Semiconductor device with bump

Abstract

Abstract PURPOSE:To include a protection film and to surely protect an internal wiring by coating all the parts except a bump section with positive oxide films. CONSTITUTION:An Al wiring 14a on an Si substrate 12 is covered with a protection film 16 and a window is opened. Ta 20 and Cu 22 are stacked on the protection film 16 and an Au bump 26 is formed by Au plating after applying resist masks 24 to the Cu 22. Next, the resists 24 are removed and after removing the Cu 22 by etching, positive formation is made to the exposed surface of the Ta 20 by using an aqueous solution of oxidalic acid and oxide films 20a are made. In this composition, a high reliability semiconductor device with a bump will be obtained.

Inventors

• 👤 Katsuya Okumura

Bibliographic Details