High throughput multi station processor for multiple single wafers

Claim 2

A CVD reactor having at least two stations for processing one wafer at each station, said reactor comprising in combination: (a) one susceptor disposed at each station for supporting a single wafer, the number of said susceptors being commensurate with the number of stations within said reactor; (b) a gas dispersion head associated with each of said susceptors for dispersing a gas upon the associated susceptor supported wafer; and (c) means for urging outward radial flow of the gas across each of the susceptor supported wafers to the peripheral edge of the respective wafers and downwardly along the peripheral edge of the respective one of said susceptors.

Claim 3

The reactor as set forth in claim 1 including means disposed in each of said susceptors for heating the wafer supported thereon.

Claim 4

The reactor as set forth in claim 1 including means for simultaneously irradiating with RF energy the gas flowing across each of the supported wafers.

Claim 5

The reactor as set forth in claim 3 including means disposed in each of said susceptors for heating the wafer supported thereon.

Claim 6

The reactor as set forth in claim 2 wherein each of said susceptors includes a hollow shaft for housing electrical conductors extending from said heating means.

Claim 7

The reactor as set forth in claim 5 including temperature sensing means disposed in each of said susceptors and means for conveying the temperature sensed through the bore of said shaft.

Claim 8

The reactor as set forth in claim 1 wherein said reactor includes a cover, a bottom plate, a sidewall interconnecting said cover and said bottom plate, a further plate displaced from said bottom plate for defining an exhaust chamber between said bottom plate and said further plate, means for supporting each of said susceptors upon said further plate and means for suspending each of said gas dispersion heads from said cover.

Claim 9

The reactor as set forth in claim 7 including first means for positionally adjusting each of said susceptors upon said further plate, second means for positionally adjusting each of said gas dispersion heads with respect to the associated one of said susceptors and access means for accommodating manipulation of said first and second adjusting means.

Claim 10

The reactor as set forth in claim 8 wherein said suspending means comprises a plurality of radially extending arms depending from said cover, the number of said arms being equal to the number of said susceptors, each of said arms being equal to the number of said susceptors, each of said arms including means for supporting one of said gas dispersion heads and wherein said supporting means includes said second adjusting means.

Claim 11

The reactor as set forth in claim 9 wherein each of said arms includes means for conveying the gas from a source of gas to the respective one of said gas dispersion heads.

Claim 12

The reactor as set forth in claim 10 including a source of RF energy and means for irradiating each wafer with RF energy from said source.

Claim 13

The reactor as set forth in claim 11 wherein each of said gas dispersion heads comprises one electrode electrically connected to said RF source and wherein each of said susceptors comprises another electrode electrically connected to said RF source.

Claim 14

The reactor as set forth in claim 1 including a plurality of said susceptors disposed circularly within said reactor, each of said susceptors being capable of supporting a single wafer, a plurality of said gas dispersion heads, each of said gas dispersion heads being associated with one susceptor of said plurality of susceptors.

Claim 15

The reactor as set forth in claim 13 including means for suspending from a common point each of said gas dispersion heads above the respective ones of said plurality of susceptors.

Claim 16

The reactor as set forth in claim 14 including a source of RF energy and means for irradiating the gas flowing across the susceptor supported wafers with RF energy.

Claim 17

The reactor as set forth in claim 14 including a source of RF energy and wherein said plurality of gas dispersion heads comprises an electrode electrically connected to said RF source for irradiating the gas flowing across the wafer of the respective one of said plurality of susceptors.

Claim 18

The reactor as set forth in claim 16 including means disposed in each susceptor of said plurality of susceptors for heating the respective wafer.

Claim 19

The reactor as set forth in claim 13 wherein each susceptor of said plurality of susceptors includes an underside, said reactor including an exhaust chamber and means for drawing the gas from the perimeter of each wafer to the underside of the supporting susceptor of said plurality of susceptors and into said exhaust chamber.

Claim 20

The reactor as set forth in claim 13 including a spider for transporting each of the wafers sequentially from one susceptor to an adjacent susceptor of said plurality of susceptors on completion of a cycle of the CVD process being performed.

Claim 21

The reactor as set forth in claim 19 wherein said spider includes a plurality of pairs of stalks for supporting the wafers during transport, each pair of said pairs of stalks being associated with one susceptor of said plurality of susceptors.

Claim 22

The reactor as set forth in claim 20 wherein said spider is vertically repositionable to raise and lower the wafers and angularly repositionable to align sequentially said pairs of stalks with said plurality of susceptors.

Claim 23

The reactor as set forth in claim 21 wherein each susceptor of said plurality of susceptors includes a pair of grooves for receiving a pair of said plurality of pairs of stalks.

Claim 24

The reactor as set forth in claim 1 including means for equalizing the gas delivery from each of said gas dispersion heads.

Claim 25

A CVD reactor having at least one station for processing at least one wafer, said reactor comprising in combination: (a) at least one susceptor for supporting a single wafer, the number of said susceptors being commensurate with the number of stations within said reactor; (b) a gas dispersion head associated with each of said susceptors for dispersing a gas upon the associated susceptor supported wafer; (c) means for urging outward radial flow of the gas across the supported wafer to the peripheral edge of the wafer; (d) a plate; (e) a further plate located intermediate said plate and each of said susceptors for defining an exhaust chamber between said plate and said further plate; (f) an exhaust pipe assembly for drawing gas from said exhaust chamber; and (g) passageway means disposed in said further plate for channeling flow of the gas from each of the supported wafers and through said further plate at a location proximate each of said susceptors and into said exhaust chamber.

Claim 26

A CVD reactor having at least one station for processing at least one wafer, said reactor comprising in combination: (a) at least one susceptor for supporting a single wafer, the number of said susceptors being commensurate with the number of stations within said reactor; (b) a gas dispersion head associated with each of said susceptors for dispersing a gas upon the associated susceptor supported wafer; (c) means for urging outward radial flow of the gas across the supported wafer to the peripheral edge of the wafer; (d) a plate; (e) a further plate located intermediate said plate and each of said susceptors for defining an exhaust chamber between said plate and said further plate; (f) an exhaust pipe assembly for drawing gas from said exhaust chamber; and (g) passageway means disposed in said further plate for channeling flow of the gas from each of the supported wafers and through said further plate at a location proximate each of said susceptors and into said exhaust chamber.

Claim 27

The reactor as set forth in claim 24 wherein each of said susceptors is circular in planform with a vertical axis of rotation and each of said susceptors including a downwardly extending axially aligned shaft penetrably engaging said further plate and wherein said passageway means comprises an annular passageway disposed about said shaft.

Claim 28

The reactor as set forth in claim 25 wherein said plate includes an aperture for accommodating penetration of said shaft and bowing of said plate without inducing commensurate repositioning of said shaft and seal means for sealing the junction between said shaft and said plate.

Claim 29

A CVD reactor having at least one station for processing at least one wafer, said reactor comprising in combination: (a) at least one susceptor for supporting a single wafer, the number of said susceptors being commensurate with the number of stations within said reactor; (b) a gas dispersion head associated with each of said susceptors for dispersing a gas upon the associated susceptor supported wafer; (c) means for urging outward radial flow of the gas across the supported wafer to the peripheral edge of the wafer; (d) a cover; (e) a bottom plate; (f) a sidewall interconnecting said cover and said bottom plate; (g) a further plate displaced from said bottom plate for defining an exhaust chamber between said bottom plate and said further plate; (h) means for supporting each of said susceptors upon said further plate; (i) means for suspending each of said gas dispersion heads from said cover; (j) first means for positionally adjusting each of said susceptors upon said further plate; (k) second means for positionally adjusting each of said gas dispersion heads with respect to the associated one of said susceptors; (l) access means for accommodating manipulation of said first and second adjusting means, said access means comprising at least one opening in said cover, each of said openings being associated with at least one of said susceptors and the associated one of said gas dispersion heads; and (m) a removable hatch for openably covering and sealing each of said openings.

Claim 30

A CVD reactor having at least one station for processing at least one wafer, said reactor comprising in combination: (a) at least one susceptor for supporting a single wafer, the number of said susceptors being commensurate with the number of stations within said reactor; (b) a gas dispersion head associated with each of said susceptors for dispersing a gas upon the associated susceptor supported wafer; (c) means for urging outward radial flow of the gas across the supported wafer to the peripheral edge of the wafer; (d) a cover; (e) a bottom plate; (f) a sidewall interconnecting said cover and said bottom plate; (g) a further plate displaced from said bottom plate for defining an exhaust chamber between said bottom plate and said further plate; (h) means for supporting each of said susceptors upon said further plate; (i) means for suspending each of said gas dispersion heads from said cover; (j) first means for positionally adjusting each of said susceptors upon said further plate; (k) second means for positionally adjusting each of said gas dispersion heads with respect to the associated one of said susceptors; (l) access means for accommodating manipulation of said first and second adjusting means, said access means comprising at least one opening in said cover, each of said openings being associated with at least one of said susceptors and the associated one of said gas dispersion heads; and (m) a removable hatch for openably covering and sealing each of said openings.