Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip

Claim 1

A method of manufacturing a semiconductor device comprising a power stage with vertical current flow, containing at least one BMFET transistor, and a control circuit, integrated in monolithic form in a single chip, comprising the following steps: growing a first n type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming a first p+ type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming a first p+ type region inside said first n type epitaxial layer, to constitute a horizontal isolation region of the integrated control circuit components; forming a first n+ type region inside said first p+ type region, to provide a buried collector layer of a transistor of the integrated control circuit; growing a second n type epitaxial layer, extending over the whole area of the chip; forming second and third p+ type regions inside the second epitaxial layer, using oxidation, photomasking, implantation and subsequent diffusion techniques, said second p+ type region constituting the gate of the BMFET transistor, and said third p+ type region extending from the surface of the second epitaxial layer inside said second epitaxial layer to join said first p+ type region; forming two second n+ type regions, one of said two second n+ type regions constituting the source of the BMFET transistor, extending between two adjacent regions of said third p+ type regions, and the other of said two second n+ type regions constituting the collector sinker, being positioned above said first n+ type region and joining it; forming, above said first n+ type region, a base region and an emitter region of an NPN low voltage transistor, defining the contact areas of the semiconductor device by means of photomasking and etching techniques, and providing interconnection tracks among the components of the device by means of metallization and patterning techniques.

Claim 2

A method of manufacturing a semiconductor device comprising a power stage with vertical current flow, containing at least one BMFET transistor, and a control circuit, integrated in monolithic form in a single chip, comprising the following steps: growing a first n type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming a first p+ type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming a first p+ type region inside said first n type epitaxial layer, to constitute a horizontal isolation region of the integrated control circuit components; forming a first n+ type region inside said first p+ type region, to provide a buried collector layer of a transistor of the integrated control circuit; growing a second n type epitaxial layer, extending over the whole area of the chip; forming second and third p+ type regions inside the second epitaxial layer, using oxidation, photomasking, implantation and subsequent diffusion techniques, said second p+ type region constituting the gate of the BMFET transistor, and said third p+ type region extending from the surface of the second epitaxial layer inside said second epitaxial layer to join said first p+ type region; forming two second n+ type regions, one of said two second n+ type regions constituting the source of the BMFET transistor, extending between two adjacent regions of said third p+ type regions, and the other of said two second n+ type regions constituting the collector sinker, being positioned above said first n+ type region and joining it; forming, above said first n+ type region, a base region and an emitter region of an NPN low voltage transistor, defining the contact areas of the semiconductor device by means of photomasking and etching techniques, and providing interconnection tracks among the components of the device by means of metallization and patterning techniques.

Claim 3

A method of manufacturing a semiconductor device comprising a power stage with vertical current flow, containing at least one BMFET transistor, and a control circuit, integrated in monolithic form in a single chip comprising the following steps: forming first and second p+ type regions inside said first n type layer, to respectively constitute a gate region of the BMFET and a horizontal isolation region of the integrated control circuit components; growing a first n type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming a first n+ type region inside said second p+ type region to provide a buried collector layer of a transistor of the integrated control circuit; growing a second n type epitaxial layer, extending over the whole area of the chip; forming first and second p+ type regions inside the second epitaxial layer, using oxidation, photomasking, implantation and subsequent diffusion techniques the first additional p+ type region being positioned immediately over the first p+ type region and joining them, and the second additional p+ type region extending from the surface of the second n type epitaxial layer inside said second epitaxial layer to join the second p+ type region; forming two second n+ type regions, one of said two second n+ type regions constituting a source of the BMFET transistor, and being located between two adjacent regions of said first additional p+ type regions inside which it extends, and the other of said two second n+ type regions constituting the collector sinker, and being positioned above said first n+ type region and joining it; forming above said first n+ type region, a base region and an emitter region of an NPN low voltage transistor, defining the contact areas of the semiconductor device by means of photomasking and etching techniques, and providing interconnection tracks among the components of the device by means of metallization and patterning techniques.

Claim 4

A method of manufacturing a semiconductor device comprising a power stage with vertical current flow, containing at least one BMFET transistor, and a control circuit, integrated in monolithic form in a single chip comprising the following steps: forming first and second p+ type regions inside said first n type layer, to respectively constitute a gate region of the BMFET and a horizontal isolation region of the integrated control circuit components; growing a first n type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming a first n+ type region inside said second p+ type region to provide a buried collector layer of a transistor of the integrated control circuit; growing a second n type epitaxial layer, extending over the whole area of the chip; forming first and second p+ type regions inside the second epitaxial layer, using oxidation, photomasking, implantation and subsequent diffusion techniques the first additional p+ type region being positioned immediately over the first p+ type region and joining them, and the second additional p+ type region extending from the surface of the second n type epitaxial layer inside said second epitaxial layer to join the second p+ type region; forming two second n+ type regions, one of said two second n+ type regions constituting a source of the BMFET transistor, and being located between two adjacent regions of said first additional p+ type regions inside which it extends, and the other of said two second n+ type regions constituting the collector sinker, and being positioned above said first n+ type region and joining it; forming above said first n+ type region, a base region and an emitter region of an NPN low voltage transistor, defining the contact areas of the semiconductor device by means of photomasking and etching techniques, and providing interconnection tracks among the components of the device by means of metallization and patterning techniques.

Claim 5

A method of manufacturing a semiconductor device comprising a power stage with vertical current flow, containing at least one BMFET transistor, and a control circuit, integrated in monolithic form in a single chip, comprising the following steps: growing a first n type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming first and second p+ type regions inside the n type first epitaxial layer to respectively constitute a gate region of the BMFET and a horizontal isolation region of the integrated control circuit components; forming first and second n+ type regions inside said second p+ type region to respectively provide a buried collector layer of a transistor of the integrated control circuit and a source region of the BMFET, the second n+ type region being located between two of said first p+ type regions which it joins; growing a second n type epitaxial layer, extending over the whole area of the chip; forming first and second additional p+ type regions inside the second epitaxial layer, using oxidation, photomasking, implantation and subsequent diffusion techniques, the second p+ type additional region being positioned immediately over the first p+ type regions and joining them, and the second p+ type additional region extending from the surface of the second n type epitaxial layer inside said second epitaxial layer to join the second p+ type region; forming two additional n+ type regions, one of said two additional regions being located immediately above the second n+ type region and joining it, and the other of said two additional regions constituting the collector sinker, and being positioned above the first n+ type region and joining it; forming above said first n+ type region, a base region and an emitter region of an NPN low voltage transistor, defining the contact areas of the semiconductor device by means of photomasking and etching techniques, and providing interconnection tracks among the components of the device by means of metallization and patterning techniques.

Claim 6

A method of manufacturing a semiconductor device comprising a power stage with vertical current flow, containing at least one BMFET transistor, and a control circuit, integrated in monolithic form in a single chip, comprising the following steps: growing a first n type epitaxial layer on a heavily doped n+ type substrate of monocrystalline silicon; forming first and second p+ type regions inside the n type first epitaxial layer to respectively constitute a gate region of the BMFET and a horizontal isolation region of the integrated control circuit components; forming first and second n+ type regions inside said second p+ type region to respectively provide a buried collector layer of a transistor of the integrated control circuit and a source region of the BMFET, the second n+ type region being located between two of said first p+ type regions which it joins; growing a second n type epitaxial layer, extending over the whole area of the chip; forming first and second additional p+ type regions inside the second epitaxial layer, using oxidation, photomasking, implantation and subsequent diffusion techniques, the second p+ type additional region being positioned immediately over the first p+ type regions and joining them, and the second p+ type additional region extending from the surface of the second n type epitaxial layer inside said second epitaxial layer to join the second p+ type region; forming two additional n+ type regions, one of said two additional regions being located immediately above the second n+ type region and joining it, and the other of said two additional regions constituting the collector sinker, and being positioned above the first n+ type region and joining it; forming above said first n+ type region, a base region and an emitter region of an NPN low voltage transistor, defining the contact areas of the semiconductor device by means of photomasking and etching techniques, and providing interconnection tracks among the components of the device by means of metallization and patterning techniques.