Patent US5258644A successfully refreshed from Google Patents.
US5258644A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacture thereof
Assignee: Hitachi Ltd
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Filing: 1992-07-23
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Granted: 1993-11-02
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Expires: 2012-07-23
Abstract
Abstract An improved bipolar transistor is provided which can be formed using a number of process steps which are similar to those used for forming MOSFETs. As such, the bipolar transistor is particularly useful in BiCMOS device arrangements. In accordance with one embodiment, a bipolar transistor is formed so that at least one of the emitter and collector regions has a high impurity region and a low impurity region. The collector and emitter regions of the device are formed in the base region to be spaced apart from one another, and the base electrode is arranged to cover the area of the base region between them. In an alternative embodiment, two collector regions can be provided in a base region on opposite sides of an emitter which is also formed in the base region. Two base electrodes can then be respectively provided in the areas between the two collectors and the emitter region. The bipolar transistors are particularly useful for forming a horizontal bipolar transistor structure. Because the bipolar transistors can be formed using the same types of steps used in the manufacture of MOSFETs, the manufacturing costs of the device can be reduced without sacrificing operational capabilities. This is particularly true in the manufacture of BiCMOS devices because many simultaneous manufacturing steps can be used for manufacturing the bipolar transistors and the MOSFETs.
Inventors
- 👤 Akihiro Tamba
- 👤 Yutaka Kobayashi
- 👤 Tetsurou Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 22:02
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/60
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
161 words
A bipolar transistor formed in a semiconductor substrate comprising: a base region of a first conductivity type formed at a first major surface of said semiconductor substrate; an emitter region of a second conductivity type formed in said base region; a first collector region of the second conductivity type formed in said base region; a second collector region of the second conductivity type formed in said base region; a first base electrode coupled to said base region at a first portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said first collector region; and a second base electrode coupled to said base region at a second portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said second collector region.
Claim 2
Dependent Claim
161 words
A bipolar transistor formed in a semiconductor substrate comprising: a base region of a first conductivity type formed at a first major surface of said semiconductor substrate; an emitter region of a second conductivity type formed in said base region; a first collector region of the second conductivity type formed in said base region; a second collector region of the second conductivity type formed in said base region; a first base electrode coupled to said base region at a first portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said first collector region; and a second base electrode coupled to said base region at a second portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said second collector region.
Claim 3
Dependent Claim
20 words
A bipolar transistor according to claim 1, wherein said base electrode and said second base electrode include a polycrystalline semiconductor.
Claim 4
Dependent Claim
21 words
A bipolar transistor according to claim 1, wherein the first conductivity type is p-type and the second conductivity type is n-type.
Claim 5
Dependent Claim
102 words
A bipolar transistor according to claim 1, wherein said bipolar transistor further comprises: a first base high concentration region of the first conductivity type formed at said first portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region; and a second base high concentration region of the first conductivity type formed at said second portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region.
Claim 6
Dependent Claim
16 words
A bipolar transistor according to claim 1, wherein said semiconductor substrate includes at least one MOSFET.
Claim 7
Dependent Claim
102 words
A bipolar transistor according to claim 1, wherein the first collector region includes a first collector portion and a second collector portion, wherein the second collector portion has a lower impurity concentration than an impurity concentration of said first collector portion and is formed between said first collector portion and said first base electrode, and wherein said second collector region includes a third collector portion and a fourth collector portion, wherein said fourth collector portion has a lower impurity concentration than an impurity concentration of said third collector portion and is formed between said third collector portion and said second base electrode.
Claim 8
Dependent Claim
41 words
A bipolar transistor according to claim 6, wherein said emitter region, and said first, second, third and fourth collector portions are all exposed to said first major surface of said substrate so that said bipolar transistor comprises a horizontal bipolar transistor.
Claim 9
Dependent Claim
102 words
A bipolar transistor according to claim 7, wherein said bipolar transistor further comprises: a first base high concentration region of the first conductivity type formed at said first portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region; and a second base high concentration region of the first conductivity type formed at said second portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region.
Claim 10
Dependent Claim
57 words
A bipolar transistor according to claim 6, wherein said emitter region includes a first emitter portion, a second emitter portion and a third emitter portion, wherein said first emitter portion is formed between said second and third emitter portions, and wherein said first emitter portion has a higher impurity concentration than said second and third emitter portions.
Claim 11
Dependent Claim
39 words
A bipolar transistor according to claim 1, wherein said emitter region, and said first and second collector regions are all exposed to said first major surface of said substrate so that said bipolar transistor comprises a horizontal bipolar transistor.
Claim 12
Dependent Claim
434 words
A bipolar transistor formed in a semiconductor substrate comprising: a base region of a first conductivity type formed at a first major surface of said semiconductor substrate; an emitter region of a second conductivity type formed in said base region; a first collector region of the second conductivity type formed in said base region; a second collector region of the second conductivity type formed in said base region; a first base electrode coupled to said base region at a first portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said first collector region; and a second base electrode coupled to said base region at a second portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said second collector region; wherein the first collector region includes a first collector portion and a second collector portion, wherein the second collector portion has a lower impurity concentration than an impurity concentration of said first collector portion and is formed between said first collector portion and said first base electrode, and wherein said second collector region includes a third collector portion and a fourth collector portion, wherein said fourth collector portion has a lower impurity concentration than an impurity concentration of said third collector portion and is formed between said third collector portion and said second base electrode; wherein said emitter region, and said first, second, third and fourth collector portions are all exposed to said first major surface of said substrate so that said bipolar transistor comprises a horizontal bipolar transistor; wherein said bipolar transistor further comprises: a first base high concentration region of the first conductivity type formed at said first portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region; and a second base high concentration region of the conductivity type formed at said second portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region, wherein said emitter region includes a first emitter portion, a second emitter portion and a third emitter portion, wherein said first emitter portion is formed between said second and third emitter portions, and wherein said first emitter portion has a higher impurity concentration than said second and third emitter portions.
Claim 13
Dependent Claim
434 words
A bipolar transistor formed in a semiconductor substrate comprising: a base region of a first conductivity type formed at a first major surface of said semiconductor substrate; an emitter region of a second conductivity type formed in said base region; a first collector region of the second conductivity type formed in said base region; a second collector region of the second conductivity type formed in said base region; a first base electrode coupled to said base region at a first portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said first collector region; and a second base electrode coupled to said base region at a second portion of said base region exposed at said first major surface of said semiconductor substrate to cover at least a portion of said base region between said emitter region and said second collector region; wherein the first collector region includes a first collector portion and a second collector portion, wherein the second collector portion has a lower impurity concentration than an impurity concentration of said first collector portion and is formed between said first collector portion and said first base electrode, and wherein said second collector region includes a third collector portion and a fourth collector portion, wherein said fourth collector portion has a lower impurity concentration than an impurity concentration of said third collector portion and is formed between said third collector portion and said second base electrode; wherein said emitter region, and said first, second, third and fourth collector portions are all exposed to said first major surface of said substrate so that said bipolar transistor comprises a horizontal bipolar transistor; wherein said bipolar transistor further comprises: a first base high concentration region of the first conductivity type formed at said first portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region; and a second base high concentration region of the conductivity type formed at said second portion of said base region exposed at said first major surface of said semiconductor substrate, and having a higher impurity concentration than an impurity concentration of said base region, wherein said emitter region includes a first emitter portion, a second emitter portion and a third emitter portion, wherein said first emitter portion is formed between said second and third emitter portions, and wherein said first emitter portion has a higher impurity concentration than said second and third emitter portions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-01 | 1997-05-03 | 1997-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-01 | 2001-05-03 | 2001-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-01 | 2005-05-03 | 2005-11-02 | $7700.00 | Window Closed / Lapsed |