US5243216A
Expired / Lapsed
US
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Phototransistor
Assignee: Sanyo Electric Co Ltd
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Filing: 1992-02-20
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Granted: 1993-09-07
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Expires: 2012-02-20
Abstract
Abstract A phototransistor includes a monocrystalline semiconductor substrate of a first conductivity type, a crystalline semiconductor layer of a second conductivity type formed from a surface of the semiconductor substrate to a predetermined depth, a substantially intrinsic amorphous semiconductor layer formed on the crystalline semiconductor layer, and an amorphous semiconductor layer of the first conductivity type formed on the intrinsic amorphous semiconductor layer.
Inventors
- 👤 Shigeru Noguchi
- 👤 Hiroshi Iwata
- 👤 Keiichi Sano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:24
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
133 words
A phototransistor, comprising: a monocrystalline semiconductor substrate of a first conductivity type forming a collector of said phototransistor; a crystalline semiconductor layer of a second conductivity type forming a base formed in a surface of said semiconductor substrate to a predetermined depth; a substantially intrinsic amorphous semiconductor layer having a layer thickness within the range of 10Å to 300Å formed on said crystalline semiconductor layer for decreasing interface energy levels, whereby a disappearance of charge carriers is suppressed for an improved light sensitivity; an amorphous semiconductor layer of the first conductivity type forming an emitter capable of receiving light and formed on said substantially intrinsic amorphous semiconductor layer; and at least two terminals, one of which is connected to said collector and the other is connected to said emitter for driving said phototransistor.
Claim 2
Dependent Claim
133 words
A phototransistor, comprising: a monocrystalline semiconductor substrate of a first conductivity type forming a collector of said phototransistor; a crystalline semiconductor layer of a second conductivity type forming a base formed in a surface of said semiconductor substrate to a predetermined depth; a substantially intrinsic amorphous semiconductor layer having a layer thickness within the range of 10Å to 300Å formed on said crystalline semiconductor layer for decreasing interface energy levels, whereby a disappearance of charge carriers is suppressed for an improved light sensitivity; an amorphous semiconductor layer of the first conductivity type forming an emitter capable of receiving light and formed on said substantially intrinsic amorphous semiconductor layer; and at least two terminals, one of which is connected to said collector and the other is connected to said emitter for driving said phototransistor.
Claim 3
Dependent Claim
21 words
The phototransistor according to claim 1, wherein said substantially intrinsic amorphous semiconductor layer has a thickness within the range of 50Å-100Å.
Claim 4
Dependent Claim
34 words
The phototransistor according to claim 1, wherein a transparent electrode layer is formed on said amorphous semiconductor layer of the first conductivity type, said transparent electrode having connected thereto said other of said terminals.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-06 | 1997-03-08 | 1997-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-06 | 2001-03-08 | 2001-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-06 | 2005-03-08 | 2005-09-07 | $7700.00 | Window Closed / Lapsed |