Patent US5268065A successfully refreshed from Google Patents.
US5268065A
Expired / Lapsed
US
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Method for thinning a semiconductor wafer
Assignee: Apple Inc
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Filing: 1992-12-21
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Granted: 1993-12-07
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Expires: 2012-12-21
Abstract
Abstract A method for thinning a semiconductor wafer (11) is provided. An support film (15) is mounted to the semiconductor wafer (11). The support film (15) provides support for a semiconductor wafer during thinning as well as protection for a front-side (12) of the semiconductor wafer (11). After mounting the support film (15) to the semiconductor wafer (11), a back-side (13) of the semiconductor wafer is etched in a two step process. First the back-side (13) undergoes a mechanical grinding followed by a chemical etch. A metal film (18) may be sputtered on the back-side (13). The semiconductor wafer (11) having the support film (15) is placed in a tape frame (20) for dicing operations and the support film (15) is removed from the front-side (12) of the semiconductor wafer (11).
Inventors
- 👤 Melissa E. Grupen-Shemansky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:51
CPC Classifications
H; H10; H10P; H10P54/00; H10P72/00; H10P72/70; H10P72/74; H10P72/7402; H10P72/7416; H10P72/7422; H10P72/744; H10P72/7442; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
141 words
A method for thinning a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a first major surface and a second major surface; providing a support film capable of withstanding a temperature up to approximately 200 degrees Celsius, and having a first major surface and a second major surface, wherein the first major surface has an adhesive strength less than approximately 20 gram per 25 millimeters of support film width at a 90 degree pulling angle; bonding the first major surface of the support film with the first major surface of the semiconductor wafer; removing a desired thickness from the semiconductor wafer wherein the desired thickness is removed from a side of the semiconductor wafer having the second major surface; and separating the first major surface of the support film from the first major surface of the semiconductor wafer.
Claim 2
Independent Claim
141 words
A method for thinning a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a first major surface and a second major surface; providing a support film capable of withstanding a temperature up to approximately 200 degrees Celsius, and having a first major surface and a second major surface, wherein the first major surface has an adhesive strength less than approximately 20 gram per 25 millimeters of support film width at a 90 degree pulling angle; bonding the first major surface of the support film with the first major surface of the semiconductor wafer; removing a desired thickness from the semiconductor wafer wherein the desired thickness is removed from a side of the semiconductor wafer having the second major surface; and separating the first major surface of the support film from the first major surface of the semiconductor wafer.
Claim 3
Dependent Claim
35 words
A method for thinning a semiconductor wafer as claimed in claim 1 wherein the step of removing a desired thickness from the semiconductor wafer includes mechanically grinding the second major surface of the semiconductor wafer.
Claim 4
Dependent Claim
35 words
A method for thinning a semiconductor wafer as claimed in claim 1 wherein the step of removing a desired thickness from the semiconductor wafer includes chemically etching the second major surface of the semiconductor wafer.
Claim 5
Dependent Claim
58 words
A method for thinning a semiconductor wafer as claimed in claim 1 wherein the step of removing a desired thickness from the semiconductor wafer further includes the steps of: mechanically grinding a desired thickness of the second major surface of the semiconductor wafer; and chemically etching the second major surface of the semiconductor wafer to a desired thickness.
Claim 6
Dependent Claim
31 words
A method for thinning a semiconductor wafer as claimed in claim 4 wherein a step of chemically etching includes applying a chemical etchant to a single side of the semiconductor wafer.
Claim 7
Dependent Claim
24 words
A method for thinning a semiconductor wafer as claimed in claim 4 wherein a step of chemically etching includes etching in an etch bath.
Claim 8
Dependent Claim
43 words
A method for thinning a semiconductor wafer as claimed in claim 1 wherein the step of bonding the first major surface of the support film with the first major surface of the semiconductor wafer includes rolling the support film onto the semiconductor wafer.
Claim 9
Dependent Claim
58 words
A method for thinning a semiconductor wafer as claimed in claim 1 wherein the step of separating the first major surface of the support film from the first major surface of the semiconductor wafer includes mounting the semiconductor wafer on a tape frame followed by peeling the support film from the first major surface of the semiconductor wafer.
Claim 10
Dependent Claim
34 words
A method for thinning a semiconductor wafer as claimed in claim 1 wherein the step of removing a desired thickness from the semiconductor wafer includes sputtering a metal film on the second major surface.
Claim 11
Independent Claim
93 words
A method for thinning a substrate, comprising the steps of: providing a substrate, the substrate having a first major surface and a second major surface; providing a handle having an adhesive strength less than approximately 20 grams per 25 millimeters of handle width at a 90 degree pulling angle; covering the first major surface with the handle; removing a desired thickness from the substrate wherein the desired thickness is removed from a side of the substrate having the second major surface; and removing the handle from the first major surface of the substrate.
Claim 12
Independent Claim
93 words
A method for thinning a substrate, comprising the steps of: providing a substrate, the substrate having a first major surface and a second major surface; providing a handle having an adhesive strength less than approximately 20 grams per 25 millimeters of handle width at a 90 degree pulling angle; covering the first major surface with the handle; removing a desired thickness from the substrate wherein the desired thickness is removed from a side of the substrate having the second major surface; and removing the handle from the first major surface of the substrate.
Claim 13
Dependent Claim
33 words
A method for thinning a substrate as claimed in claim 10 wherein the step of providing a film includes providing a film capable of withstanding temperatures ranging up to, approximately, 200 degrees Celsius.
Claim 14
Dependent Claim
53 words
A method for thinning a substrate as claimed in claim 10 wherein the step of removing a desired thickness from the substrate includes the steps of: mechanically grinding a desired thickness of the second major surface of the substrate; and chemically etching a desired thickness of the second major surface of the substrate.
Claim 15
Dependent Claim
65 words
A method for thinning a substrate as claimed in claim 12 wherein the step of chemically etching the desired thickness includes the steps of: etching the substrate with a first solution, the first solution comprising sulfuric acid, hydrogen peroxide, and water; cleaning the substrate with a second solution, the second solution comprising ammonium hydroxide, and water; rinsing the substrate with water; and drying the substrate.
Claim 16
Dependent Claim
49 words
A method for thinning a substrate as claimed in claim 10 wherein the step of removing the handle from the first major surface of the substrate includes the steps of: mounting the substrate on a tape frame; and peeling the handle from the first major surface of the substrate.
Claim 17
Independent Claim
74 words
A method for increasing a thermal dissipation capability of a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a first major surface and a second major surface; attaching a support film to the first major surface of the semiconductor wafer; thinning the semiconductor wafer; providing a metallic film on the second major surface of the semiconductor wafer; and peeling the support film from the first major surface of the semiconductor wafer.
Claim 18
Independent Claim
74 words
A method for increasing a thermal dissipation capability of a semiconductor wafer, comprising the steps of: providing a semiconductor wafer having a first major surface and a second major surface; attaching a support film to the first major surface of the semiconductor wafer; thinning the semiconductor wafer; providing a metallic film on the second major surface of the semiconductor wafer; and peeling the support film from the first major surface of the semiconductor wafer.
Claim 19
Dependent Claim
53 words
A method for increasing a thermal dissipation capability of a semiconductor wafer as claimed in claim 15 wherein the step of attaching a support film to the first major surface of the semiconductor wafer includes providing a support film, the support film capable of withstanding temperatures ranging up to, approximately, 200 degrees Celsius.
Claim 20
Dependent Claim
53 words
A method for increasing a thermal dissipation capability of a semiconductor wafer as claimed in claim 15 wherein the step of thinning the semiconductor wafer includes the steps of: grinding the second major surface of the semiconductor wafer to a desired thickness; and chemically etching a desired thickness of the second major surface.
Claim 21
Dependent Claim
40 words
A method for increasing a thermal dissipation capability of a semiconductor wafer as claimed in claim 15 wherein the step of peeling the support film includes mounting the support film in a tape frame followed by peeling the support film.
Claim 22
Dependent Claim
101 words
A method for increasing a thermal dissipation capability of a semiconductor wafer as claimed in claim 15 wherein the step of attaching a support film to the first major surface of the semiconductor wafer includes the steps of: placing a portion of the first major surface of the support film on a peripheral portion of the first major surface of the semiconductor wafer; and rolling the support film from one edge at the peripheral portion to an opposite edge of the first major surface of the semiconductor wafer, wherein the step of rolling bonds the support film to the semiconductor wafer.
Claim 23
Dependent Claim
31 words
A method for increasing a thermal dissipation capability of a semiconductor wafer as claimed in claim 15 wherein the step of providing a metallic film includes sputter depositing the metallic film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-06 | 1997-06-07 | 1997-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-06 | 2001-06-07 | 2001-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-06 | 2005-06-07 | 2005-12-07 | $7700.00 | Window Closed / Lapsed |