US4602267A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Protection element for semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1982-02-05
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Granted: 1986-07-22
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Expires: 2002-02-05
Abstract
Abstract A protection element responsible for protecting a semiconductor element included in a semiconductor device from a voltage higher than the voltage which the semiconductor element is allowed to receive, the protection element virtually being a lateral bipolar transistor, in which an improvement is made to increase the voltage at which the protection element operates. The improvement being realized by separating the emitter from a region containing an impurity at a high concentration and which is a portion of the base of the lateral bipolar transistor.
Inventors
- 👤 Takehide Shirato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:47
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/711
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
272 words
A protection element responsible for protecting a semiconductor element included in a semiconductor device having a semiconductor substrate, said protection element preventing the semiconductor element from receiving voltages higher than a maximum allowed voltage, said protection element comprising: power supply means for providing a power supply voltage; a first region having a first conductivity type; an insulating layer substantially covering said first region; a second region having a second conductivity type different from that of said first region, said second region being formed in a first selected top portion of said first region; a third region having the second conductivity type, said third region being formed in a second selected top portion of said first region; a fourth region disposed between said second region and said third region, said fourth region being covered by said insulating layer, said fourth region being of the first conductivity type at a higher impurity concentration than that of said first region, said fourth region being separated from said second region, and said fourth region preventing punch-through between said second and third regions; a first electrode connected to the semiconductor element and to said second region; and a second electrode in contact with said third region, connected to receive the power supply voltage from said power supply means, the power supply voltage being such that a current flows between said second and third regions by a bipolar transistor action with the first region acting as a base when the voltage higher than the maximum allowed voltage are applied to said first electrode, thereby preventing the semiconductor element from receiving the voltages higher than the maximum allowed voltage.
Claim 2
Dependent Claim
272 words
A protection element responsible for protecting a semiconductor element included in a semiconductor device having a semiconductor substrate, said protection element preventing the semiconductor element from receiving voltages higher than a maximum allowed voltage, said protection element comprising: power supply means for providing a power supply voltage; a first region having a first conductivity type; an insulating layer substantially covering said first region; a second region having a second conductivity type different from that of said first region, said second region being formed in a first selected top portion of said first region; a third region having the second conductivity type, said third region being formed in a second selected top portion of said first region; a fourth region disposed between said second region and said third region, said fourth region being covered by said insulating layer, said fourth region being of the first conductivity type at a higher impurity concentration than that of said first region, said fourth region being separated from said second region, and said fourth region preventing punch-through between said second and third regions; a first electrode connected to the semiconductor element and to said second region; and a second electrode in contact with said third region, connected to receive the power supply voltage from said power supply means, the power supply voltage being such that a current flows between said second and third regions by a bipolar transistor action with the first region acting as a base when the voltage higher than the maximum allowed voltage are applied to said first electrode, thereby preventing the semiconductor element from receiving the voltages higher than the maximum allowed voltage.
Claim 3
Dependent Claim
16 words
A protection element as defined in claim 1, wherein said first region is the semiconductor substrate.
Claim 4
Dependent Claim
40 words
A protection element as defined in claim 1, wherein said first region is a well region and the semiconductor substrate has the second conductivity type, said well region being formed in at least one selected portion of the semiconductor substrate.
Claim 5
Dependent Claim
256 words
A protection element responsible for protecting a semiconductor element included in a semiconductor device having a semiconductor substrate of a first conductivity type, said protection element preventing the semiconductor element from receiving voltages higher than a maximum allowed voltage, said protection element comprising: power supply means for providing a power supply voltage; a first region having a second conductivity type different from the first conductivity type, said first region being a well region formed in at least one selected portion of the semiconductor substrate; an insulating layer substantially covering said first region; a second region having the first conductivity type, said second region being formed in a first selected top portion of said first region; a third region having the first conductivity type, said third region being formed in a second selected top portion of said first region; a fourth region disposed between said second region and said third region, said fourth region being covered by said insulating layer, said fourth region being of the second conductivity type at a higher impurity concentration than that of said first region, said fourth region being separated from said second region, and said fourth region preventing punch-through between said second and third regions; a first electrode connected to the semiconductor element and to said second region; a second electrode in contact with said third region and said power supply means; and a fifth region surrounding and contacting said second region, said fifth region having the first conductivity type at a lower impurity concentration than that of said second region.
Claim 6
Dependent Claim
256 words
A protection element responsible for protecting a semiconductor element included in a semiconductor device having a semiconductor substrate of a first conductivity type, said protection element preventing the semiconductor element from receiving voltages higher than a maximum allowed voltage, said protection element comprising: power supply means for providing a power supply voltage; a first region having a second conductivity type different from the first conductivity type, said first region being a well region formed in at least one selected portion of the semiconductor substrate; an insulating layer substantially covering said first region; a second region having the first conductivity type, said second region being formed in a first selected top portion of said first region; a third region having the first conductivity type, said third region being formed in a second selected top portion of said first region; a fourth region disposed between said second region and said third region, said fourth region being covered by said insulating layer, said fourth region being of the second conductivity type at a higher impurity concentration than that of said first region, said fourth region being separated from said second region, and said fourth region preventing punch-through between said second and third regions; a first electrode connected to the semiconductor element and to said second region; a second electrode in contact with said third region and said power supply means; and a fifth region surrounding and contacting said second region, said fifth region having the first conductivity type at a lower impurity concentration than that of said second region.
Claim 7
Dependent Claim
19 words
A protection element as defined in claim 4, wherein said fifth region is in contact with said fourth region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-21 | 1990-01-20 | 1990-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-21 | 1994-01-20 | 1994-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-21 | 1998-01-20 | 1998-07-22 | $7700.00 | Window Closed / Lapsed |