US4761345A
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Aluminum nitride substrate
Assignee: Toshiba Corp
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Filing: 1987-02-20
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Granted: 1988-08-02
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Expires: 2007-02-20
Abstract
Abstract There is disclosed an aluminum nitride substrate which comprises a substrate composed of an aluminum nitride sintered product; an electroconductive metallized layer composed of titanium nitride and at least one selected from the group consisting of molybdenum, tungsten, tantalum, an element in group III of the periodic table, an element in group IVa of the same, a rare earth element, an actinide element and a compound containing these elements; and an electroconductive protective layer laminated in this order on the aluminum nitride sintered product.
Inventors
- 👤 Hideki Sato
- 👤 Nobuyuki Mizunoya
- 👤 Mitsuhiro Nagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:16
CPC Classifications
C; C23; C23C; C23C30/00; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/52; C04B41/80; C04B41/81; C04B41/89; C23C18/00; C23C18/54; C23C28/00; C04B2111/00; C04B2111/90; C04B2111/94; H; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H05K1/092; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10T; Y10T428/00; Y10T428/12; Y10T428/12014; Y10T428/12028; Y10T428/12049; Y10T428/12056; Y10T428/12063; Y10T428/12069; Y10T428/12076; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12576
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
75 words
An aluminum nitride substrate comprising: a substrate composed of an aluminum nitride sintered product; an electroconductive metallized layer laminated on said substrate composed of titanium nitride and at least one member selected from the group consisting of molybdenum, tungsten, tantalum, scandium, yttrium, boron, aluminum, gallium, indium, thallium, titanium, zirconium, and hafnium, the rare earth elements, the actinide elements and compounds containing any of these elements; and an electroconductive protective layer laminated on said metallized layer.
Claim 2
Dependent Claim
75 words
An aluminum nitride substrate comprising: a substrate composed of an aluminum nitride sintered product; an electroconductive metallized layer laminated on said substrate composed of titanium nitride and at least one member selected from the group consisting of molybdenum, tungsten, tantalum, scandium, yttrium, boron, aluminum, gallium, indium, thallium, titanium, zirconium, and hafnium, the rare earth elements, the actinide elements and compounds containing any of these elements; and an electroconductive protective layer laminated on said metallized layer.
Claim 3
Dependent Claim
12 words
A semiconductor substrate comprising the aluminum nitride substrate according to claim 1.
Claim 4
Dependent Claim
16 words
A semiconductor substrate according to claim 2, additionally comprising a metal member bonded to said substrate.
Claim 5
Dependent Claim
20 words
A semiconductor substrate according to claim 3, wherein said metal member is bonded to said substrate by soldering or brazing.
Claim 6
Dependent Claim
43 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive metallized layer is a layer containing titanium nitride; and at least one member selected from the group consisting of molybdenum, tungsten, tantalum, zirconium, hafnium and yttrium, and compounds composed of these elements.
Claim 7
Dependent Claim
25 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive metallized layer is a layer containing 5 to 95% by weight of titanium nitride.
Claim 8
Dependent Claim
22 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive metallized layer has a layer thickness of 1 to 50 μm.
Claim 9
Dependent Claim
25 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive protective layer is prepared by the electroless plating method or the electrolytic plating method.
Claim 10
Dependent Claim
18 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive protective layer is a nickel plated layer.
Claim 11
Dependent Claim
22 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive protective layer has a layer thickness of 1 to 10 μm.
Claim 12
Dependent Claim
48 words
An aluminum nitride substrate according to claim 1, wherein the compounds containing the elements are selected from the group consisting of nitrates, nitrites, sulfates, sulfites, borates, carbonates, silicates, phosphates, phosphites, chlorides, fluorides, chlorates, ammonium salts, oxalates, hydroxides, hydrides, iodides, bromides, alkoxides, silicides, carbides, borides, nitrides, oxides and sol-gel.
Claim 13
Dependent Claim
24 words
An aluminum nitride substrate according to claim 1, wherein the compounds containing the elements are selected from the group consisting of nitrides and oxides.
Claim 14
Dependent Claim
25 words
An aluminum nitride substrate according to claim 1, wherein the electroconductive metallized layer is a layer containing 15 to 65% by weight of titanium nitride.
Claim 15
Dependent Claim
20 words
An aluminum nitride substrate according to claim 1, consisting essentially of the substrate, the metallized layer and the protective layer.
References Cited (Backward Citations)
US4585706A
Cited
US4517584A
Cited
US4570328A
Cited
US4659611A
Cited
US4610933A
Cited
US4656101A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-02 | 1992-02-01 | 1992-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-02 | 1996-02-01 | 1996-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-02 | 2000-02-01 | 2000-08-02 | $7700.00 | Window Closed / Lapsed |