Dynamic memory cell and dynamic memory

Claim 2

A dynamic memory cell comprising: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to a transfer gate control line; a second MOS transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and source and drain regions one of which is connected to a first control terminal; a third MOS transistor for supplying a refresh current, and having source and drain regions one of which is connected to a second control terminal and the other of which is connected to said first storage node; delay means connected between the gate of said third MOS transistor and a second storage node on the other side of the drain and source regions of said second MOS transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and means for controlling a refreshing operation of the cell by respectively supplying first and second control signals to said first and second control terminals.

Claim 3

A dynamic memory cell according to claim 1, wherein a capacitance of said second storage node and a predetermined value of said delay means determine the refresh current supplying cycle.

Claim 4

A dynamic memory cell according to claim 1, wherein said delay means is a resistor element.

Claim 5

A dynamic memory cell according to claim 1, wherein said delay means is a switching element.

Claim 6

A dynamic memory cell according to claim 4, wherein said switching element is constituted by a fourth MOS transistor.

Claim 7

A dynamic memory cell comprising: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to a transfer gate control line; a first thin film transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and a conductive film forming source and drain regions thereof and connected at one end to a first control terminal; a second thin film transistor for supplying a refresh current, and having source and drain terminals one of which is connected to a second control terminal and the other of which is connected to said first storage node and a gate formed of the same conductive film as that constituting the drain and source regions of said first thin film transistor; delay means formed of the same conductive film as that of said first thin film transistor and connected between the gate of said second thin film transistor and a second storage node on the other side of the drain and source regions of said first thin film transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and means for controlling a refreshing operation of the cell by respectively supplying first and second control signals to said first and second control terminals.

Claim 8

A dynamic memory cell comprising: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to a transfer gate control line; a first thin film transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and a conductive film forming source and drain regions thereof and connected at one end to a first control terminal; a second thin film transistor for supplying a refresh current, and having source and drain terminals one of which is connected to a second control terminal and the other of which is connected to said first storage node and a gate formed of the same conductive film as that constituting the drain and source regions of said first thin film transistor; delay means formed of the same conductive film as that of said first thin film transistor and connected between the gate of said second thin film transistor and a second storage node on the other side of the drain and source regions of said first thin film transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and means for controlling a refreshing operation of the cell by respectively supplying first and second control signals to said first and second control terminals.

Claim 9

A dynamic memory cell according to claim 6, wherein a capacitance of said second storage node an a predetermined value of said delay means determine the refresh current supplying cycle.

Claim 10

A dynamic memory cell according to claim 6, wherein said delay means is a resistor element.

Claim 11

A dynamic memory cell according to claim 6, wherein said second and third transistors are formed over an area of said MOS transistor.

Claim 12

A dynamic memory comprising: a read/write node for communicating read/write data; a transfer gate control line for controlling transfer of data; a memory cell array formed of a plurality of dynamic memory cells arranged in a matrix form, each of said plurality of dynamic memory cells including: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to a transfer gate control line; a second MOS transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and source and drain regions one of which is connected to a first control terminal; a third MOS transistor for supplying a refresh current, and having source and drain regions one of which is connected to a second control terminal and the other of which is connected to said first storage node; and delay means connected between the gate of said third MOS transistor and a second storage node on the other side of the drain and source regions of said second MOS transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and a control signal generation circuit for controlling a refresh operation of each of the memory cells by respectively supplying first and second control signals to said first and second control terminals of a preset number of memory cells of said memory cell array.

Claim 13

A dynamic memory comprising: a read/write node for communicating read/write data; a transfer gate control line for controlling transfer of data; a memory cell array formed of a plurality of dynamic memory cells arranged in a matrix form, each of said plurality of dynamic memory cells including: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to a transfer gate control line; a second MOS transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and source and drain regions one of which is connected to a first control terminal; a third MOS transistor for supplying a refresh current, and having source and drain regions one of which is connected to a second control terminal and the other of which is connected to said first storage node; and delay means connected between the gate of said third MOS transistor and a second storage node on the other side of the drain and source regions of said second MOS transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and a control signal generation circuit for controlling a refresh operation of each of the memory cells by respectively supplying first and second control signals to said first and second control terminals of a preset number of memory cells of said memory cell array.

Claim 14

A dynamic memory according to claim 10, wherein said control signal generation circuit is formed on the same chip as said memory cell array.

Claim 15

A dynamic memory according to claim 10, wherein said control signal generation circuit includes a terminal for supplying said control signal from the exterior of the chip.

Claim 16

A dynamic memory according to claim 10, wherein said control signal generation circuit sequentially raises the potential of the second control signal and the potential of the first control signal, and after a preset period of time, sequentially lowers the potential of the first control signal and the potential of the second control signal to refresh the dynamic memory cell.

Claim 17

A dynamic memory according to claim 10, wherein said control signal generation circuit changes the control signal between a reference potential and a preset potential higher than a power source potential in a pulse configuration.

Claim 18

A dynamic memory according to claim 10, wherein said control signal generation circuit sets the potentials of the first and second control signals to the reference potential at the time of read/write operation of said dynamic memory cell to turn off said third MO transistor.

Claim 19

A dynamic memory according to claim 10, wherein said read/write node is a bit line.

Claim 20

A dynamic memory according to claim 10, wherein said transfer gate control line is a word line.

Claim 21

A dynamic memory comprising: a read/write node for communication read/write data; a transfer gate control line for controlling transfer of data; a memory cell array formed of a plurality of dynamic memory cells arranged in a matrix form, each of said plurality of dynamic memory cells including: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to said transfer gate control line; a first thin film transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and a conductive film forming source and drain regions thereof and connected at one end to a first control terminal; a second thin film transistor for supplying a refresh current, and having source and drain terminals one of which is connected to a second control terminal and the other of which is connected to said first storage node and a gate formed of the same conductive film as that constituting the drain and source regions of said first thin film transistor; and delay means formed of the same conductive film as that of said first thin film transistor and connected between the gate of said second thin film transistor and a second storage node on the other side of the drain and source regions of said first thin film transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and a control signal generation circuit for controlling a refresh operation of each of the memory cells by respectively supplying first and second control signals to said first and second control terminals of a preset number of memory cells of said memory cell array.

Claim 22

A dynamic memory comprising: a read/write node for communication read/write data; a transfer gate control line for controlling transfer of data; a memory cell array formed of a plurality of dynamic memory cells arranged in a matrix form, each of said plurality of dynamic memory cells including: a first MOS transistor for transferring data, and having drain and source regions one of which is connected to a read/write node and a gate connected to said transfer gate control line; a first thin film transistor for storing data in a gate capacitor thereof, and having a gate connected to a first storage node on the other side of the drain and source regions of said first MOS transistor and a conductive film forming source and drain regions thereof and connected at one end to a first control terminal; a second thin film transistor for supplying a refresh current, and having source and drain terminals one of which is connected to a second control terminal and the other of which is connected to said first storage node and a gate formed of the same conductive film as that constituting the drain and source regions of said first thin film transistor; and delay means formed of the same conductive film as that of said first thin film transistor and connected between the gate of said second thin film transistor and a second storage node on the other side of the drain and source regions of said first thin film transistor, for delaying an off operation of said third MOS transistor during a predetermined delay time after a turn-on of said second MOS transistor; and a control signal generation circuit for controlling a refresh operation of each of the memory cells by respectively supplying first and second control signals to said first and second control terminals of a preset number of memory cells of said memory cell array.

Claim 23

A dynamic memory according to claim 18, wherein said control signal generation circuit is formed on the same chip as said memory cell array.

Claim 24

A dynamic memory according to claim 18, wherein said control signal generation circuit includes a terminal for supplying said control signal from the exterior of the chip.

Claim 25

A dynamic memory according to claim 18, wherein said control signal generation circuit sequentially raises the potential of the second control signal and the potential of the first control signal, and after a preset period of time, sequentially lowers the potential of the first control signal and the potential of the second control signal to refresh the dynamic memory cell.

Claim 26

A dynamic memory according to claim 18, wherein said control signal generation circuit changes the control signal between a reference potential and a preset potential higher than a power source potential in a pulse configuration.

Claim 27

A dynamic memory according to claim 18, wherein said control signal generation circuit sets the potentials of the first and second control signals to the reference potential at the time of read/write operation of said dynamic memory cell to turn off said second thin film transistor.

Claim 28

A dynamic memory according to claim 18, wherein said read/write node is a bit line.

Claim 29

A dynamic memory according to claim 18, wherein said transfer gate control line is a word line.