Patent US5260236A successfully refreshed from Google Patents.
US5260236A
Expired / Lapsed
US
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UV transparent oxynitride deposition in single wafer PECVD system
Assignee: Intel Corp
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Filing: 1992-02-25
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Granted: 1993-11-09
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Expires: 2012-02-25
Abstract
Abstract A high density, high frequency, plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on a semiconductor integrated circuit wafer. The wafer rests on a grounded electrode while a second electrode disperses gases over the wafer. The second electrode disperses the gases in the same manner as a showerhead. An radio-frequency (RF) potential applied to the showerhead electrode causes the gases to react under specific temperature, pressure, and electrode spacing conditions. Furthermore, the present invention is a low particulate process. The process forms a film of high UV transparency. The chamber is cleaned after removal of the wafer, and gas lines are evacuated. This results in a low particle process. The film have low within-wafer and wafer-to-wafer variation of thickness and refractive index, low pattern sensitivity of thickness of the deposited film, high deposition rate, high moisture resistance (low wet etched rate), low density of SiH and NH bonds, no pinholes, low stress, good sidewall step average, and high resistance to film cracking.
Inventors
- 👤 William G. Petro
- 👤 Farhad Moghadam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; C23C16/44; C23C16/4401; C23C16/4405; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S148/00; Y10S148/114; Y10S438/00; Y10S438/905; Y10S438/935
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
191 words
In the fabrication of a semiconductor wafer, a plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on said wafer, said process comprising the steps of: a) positioning said wafer on a first electrode in a vacuum chamber, wherein said wafer is heated to a process temperature and b) introducing a gas mixture of four gases into said vacuum chamber through a second electrode, said four gases being nitrogen, silane, ammonia and nitrous oxide, wherein the flow rate of nitrogen is between 500 and 4000 standard cubic centimeter/minute (sccm), the flow rate of silane is between 70 and 80 sccm, the flow rate of ammonia is between 50 and 150 sccm, and the flow rate of nitrous oxide is between 40 and 50 sccm, said second electrode being located a distance above said first electrode, said second electrode using a showerhead configuration to disperse said gas mixture; and c) applying a radio-frequency (RF) potential to said second electrode for a fixed amount of time such that said four gases in said gas mixture react to form said passivation layer, said RF potential being generated by an RF power supply.
Claim 2
Dependent Claim
191 words
In the fabrication of a semiconductor wafer, a plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on said wafer, said process comprising the steps of: a) positioning said wafer on a first electrode in a vacuum chamber, wherein said wafer is heated to a process temperature and b) introducing a gas mixture of four gases into said vacuum chamber through a second electrode, said four gases being nitrogen, silane, ammonia and nitrous oxide, wherein the flow rate of nitrogen is between 500 and 4000 standard cubic centimeter/minute (sccm), the flow rate of silane is between 70 and 80 sccm, the flow rate of ammonia is between 50 and 150 sccm, and the flow rate of nitrous oxide is between 40 and 50 sccm, said second electrode being located a distance above said first electrode, said second electrode using a showerhead configuration to disperse said gas mixture; and c) applying a radio-frequency (RF) potential to said second electrode for a fixed amount of time such that said four gases in said gas mixture react to form said passivation layer, said RF potential being generated by an RF power supply.
Claim 3
Dependent Claim
15 words
The process as in claim 1 wherein said process temperature range is from 350°-430° C.
Claim 4
Dependent Claim
16 words
The process as in claim 1 wherein said RF power is between 200 and 500 Watts.
Claim 5
Dependent Claim
14 words
The process as in claim 1 wherein said pressure range is from 4-6 Torr.
Claim 6
Dependent Claim
16 words
The process as in claim 1 wherein said distance is in the range of 300-600 mils.
Claim 7
Dependent Claim
57 words
The process as in claim 1 wherein said positioning step includes the steps of: positioning said wafer on a first electrode in a vacuum chamber, said first electrode being a succeptor; evacuating said vacuum chamber to a pressure range; heating said wafer to a process temperature range; and stabilizing said process temperature to said process temperature range.
Claim 8
Dependent Claim
232 words
In the fabrication of a semiconductor wafer, a high RF power density, high frequency, plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on said wafer, said process comprising the steps of: a) positioning said wafer on a first electrode in a vacuum chamber, wherein said chamber is at a process pressure, said wafer being heated to a process temperature, said process temperature ranging from 350°-430° C., said process pressure ranging from 4 to 6 Torr; b) introducing a gas mixture of four gases into said vacuum chamber through a second electrode, said four gases being nitrogen, silane, ammonia and nitrous oxide, wherein the flow rate of nitrogen is between 500 and 4000 sccm, the flow rate of silane is between 70 and 80 sccm, the flow rate of ammonia is between 50 and 150 sccm, the flow rate of nitrous oxide is between 40 and 50 sccm, said second electrode being located a distance above said first electrode, said distance in the range of 300-600 mils, said second electrode using a showerhead configuration to disperse said gas mixture; and c) applying a radio-frequency (RF) potential to said second electrode for a fixed amount of time, such that said four gases in said gas mixture react to form said passivation layer, said RF potential being generated by an RF power supply, said RF power being from 200 to 500 Watts.
Claim 9
Dependent Claim
232 words
In the fabrication of a semiconductor wafer, a high RF power density, high frequency, plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on said wafer, said process comprising the steps of: a) positioning said wafer on a first electrode in a vacuum chamber, wherein said chamber is at a process pressure, said wafer being heated to a process temperature, said process temperature ranging from 350°-430° C., said process pressure ranging from 4 to 6 Torr; b) introducing a gas mixture of four gases into said vacuum chamber through a second electrode, said four gases being nitrogen, silane, ammonia and nitrous oxide, wherein the flow rate of nitrogen is between 500 and 4000 sccm, the flow rate of silane is between 70 and 80 sccm, the flow rate of ammonia is between 50 and 150 sccm, the flow rate of nitrous oxide is between 40 and 50 sccm, said second electrode being located a distance above said first electrode, said distance in the range of 300-600 mils, said second electrode using a showerhead configuration to disperse said gas mixture; and c) applying a radio-frequency (RF) potential to said second electrode for a fixed amount of time, such that said four gases in said gas mixture react to form said passivation layer, said RF potential being generated by an RF power supply, said RF power being from 200 to 500 Watts.
Claim 10
Dependent Claim
115 words
The process as defined in claim 7 wherein said chamber has a gas line for each of the gases in said gas mixture, and wherein each gas line has a gas shut off valve and a mass flow controller (MFC) valve, said process comprising the steps of: closing the MFC valves; opening the gas shut off valves; evacuating the gas input lines between said chamber and said MFC valves; closing the shut off valves; and repeating steps a)-c), including the step of opening the gas shut off valves and MFC valves slowly to prevent large bursts of gases when introducing gases into said chamber, such that a PECVD process is performed on the next wafer.
Claim 11
Dependent Claim
25 words
The method defined in claim 8 further comprising the step of cleaning said chamber with NF 3 and N 2 O plasma after said deposition.
Claim 12
Dependent Claim
57 words
The process as in claim 7 wherein said positioning step includes the steps of: positioning said wafer on a first electrode in a vacuum chamber, said first electrode being a succeptor; evacuating said vacuum chamber to said pressure range; heating said wafer to said process temperature range; and stabilizing said process temperature to said process temperature range.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-08 | 1997-05-10 | 1997-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-08 | 2001-05-10 | 2001-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-08 | 2005-05-10 | 2005-11-09 | $7700.00 | Window Closed / Lapsed |