Patent US5266519A successfully refreshed from Google Patents.
US5266519A
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Method for forming a metal conductor in semiconductor device
Assignee: NEC Corp
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Filing: 1992-11-12
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Granted: 1993-11-30
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Expires: 2012-11-12
Abstract
Abstract An oxidizable metal film and a barrier metal film are formed in the named order on an insulating film formed on a semiconductor substrate or in a contact hole formed through the insulating film. A gold film is selectively formed on the barrier metal film in alignment with the contact hole. The barrier metal is selectively removed using the gold film as a mask, and an exposed surface of the oxidizable metal film is oxidized. A second metal film is deposited on only a surface of the gold film by an electroplating using the oxidized surface of the oxidizable metal film as an anti-plating mask. Finally, the oxidizable metal film not covered by the gold film is completely oxidized.
Inventors
- 👤 Yasuhiko Iwamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/063; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
112 words
A method for forming a metal conductor in a semiconductor device, comprising the steps of forming a first metal film including at least one oxidizable metal layer, on a layer formed at a semiconductor substrate, forming a metal conductor on a predetermined region of said first metal film, selectively removing said first metal film not covered by said metal conductor so that said oxidizable metal layer is exposed in an area not covered by said metal conductor, oxidizing an exposed surface of said oxidizable metal layer, forming a second metal film on only a surface of said metal conductor, and completely oxidizing said oxidizable metal layer not covered by said metal conductor.
Claim 2
Independent Claim
112 words
A method for forming a metal conductor in a semiconductor device, comprising the steps of forming a first metal film including at least one oxidizable metal layer, on a layer formed at a semiconductor substrate, forming a metal conductor on a predetermined region of said first metal film, selectively removing said first metal film not covered by said metal conductor so that said oxidizable metal layer is exposed in an area not covered by said metal conductor, oxidizing an exposed surface of said oxidizable metal layer, forming a second metal film on only a surface of said metal conductor, and completely oxidizing said oxidizable metal layer not covered by said metal conductor.
Claim 3
Dependent Claim
52 words
A method claimed in claim 1 wherein said metal conductor is formed by an electroplating or an electroless plating and said second metal film is formed by an electroplating using said metal conductor as a voltage supplying layer and using the oxidized surface of said oxidizable metal layer as an anti-plating mask.
Claim 4
Dependent Claim
78 words
A method claimed in claim 1 or 2 wherein said metal conductor is formed of Au, and said first metal film is formed in a double-layer structure composed of a first metal layer formed of a material selected from the group consisting of Ti, TiW and Cr and a second layer formed of a material selected from the group consisting of Cu, Pt, Pd, Ni and Au, said first metal layer being formed on said second metal layer.
Claim 5
Dependent Claim
19 words
A method claimed in claim 3 wherein said second metal film is formed of Ni, Au, Co and Pd.
Claim 6
Dependent Claim
107 words
A method claimed in claim 3 wherein formation of said metal conductor is performed by depositing a patterned photoresist layer having an opening at a position where said metal conductor is to be formed, selectively depositing a metal layer on said first metal film by an electroplating using said patterned photoresist layer as a mask and using said first metal film as a voltage supplying layer so that said metal layer on said first metal film not covered by said patterned photoresist layer constitutes said metal conductor, and removing said patterned photoresist layer so that said first metal film not covered by said metal conductor is exposed.
Claim 7
Dependent Claim
100 words
A method claimed in claim 3 wherein formation of said metal conductor is performed by depositing first and second metal layers on said first metal film in the named order, patterning said second metal layer so that said second metal layer remains only at a position where said metal conductor is to be formed, selectively removing said first metal layer using said patterned second metal layer as a mask, so that a patterned first metal layer constitutes said metal conductor and said first metal film not covered by said metal conductor is exposed, and removing said patterned second metal layer.
Claim 8
Dependent Claim
21 words
A method claimed in claim 1 or 2 wherein said second metal film is formed of Ni, Au, Co and Pd.
Claim 9
Dependent Claim
107 words
A method claimed in claim 7 wherein formation of said metal conductor is performed by depositing a patterned photoresist layer having an opening at a position where said metal conductor is to be formed, selectively depositing a metal layer on said first metal film by an electroplating using said patterned photoresist layer as a mask and using said first metal film as a voltage supplying layer so that said metal layer on said first metal film not covered by said patterned photoresist layer constitutes said metal conductor, and removing said patterned photoresist layer so that said first metal film not covered by said metal conductor is exposed.
Claim 10
Dependent Claim
100 words
A method claimed in claim 7 wherein formation of said metal conductor is performed by depositing first and second metal layers on said first metal film in the named order, patterning said second metal layer so that said second metal layer remains only at a position where said metal conductor is to be formed, selectively removing said first metal layer using said patterned second metal layer as a mask, so that a patterned first metal layer constitutes said metal conductor and said first metal film not covered by said metal conductor is exposed, and removing said patterned second metal layer.
Claim 11
Dependent Claim
111 words
A method claimed in any of claim 1 or 2 wherein formation of said metal conductor is performed by depositing a patterned photoresist layer having an opening at a position where said metal conductor is to be formed, selectively depositing a metal layer on said first metal film by an electroplating using said patterned photoresist layer as a mask and using said first metal film as a voltage supplying layer so that said metal layer on said first metal film not covered by said patterned photoresist layer constitutes said metal conductor, and removing said patterned photoresist layer so that said first metal film not covered by said metal conductor is exposed.
Claim 12
Dependent Claim
104 words
A method claimed in any of claim 1 or 2 wherein formation of said metal conductor is performed by depositing first and second metal layers on said first metal film in the named order, patterning said second metal layer so that said second metal layer remains only at a position where said metal conductor is to be formed, selectively removing said first metal layer using said patterned second metal layer as a mask, so that a patterned first metal layer constitutes said metal conductor and said first metal film not covered by said metal conductor is exposed, and removing said patterned second metal layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-29 | 2005-05-31 | 2005-11-30 | $7700.00 | Window Closed / Lapsed |