EP0362838A2
Expired / Lapsed
EP
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A method of fabricating semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1989-10-05
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Granted: —
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Expires: 2009-10-05
Abstract
Abstract In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, an excessive deposition brittle on an edge of the semiconductor wafer is removed by grinding or etching of the wafer edge until the underlying wafer is exposed. The removal of the deposition on the wafer edge reduces dust generation caused from crack and peel-off of the excessive deposition on the wafer edge, even if the wafer edge contacts a jig, etc.. Thus the reduction in dust generation improves production yields of highly integrated semiconductor devices.
Inventors
- 👤 Kazunori Imaoka
- 👤 Yoichi Fijisawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 16:34
CPC Classifications
H; H10; H10P; H10P50/00; B; B24; B24B; B24B9/00; B24B9/02; B24B9/06; B24B9/065; H10P52/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
70 words
A method of fabricating semiconductor devices, comprising the steps of: preparing a semiconductor wafer, on an area of said wafer a functional semiconductor element being to be fabricated; forming on said area at least one layer which is to become a member constituting said semiconductor element; and grinding or etching a peripheral portion of said wafer having said layer fabricated thereon, so as to expose an edge of said wafer.
Claim 2
Independent Claim
70 words
A method of fabricating semiconductor devices, comprising the steps of: preparing a semiconductor wafer, on an area of said wafer a functional semiconductor element being to be fabricated; forming on said area at least one layer which is to become a member constituting said semiconductor element; and grinding or etching a peripheral portion of said wafer having said layer fabricated thereon, so as to expose an edge of said wafer.
Claim 3
Dependent Claim
33 words
A method of fabricating semiconductor devices as recited in claim 1, wherein said grinding or etching step is carried out so as to remove a protrusion on said peripheral portion of said wafer.
Claim 4
Dependent Claim
37 words
A method of fabricating semiconductor devices as recited in claim 1, wherein said grinding or etching step is carried out so that said edge of of said peripheral portion shows a curvature having a mirror finish surface.
Claim 5
Dependent Claim
45 words
A method of fabricating semiconductor device as recited in claim 1, wherein prior to said grinding or etching step a protection layer is formed so as to cover at least a surface of said wafer, on said surface said semiconductor element is to be fabricated.
Claim 6
Dependent Claim
34 words
A method of fabricating semiconductor devices as recited in claim 1 or 4, wherein said grinding or etching step is carried out prior to a step of fabricating a wiring of said semiconductor device.
Claim 7
Dependent Claim
50 words
A method of fabricating semiconductor devices as recited in claim 1 or 4, wherein said grinding or etching step is carried out at least one time at a step positioning in an approximate range of 1/3 to 5/6 from the beginning of entire wafer processes for fabricating the semiconductor device.
Claim 8
Dependent Claim
40 words
A method of fabricating semiconductor devices as recited in claim 1 or 4, wherein said grinding or etching step is carried out at each step of forming said layer which is to become a member to constitute said semiconductor element.
References Cited (Backward Citations)
No citation records indexed.
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