US5066340A
Expired / Lapsed
US
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Photovoltaic device
Assignee: Sanyo Electric Co Ltd
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Filing: 1990-08-06
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Granted: 1991-11-19
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Expires: 2010-08-06
Abstract
Abstract A photovoltaic device has a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material, an amorphous layer of an opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer formed of substantially intrinsic microcrystalline silicon semiconductor material provided between the crystalline layer and the amorphous layer.
Inventors
- 👤 Masayuki Iwamoto
- 👤 Kouji Minami
- 👤 Toshihiko Yamaoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:19
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; H10F10/165; H10F10/166; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/164; H10F77/1642; H10F77/1645; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/545; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
53 words
A photovoltaic device comprising a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material; an amorphous layer of the opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer composed of substantially intrinsic microcrystalline silicon semiconductor material, provided between said crystalline layer and said amorphous layer.
Claim 2
Dependent Claim
53 words
A photovoltaic device comprising a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material; an amorphous layer of the opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer composed of substantially intrinsic microcrystalline silicon semiconductor material, provided between said crystalline layer and said amorphous layer.
Claim 3
Dependent Claim
34 words
The photovoltaic device according to claim 1, wherein the thickness of said crystalline layer is within the range of 1-500 μm, and the thickness of said amorphous layer is within the range of 20-5000Å.
Claim 4
Dependent Claim
19 words
The photovoltaic device according to claim 2, wherein the thickness of said microcrystalline layer is not more than 500Å.
Claim 5
Dependent Claim
20 words
The photovoltaic device according to claim 2, wherein the thickness of said amorphous layer is within the range of 20-300Å.
Claim 6
Dependent Claim
26 words
The photovoltaic device according to claim 1, wherein the diameter of silicon crystals of said crystals of said microcrystalline layer is in the range of 10-1000Å.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-18 | 1995-05-20 | 1995-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-18 | 1999-05-20 | 1999-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-18 | 2003-05-20 | 2003-11-19 | $7700.00 | Window Closed / Lapsed |