Photovoltaic device

Claim 2

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a heterojunction solar cell comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; an amorphous solar cell tandemly applied on said heterojunction solar cell in optical and electrical series therewith, and comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between said regions, and a p-n junction formed at the interface between said heterojunction solar cell and said amorphous solar cell.

Claim 3

The device according to claim 1, wherein said solar cells are placed from the light-receiving side in the order of decreasing width of the energy gap of said i-type region in said amorphous solar cell and said crystalline region in said heterojunction solar cell.

Claim 4

The device according to claim 1, wherein at least one of said amorphous or microcrystalline regions is deposited by the use of a low temperature process.

Claim 5

The device according to claim 1, wherein said crystalline semiconductor region in said heterojunction solar cell comprises a wafer.

Claim 6

The device according to claim 4, wherein said crystalline region has an irregular surface.

Claim 7

The device according to claim 1, wherein said crystalline semiconductor region in said heterojunction solar cell comprises a thin film deposited on a substrate of inorganic material or organic material.

Claim 8

The device according to claim 6, wherein said substrate has an irregular surface.

Claim 9

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a heterojunction solar cell comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; a plurality of tandemly arranged amorphous solar cells applied on said heterojunction solar cell in optical and electrical series therewith, and each comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between associated p-, i-, and n-type regions and forming a p-n junction between each adjacent pair of amorphous solar cells, and a p-n junction formed at the interface between said heterojunction solar cell and the amorphous solar cell applied thereon.

Claim 10

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a heterojunction solar cell comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; a plurality of tandemly arranged amorphous solar cells applied on said heterojunction solar cell in optical and electrical series therewith, and each comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between associated p-, i-, and n-type regions and forming a p-n junction between each adjacent pair of amorphous solar cells, and a p-n junction formed at the interface between said heterojunction solar cell and the amorphous solar cell applied thereon.

Claim 11

The device according to claim 8, wherein said solar cells are placed from the light-receiving side in the order of increasing width of the energy gap of said i-type regions in said amorphous solar cells and said crystalline region in said heterojunction solar cell.

Claim 12

The device according to claim 8, wherein at least one of said amorphous or microcrystalline semiconductor regions is formed by the use of a low temperature process.

Claim 13

The device according to claim 8, wherein said crystalline semiconductor region comprises a wafer.

Claim 14

The device according to claim 11, wherein said crystalline region has an irregular surface.

Claim 15

The device according to claim 8, wherein said crystalline semiconductor region comprises a thin film deposited on a substrate of inorganic material or organic material.

Claim 16

The device according to claim 13, wherein said substrate has an irregular surface.

Claim 17

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: two tandemly arranged heterojunction solar cells in optical and electrical series each comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions, an intervening amorphous or microcrystalline semiconductor region applied between an amorphous or microcrystalline region in one of said solar cells and a crystalline region in the other cell, the conductivity type of said intervening region being controlled to be of opposite type to that of said amorphous or microcrystalline semiconductor region in one of said solar cells but of the same type as that of the crystalline region in the other cell, and a p-n junction formed at the interface between said intervening region and said amorphous or microcrystalline region in one of said solar cells.

Claim 18

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: two tandemly arranged heterojunction solar cells in optical and electrical series each comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions, an intervening amorphous or microcrystalline semiconductor region applied between an amorphous or microcrystalline region in one of said solar cells and a crystalline region in the other cell, the conductivity type of said intervening region being controlled to be of opposite type to that of said amorphous or microcrystalline semiconductor region in one of said solar cells but of the same type as that of the crystalline region in the other cell, and a p-n junction formed at the interface between said intervening region and said amorphous or microcrystalline region in one of said solar cells.

Claim 19

The device according to claim 15, wherein said solar cells are placed in order of decreasing width of the energy gap of said crystalline regions in said heterojunction solar cells from the light-receiving side.

Claim 20

The device according to claim 15, wherein at least one of said amorphous or microcrystalline regions is deposited by using a low temperature process.

Claim 21

The device according to claim 15, wherein the crystalline semiconductor region situated at the farthest side from the light-receiving surface among the semiconductor regions of said device comprises a wafer.

Claim 22

The device according to claim 18, wherein said last mentioned crystalline region has an irregular surface.

Claim 23

The device according to claim 18, wherein said crystalline semiconductor region situated at the farthest side from the light-receiving surface among the semiconductor regions of said device comprises a thin film deposited on a substrate of inorganic material or organic material.

Claim 24

The device according to claim 20, wherein said substrate has an irregular surface.

Claim 25

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a plurality of tandemly arranged heterojunction solar cells in optical and electrical series, each comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; an intervening amorphous or microcrystalline semiconductor region applied between an amorphous or microcrystalline semiconductor region in one of said heterojunction solar cells and a crystalline region in the adjacent heterojunction solar cell, the conductivity type of said intervening region being controlled to be of the opposite type to that of said amorphous or microcrystalline semiconductor region in one of said heterojunction solar cells but of the same type as that of the crystalline semiconductor region in the adjacent cell; at least one amorphous solar cell tandemly arranged on one of said plurality of heterojunction solar cells in optical and electrical series therewith, and each comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between associated regions, and a p-n junction formed at the interface between said heterojunction solar cell and the amorphous solar cell applied thereon.

Claim 26

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a plurality of tandemly arranged heterojunction solar cells in optical and electrical series, each comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; an intervening amorphous or microcrystalline semiconductor region applied between an amorphous or microcrystalline semiconductor region in one of said heterojunction solar cells and a crystalline region in the adjacent heterojunction solar cell, the conductivity type of said intervening region being controlled to be of the opposite type to that of said amorphous or microcrystalline semiconductor region in one of said heterojunction solar cells but of the same type as that of the crystalline semiconductor region in the adjacent cell; at least one amorphous solar cell tandemly arranged on one of said plurality of heterojunction solar cells in optical and electrical series therewith, and each comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between associated regions, and a p-n junction formed at the interface between said heterojunction solar cell and the amorphous solar cell applied thereon.

Claim 27

The device according to claim 22, wherein said solar cells are placed from the light-receiving side in the order of decreasing width of the energy gap of said i-type regions in said amorphous solar cells and said crystalline regions in said heterojunction solar cells.

Claim 28

The device according to claim 22, wherein at least one of said amorphous or microcrystalline regions is deposited by the use of a low temperature process.

Claim 29

The device according to claim 22, wherein the crystalline semiconductor region in the heterojunction solar cell situated at the farthest side from the light-receiving side comprises a wafer.

Claim 30

The device according to claim 25, wherein said last mentioned crystalline region has an irregular surface.

Claim 31

The device according to claim 22, wherein said crystalline semiconductor region in the heterojunction solar cell situated at the farthest side from the lightreceiving side comprises a thin film deposited on a substrate of inorganic material or organic material.

Claim 32

The device according to claim 27, wherein said substrate has an irregular surface.

Claim 33

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a plurality of tandemly arranged heterojunction solar cells in optical and electrical series, each comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; an intervening amorphous or microcrystalline semiconductor region applied between an amorphous or microcrystalline region in one of said heterojunction solar cells and a crystalline region in the adjacent heterojunction solar cell, the conductivity type of said intervening region being controlled to be of the opposite type to that of said amorphous or microcrystalline semiconductor region in one of said heterojunction solar cells but of the same type as that of the crystalline semiconductor region in the adjacent cell; a plurality of amorphous solar cells tandemly arranged on said heterojunction solar cells in optical and electrical series therewith, and each comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between associated regions, and a p-n junction formed at the interface between one of said heterojunction solar cells and the amorphous solar cell applied thereon.

Claim 34

A photovoltaic device which converts solar energy to electric energy, comprising, in combination: a plurality of tandemly arranged heterojunction solar cells in optical and electrical series, each comprising a crystalline semiconductor region and an amorphous or microcrystalline semiconductor region applied on said crystalline region with a p-n junction formed between said regions; an intervening amorphous or microcrystalline semiconductor region applied between an amorphous or microcrystalline region in one of said heterojunction solar cells and a crystalline region in the adjacent heterojunction solar cell, the conductivity type of said intervening region being controlled to be of the opposite type to that of said amorphous or microcrystalline semiconductor region in one of said heterojunction solar cells but of the same type as that of the crystalline semiconductor region in the adjacent cell; a plurality of amorphous solar cells tandemly arranged on said heterojunction solar cells in optical and electrical series therewith, and each comprising a p-type region, an i-type region and an n-type region of amorphous or microcrystalline semiconductor material applied in seriatim layers with a p-i-n junction formed between associated regions, and a p-n junction formed at the interface between one of said heterojunction solar cells and the amorphous solar cell applied thereon.

Claim 35

The device according to claim 29, wherein said solar cells are placed from the light-receiving side in the order of decreasing width of the energy gap of said i-type regions in said amorphous solar cells and said crystalline regions in said heterojunction solar cells.

Claim 36

The device according to claim 29, wherein at least one of said amorphous or microcrystalline regions is deposited by the use of a low temperature process.

Claim 37

The device according to claim 29, wherein said crystalline semiconductor region in the heterojunction solar cell situated at the farthest side from the light-receiving side comprises a wafer.

Claim 38

The device according to claim 32, wherein said last mentioned crystalline region has an irregular surface.

Claim 39

The device according to claim 29, wherein the crystalline semiconductor region in the heterojunction solar cell situated at the farthest side from the lightreceiving side comprises a thin film deposited on a substrate of inorganic material or organic material.

Claim 40

The device according to claim 34, wherein said substrate has an irregular surface.