Single crystal silicon on quartz

Claim 1

A method for fabricating single crystal silicon islands on a quartz substrate, comprising: depositing an etch stop layer on a single crystal silicon substrate; depositing a single crystal silicon device layer on the etch stop layer; bonding a quartz substrate to the single crystal silicon device layer, at room temperature; sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate; grinding away a portion of the silicon substrate and a portion of the adhesive; etching away a remaining portion of the silicon substrate; removing a remaining portion of the adhesive; etching away the etch stop layer; applying a photoresist mask on the single crystal silicon device layer, for defining islands on the single crystal silicon device layer; etching the single crystal silicon islands; and diffusion bonding the single crystal silicon islands to the quartz substrate.

Claim 2

A method for fabricating single crystal silicon islands on a quartz substrate, comprising: depositing an etch stop layer on a single crystal silicon substrate; depositing a single crystal silicon device layer on the etch stop layer; bonding a quartz substrate to the single crystal silicon device layer, at room temperature; sealing and securing with an adhesive the edges of the single crystal silicon substrate, the etch stop layer, the single crystal silicon device layer and the quartz substrate; grinding away a portion of the silicon substrate and a portion of the adhesive; etching away a remaining portion of the silicon substrate; removing a remaining portion of the adhesive; etching away the etch stop layer; applying a photoresist mask on the single crystal silicon device layer, for defining islands on the single crystal silicon device layer; etching the single crystal silicon islands; and diffusion bonding the single crystal silicon islands to the quartz substrate.

Claim 6

The method of claim further comprising fabricating an active matrix pixel array and integrated row and column drivers on the single crystal silicon islands for an electroluminescent display.

Claim 8

A method for fabricating single crystal silicon islands on a high temperature substrate at room temperature, comprising: depositing an etch stop layer on a silicon substrate; depositing a single crystal silicon layer on the etch stop layer; bonding a high temperature substrate to the single crystal silicon layer; sealing and securing at the edges, the silicon substrate, the etch stop layer and the single crystal silicon layer to the high temperature substrate; grinding away a portion of the silicon substrate; etching away a remaining portion of the silicon substrate; removing the adhesive; etching away the etch stop layer; applying a mask on the single crystal silicon layer, for defining islands on the single crystal silicon layer; and etching the single crystal silicon islands.

Claim 9

A method for fabricating single crystal silicon islands on a high temperature substrate at room temperature, comprising: depositing an etch stop layer on a silicon substrate; depositing a single crystal silicon layer on the etch stop layer; bonding a high temperature substrate to the single crystal silicon layer; sealing and securing at the edges, the silicon substrate, the etch stop layer and the single crystal silicon layer to the high temperature substrate; grinding away a portion of the silicon substrate; etching away a remaining portion of the silicon substrate; removing the adhesive; etching away the etch stop layer; applying a mask on the single crystal silicon layer, for defining islands on the single crystal silicon layer; and etching the single crystal silicon islands.

Claim 13

A method for fabricating single crystal silicon islands on a high temperature substrate at room temperature, comprising: depositing a stop layer on a silicon substrate; depositing a single crystal silicon layer on the stop layer; bonding a high temperature substrate to the single crystal silicon layer; sealing and securing at the edges, the silicon substrate, the stop layer and the single crystal silicon layer to the high temperature substrate; removing the silicon substrate to the stop layer; removing the adhesive; removing the stop layer; applying a mask on the single crystal silicon layer for defining islands; and etching the single crystal silicon islands.

Claim 14

A method for fabricating single crystal silicon islands on a high temperature substrate at room temperature, comprising: depositing a stop layer on a silicon substrate; depositing a single crystal silicon layer on the stop layer; bonding a high temperature substrate to the single crystal silicon layer; sealing and securing at the edges, the silicon substrate, the stop layer and the single crystal silicon layer to the high temperature substrate; removing the silicon substrate to the stop layer; removing the adhesive; removing the stop layer; applying a mask on the single crystal silicon layer for defining islands; and etching the single crystal silicon islands.

Claim 18

A method for fabricating islands of high mobility thin film transistors as integrated drivers on a substrate, comprising: epitaxially depositing a 2 micron thick heavily boron (P++) doped silicon layer as an etch stop layer on an approximately 22 mil lightly boron (P-) doped single crystal silicon substrate at about 900 degrees Centigrade; epitaxially depositing an approximately 0.6 micron thick lightly boron (P-) doped single crystal silicon device layer on the silicon etch stop layer at about 900 degrees Centigrade, the single crystal silicon device layer having a surface having no more than a 0.3 micron variation in surface relative to a true plane at the surface; cleaning the surface of the single crystal device layer in a solution containing H 2 O 2 ; bonding a surface of an amorphous quartz substrate, the surface of the quartz substrate having no more than a 0.3 micron variation in surface relative to a true plane at the surface, to the cleaned surface of the single crystal silicon device layer, wherein the surfaces of the quartz substrate and silicon device layer naturally bond through hydrogen-oxygen (H--0) bonding at room temperature; securing and sealing the bond of the single crystal silicon device layer and the quartz layer with an adhesive EPO-TEK 301 applied to edge of the silicon substrate, etch stop layer, single crystal silicon device layer and quartz layer; grinding away a portion of the silicon substrate and a portion of the adhesive; etching away a remaining portion of the silicon substrate with ethylenediamine pyrocatechol; removing a remaining portion of the adhesive; etching away the etch stop layer with an etchant; defining islands with a photoresist mask applied to the single crystal silicon device layer; dry etching of single crystal silicon islands, with reactive ion etching, portions of the single crystal device layer, according to a pattern of the photoresist mask; diffusion bonding the single crystal silicon islands to the quartz substrate at about 1000 degrees Centigrade; and thermal oxidizing the single crystal silicon islands in ambient oxygen at about 1000 degrees Centigrade, to form a 500 angstrom layer of silicon dioxide on the silicon islands.

Claim 19

A method for fabricating islands of high mobility thin film transistors as integrated drivers on a substrate, comprising: epitaxially depositing a 2 micron thick heavily boron (P++) doped silicon layer as an etch stop layer on an approximately 22 mil lightly boron (P-) doped single crystal silicon substrate at about 900 degrees Centigrade; epitaxially depositing an approximately 0.6 micron thick lightly boron (P-) doped single crystal silicon device layer on the silicon etch stop layer at about 900 degrees Centigrade, the single crystal silicon device layer having a surface having no more than a 0.3 micron variation in surface relative to a true plane at the surface; cleaning the surface of the single crystal device layer in a solution containing H 2 O 2 ; bonding a surface of an amorphous quartz substrate, the surface of the quartz substrate having no more than a 0.3 micron variation in surface relative to a true plane at the surface, to the cleaned surface of the single crystal silicon device layer, wherein the surfaces of the quartz substrate and silicon device layer naturally bond through hydrogen-oxygen (H--0) bonding at room temperature; securing and sealing the bond of the single crystal silicon device layer and the quartz layer with an adhesive EPO-TEK 301 applied to edge of the silicon substrate, etch stop layer, single crystal silicon device layer and quartz layer; grinding away a portion of the silicon substrate and a portion of the adhesive; etching away a remaining portion of the silicon substrate with ethylenediamine pyrocatechol; removing a remaining portion of the adhesive; etching away the etch stop layer with an etchant; defining islands with a photoresist mask applied to the single crystal silicon device layer; dry etching of single crystal silicon islands, with reactive ion etching, portions of the single crystal device layer, according to a pattern of the photoresist mask; diffusion bonding the single crystal silicon islands to the quartz substrate at about 1000 degrees Centigrade; and thermal oxidizing the single crystal silicon islands in ambient oxygen at about 1000 degrees Centigrade, to form a 500 angstrom layer of silicon dioxide on the silicon islands.