Patent US5268918A successfully refreshed from Google Patents.
US5268918A
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Semiconductor laser
Assignee: Sony Corp
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Filing: 1992-02-21
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Granted: 1993-12-07
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Expires: 2012-02-21
Abstract
Abstract A double heterojunction II-VI group compound semiconductor laser has a substrate of GaAs or Gap, a first cladding layer, an active layer, and a second cladding layer which are successively deposited on the substrate by way of epitaxial growth. One or both of the first and second cladding layers have a composition of ZnMgSSe.
Inventors
- 👤 Katsuhiro Akimoto
- 👤 Hiroyuki Okuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:01
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H01S5/04; H01S5/041; H01S5/3211; H01S5/3213
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
104 words
A semiconductor laser comprising: a substrate of GaAs; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the substrate and an electrode on the second cladding layer; one of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of:
Claim 2
Dependent Claim
104 words
A semiconductor laser comprising: a substrate of GaAs; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the substrate and an electrode on the second cladding layer; one of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of:
Claim 3
Dependent Claim
3 words
3≦x≦0.9, and 0.06≦y≦0.9.
Claim 4
Dependent Claim
3 words
3≦x≦0.9, and 0.06≦y≦0.9.
Claim 5
Dependent Claim
107 words
A semiconductor laser comprising: a substrate of GaAs; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the substrate and an electrode on the second cladding layer; both of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of: 0.3≦x≦0.9, and 0.06≦y≦0.9.
Claim 6
Dependent Claim
107 words
A semiconductor laser comprising: a substrate of GaAs; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the substrate and an electrode on the second cladding layer; both of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of: 0.3≦x≦0.9, and 0.06≦y≦0.9.
Claim 7
Dependent Claim
94 words
A semiconductor laser comprising: a substrate of GaAs; a first n-type cladding layer deposited on said substrate by way of epitaxial growth; an active layer deposited on said first n-type cladding layer by way of epitaxial growth; a second p-type cladding layer deposited on said active layer by way of epitaxial growth; an electrode on the substrate and an electrode on the second p-type cladding layers; said first n-type cladding layer having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of:
Claim 8
Dependent Claim
94 words
A semiconductor laser comprising: a substrate of GaAs; a first n-type cladding layer deposited on said substrate by way of epitaxial growth; an active layer deposited on said first n-type cladding layer by way of epitaxial growth; a second p-type cladding layer deposited on said active layer by way of epitaxial growth; an electrode on the substrate and an electrode on the second p-type cladding layers; said first n-type cladding layer having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of:
Claim 9
Dependent Claim
15 words
3≦x≦0.9, and 0.06≦y≦0.9; said second p-type cladding layer being made of a semiconductor of BeZnSTe.
Claim 10
Dependent Claim
15 words
3≦x≦0.9, and 0.06≦y≦0.9; said second p-type cladding layer being made of a semiconductor of BeZnSTe.
Claim 11
Dependent Claim
39 words
A semiconductor layer according to claim 3, wherein said second p-type cladding layer has a composition of Be a Zn 1-a S b Te 1-b with atomic ratios a, b being selected in the ranges of: 0.1≦a≦0.7, and 0.5≦b≦0.9.
Claim 12
Dependent Claim
104 words
A semiconductor laser comprising: a substrate of GaP; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the second cladding layer and an electrode on the substrate; one of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of:
Claim 13
Dependent Claim
104 words
A semiconductor laser comprising: a substrate of GaP; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the second cladding layer and an electrode on the substrate; one of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of:
Claim 14
Dependent Claim
3 words
5≦x≦0.9, and 0.4≦y≦0.9.
Claim 15
Dependent Claim
3 words
5≦x≦0.9, and 0.4≦y≦0.9.
Claim 16
Dependent Claim
107 words
A semiconductor laser comprising: a substrate of GaP; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the second cladding layer and an electrode on the substrate; both of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of: 0.5≦x≦0.9, and 0.4≦y≦0.9.
Claim 17
Dependent Claim
107 words
A semiconductor laser comprising: a substrate of GaP; a first cladding layer of a first conductivity type deposited on said substrate by way of epitaxial growth; an active layer deposited on said first cladding layer by way of epitaxial growth; a second cladding layer of a second conductivity type deposited on said active layer by way of epitaxial growth; and an electrode on the second cladding layer and an electrode on the substrate; both of said first and second cladding layers having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of: 0.5≦x≦0.9, and 0.4≦y≦0.9.
Claim 18
Dependent Claim
110 words
A semiconductor laser comprising: a substrate of GaP; a first n-type cladding layer deposited on said substrate by way of epitaxial growth; an active layer deposited on said first n-type cladding layer by way of epitaxial growth; a second p-type cladding layer deposited on said active layer by way of epitaxial growth; and an electrode on the substrate and an electrode on the second p-type cladding layer; said first n-type cladding layer having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of: 0.5≦x≦0.9, and 0.4≦y≦0.9; said second p-type cladding layer being made of a semiconductor of BeZnSTe.
Claim 19
Dependent Claim
110 words
A semiconductor laser comprising: a substrate of GaP; a first n-type cladding layer deposited on said substrate by way of epitaxial growth; an active layer deposited on said first n-type cladding layer by way of epitaxial growth; a second p-type cladding layer deposited on said active layer by way of epitaxial growth; and an electrode on the substrate and an electrode on the second p-type cladding layer; said first n-type cladding layer having a composition of Zn x Mg 1-x S y Se 1-y with atomic ratios x, y being selected in the ranges of: 0.5≦x≦0.9, and 0.4≦y≦0.9; said second p-type cladding layer being made of a semiconductor of BeZnSTe.
Claim 20
Dependent Claim
39 words
A semiconductor layer according to claim 7, wherein said second p-type cladding layer has a composition of Be a Zn 1-a S b Te 1-b with atomic ratios a, b being selected in the ranges of: 0.1≦a≦0.8, and 0.2≦b≦0.9.
References Cited (Backward Citations)
JPS63288088A
Cited
JPS6469985A
Cited
JPH0286A
Cited
JPH02196485A
Cited
US5008891A
Cited
US5010376A
Cited
US5045897A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-06 | 1997-06-07 | 1997-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-06 | 2001-06-07 | 2001-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-06 | 2005-06-07 | 2005-12-07 | $7700.00 | Window Closed / Lapsed |