Method for manufacturing field effect transistor having LDD structure

Claim 1

A method for manufacturing a CMOS transistor, comprising: a process of providing an oxide film for device isolation in predetermined regions on the surface of a semiconductor substrate having a region of one conductivity type and a region of the opposite conductivity type and forming a gate insulating film on the surface of said region of the one conductivity type and on the surface of said region of the opposite conductivity type; a process of providing a first gate electrode on said region of the one conductivity type via said gate insulating film and providing a second gate electrode on said region of the opposite conductivity type via said gate insulating film; a process of forming a first photoresist film which covers said region of the opposite conductivity type and has a first opening at least exposing said gate insulating film on the surface of said region of the one conductivity type; a process of forming a low concentration diffused layer of the opposite conductivity type in said region of the one conductivity type by an ion implantation which uses said first gate electrode and said first photoresist film as a mask; a process of selectively growing a first liquid phase deposited silicon dioxide film in said first opening by a liquid phase deposition method which uses said first photoresist film as a mask; a process of forming a first silicon dioxide film for spacer on the side walls of said first gate electrode by applying a reactive ion etching to said first liquid phase deposited silicon dioxide film; a process of forming a high concentration diffused layer of the opposite conductivity type in said region of the one conductivity type by an ion implantation which uses said first gate electrode and said first silicon dioxide film for spacer and said first photoresist film as a mask; a process of forming, after removing said first photoresist film, a second photoresist film which covers said region of one conductivity type and has a second opening at least exposing said gate insulating film on the surface of said region of the opposite conductivity type; a process of forming a low concentration diffused layer of the one conductivity type in said region of the opposite conductivity type by an ion implantation which uses said second gate electrode and said second photoresist film as a mask; a process of selectively growing a second liquid phase deposited silicon dioxide film in said second opening by a liquid phase deposition method which uses said second photoresist film as a mask; a process of forming a second silicon dioxide film for spacer on the side walls of said second gate electrode by applying a reactive ion etching to said second liquid phase deposited silicon dioxide film; and a process of forming a high concentration diffused layer of the one conductivity type in said region of the opposite conductivity type by an ion implantation which uses said second gate electrode and said second silicon dioxide film for spacer and said second photoresist film as a mask.

Claim 2

A method for manufacturing a CMOS transistor, comprising: a process of providing an oxide film for device isolation in predetermined regions on the surface of a semiconductor substrate having a region of one conductivity type and a region of the opposite conductivity type and forming a gate insulating film on the surface of said region of the one conductivity type and on the surface of said region of the opposite conductivity type; a process of providing a first gate electrode on said region of the one conductivity type via said gate insulating film and providing a second gate electrode on said region of the opposite conductivity type via said gate insulating film; a process of forming a first photoresist film which covers said region of the opposite conductivity type and has a first opening at least exposing said gate insulating film on the surface of said region of the one conductivity type; a process of forming a low concentration diffused layer of the opposite conductivity type in said region of the one conductivity type by an ion implantation which uses said first gate electrode and said first photoresist film as a mask; a process of selectively growing a first liquid phase deposited silicon dioxide film in said first opening by a liquid phase deposition method which uses said first photoresist film as a mask; a process of forming a first silicon dioxide film for spacer on the side walls of said first gate electrode by applying a reactive ion etching to said first liquid phase deposited silicon dioxide film; a process of forming a high concentration diffused layer of the opposite conductivity type in said region of the one conductivity type by an ion implantation which uses said first gate electrode and said first silicon dioxide film for spacer and said first photoresist film as a mask; a process of forming, after removing said first photoresist film, a second photoresist film which covers said region of one conductivity type and has a second opening at least exposing said gate insulating film on the surface of said region of the opposite conductivity type; a process of forming a low concentration diffused layer of the one conductivity type in said region of the opposite conductivity type by an ion implantation which uses said second gate electrode and said second photoresist film as a mask; a process of selectively growing a second liquid phase deposited silicon dioxide film in said second opening by a liquid phase deposition method which uses said second photoresist film as a mask; a process of forming a second silicon dioxide film for spacer on the side walls of said second gate electrode by applying a reactive ion etching to said second liquid phase deposited silicon dioxide film; and a process of forming a high concentration diffused layer of the one conductivity type in said region of the opposite conductivity type by an ion implantation which uses said second gate electrode and said second silicon dioxide film for spacer and said second photoresist film as a mask.