein said water is in the form of water vapor.
Claim 9
Dependent Claim
14 words
A process improvement in accordance with claim 1 wherein said semiconductor body is silicon.
Claim 10
Dependent Claim
21 words
A process improvement in accordance with claim 2 wherein said aluminum nitride screen is between 100 to 200 Angstroms in thickness.
Claim 11
Dependent Claim
18 words
A process improvement in accordance with claim 2 wherein said water is in the form of a vapor.
Claim 12
Dependent Claim
14 words
A process improvement in accordance with claim 2 wherein said semiconductor body is silicon.
Claim 13
Dependent Claim
17 words
A process improvement in accordance with claim 3 wherein said aluminum nitride is used as a mask.
Claim 14
Dependent Claim
14 words
A process improvement in accordance with claim 3 wherein said semiconductor body is silicon.
Claim 15
Dependent Claim
17 words
A process improvement in accordance with claim 3 wherein one or more superimposed layers are photosensitive material.
Claim 16
Dependent Claim
14 words
A process improvement in accordance with claim 3 wherein said water is a vapor.
Claim 17
Dependent Claim
18 words
A process improvement in accordance with claim 1 wherein at least one superimposed layer is a photosensitive material.
Claim 18
Dependent Claim
18 words
A process improvement in accordance with claim 2 wherein said water is in the form of a liquid.
Claim 19
Dependent Claim
14 words
A process improvement in accordance with claim 3 wherein said water is a liquid.
References Cited (Backward Citations)
US3600218A
Cited
US3756861A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-20 | 1980-12-20 | 1981-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-20 | 1984-12-20 | 1985-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-20 | 1988-12-20 | 1989-06-21 | $7700.00 | Window Closed / Lapsed |