US5055141A
Expired / Lapsed
US
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Enhancement of short-circuit current by use of wide bandgap n-layers in p-i-n amorphous silicon photovoltaic cells
Assignee: BP Solar International LLC
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Filing: 1990-01-19
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Granted: 1991-10-08
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Expires: 2010-01-19
Abstract
Abstract A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure which includes first, second, and third n-layers successively formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.
Inventors
- 👤 Rajeewa R. Arya
- 👤 Anthony W. Catalano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:10
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1462; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/16
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
154 words
A photovoltaic cell, comprising: a transparent substrate; a transparent front conductive layer formed on said substrate; a p-type layer formed on said front conductive layer; an i-layer of amorphous silicon formed on said p-layer; an n-type sandwich structure of amorphous silicon formed on said i-layer, said n-type sandwich structure including first, second, and third n-layers successively formed on one another, said first n-layer being formed on said i-layer to form a rectifying junction therewith, said second n-layer being formed on said first n-layer, and said third n-layer being formed on said second n-layer, said second n-layer having an optical bandgap wider than respective optical bandgaps of said first and third n-type layers and said i-layer; said second n-layer having a thickness at least two times the thickness of each of said first and third n-layers; and a back contact layer of conductive material formed on said third n-layer to form an ohmic contact therewith.
Claim 2
Dependent Claim
154 words
A photovoltaic cell, comprising: a transparent substrate; a transparent front conductive layer formed on said substrate; a p-type layer formed on said front conductive layer; an i-layer of amorphous silicon formed on said p-layer; an n-type sandwich structure of amorphous silicon formed on said i-layer, said n-type sandwich structure including first, second, and third n-layers successively formed on one another, said first n-layer being formed on said i-layer to form a rectifying junction therewith, said second n-layer being formed on said first n-layer, and said third n-layer being formed on said second n-layer, said second n-layer having an optical bandgap wider than respective optical bandgaps of said first and third n-type layers and said i-layer; said second n-layer having a thickness at least two times the thickness of each of said first and third n-layers; and a back contact layer of conductive material formed on said third n-layer to form an ohmic contact therewith.
Claim 3
Dependent Claim
20 words
A photovoltaic cell as recited in claim 1 wherein said first and third n-layers have substantially the same optical bandgap.
Claim 4
Dependent Claim
27 words
A photovoltaic cell as recited in claim 1, wherein the optical bandgap of said first and third n-layers is in the range of 1.68 to 1.70 eV.
Claim 5
Dependent Claim
25 words
A photovoltaic cell as recited in claim 1, wherein the optical bandgap of said second n-layer is in the range of 1.7 to 2.0 eV.
Claim 6
Dependent Claim
19 words
A photovoltaic cell as recited in claim 4, wherein the optical bandgap of said second layer is 1.9 eV.
Claim 7
Dependent Claim
25 words
A photovoltaic cell as recited in claim 1, wherein said first and third n-layers are each on the order of 50 to 100 Å thick.
Claim 8
Dependent Claim
20 words
A photovoltaic cell as recited in claim 6, wherein said first and third n-layers are each about 100 Å thick.
Claim 9
Dependent Claim
17 words
A photovoltaic cell as recited in claim 7, wherein said second n-layer is about 800 Å thick.
Claim 10
Dependent Claim
22 words
A photovoltaic cell as recited in claim 7, wherein said second n-layer is on the order of 200 to 400 Å thick.
Claim 11
Dependent Claim
31 words
A photovoltaic cell as recited in claim 1, wherein said first and third n-layers have a thickness on the other of 25 to 50 Å and are comprised of microcrystalline silicon.
Claim 12
Dependent Claim
31 words
A photovoltaic cell as recited in claim 1, wherein said first and third n-layers have a thickness on the order of 50 to 100 Å and are comprised of amorphous silicon.
Claim 13
Independent Claim
181 words
A method for making a photovoltaic cell on a transparent substrate, comprising: (a) forming a transparent front conductive layer on the transparent substrate; (b) forming a p-type layer on said front conductive layer; (c) forming an i-layer of amorphous silicon having a first optical bandgap on said p-layer; (d) forming an n-type sandwich structure of amorphous silicon no said i-layer by: (i) forming a first n-layer on said i-layer to form a rectifying junction therewith, said first n-layer having a second optical bandgap; (ii) forming a second n-layer on said first n-layer, said second n-layer having a third optical bandgap wider than said first and second optical bandgaps, said second n-layer having a thickness at least two times the thickness of said first n-layer; and (iii) forming a third n-layer on said second n-layer, said third n-layer having a fourth optical bandgap less than said third optical bandgap and a thickness no more than half the thickness of said second n-layer; and (e) forming a back contact layer of conductive material on said third n-layer to form an ohmic contact therewith.
Claim 14
Independent Claim
181 words
A method for making a photovoltaic cell on a transparent substrate, comprising: (a) forming a transparent front conductive layer on the transparent substrate; (b) forming a p-type layer on said front conductive layer; (c) forming an i-layer of amorphous silicon having a first optical bandgap on said p-layer; (d) forming an n-type sandwich structure of amorphous silicon no said i-layer by: (i) forming a first n-layer on said i-layer to form a rectifying junction therewith, said first n-layer having a second optical bandgap; (ii) forming a second n-layer on said first n-layer, said second n-layer having a third optical bandgap wider than said first and second optical bandgaps, said second n-layer having a thickness at least two times the thickness of said first n-layer; and (iii) forming a third n-layer on said second n-layer, said third n-layer having a fourth optical bandgap less than said third optical bandgap and a thickness no more than half the thickness of said second n-layer; and (e) forming a back contact layer of conductive material on said third n-layer to form an ohmic contact therewith.
Claim 15
Dependent Claim
172 words
A photovoltaic cell, comprising: a transparent substrate; a transparent front conductive layer formed on said substrate; a p-type layer formed on said front conductive layer; an i-layer of amorphous silicon formed on said p-layer; an n-type sandwich structure formed on said i-layer, said n-type sandwich structure including first, second, and third n-layers successively formed on one another, said first n-layer being formed on said i-layer to form a rectifying junction therewith, said second n-layer being formed on said first n-layer, and said third n-layer being formed on said second n-layer, said second n-layer having an optical bandgap wider than respective optical bandgaps of said first and third n-type layers and said i-layer; said first and third n-layers each comprised of doped a-Si:H and having a thickness on the order of 50 to 100 Å; said second n-layer comprised of doped a-SiC:H and having a thickness on the order of 200 to 400 Å; and a back contact layer of conductive material formed on said third n-layer to form an ohmic contact therewith.
Claim 16
Dependent Claim
172 words
A photovoltaic cell, comprising: a transparent substrate; a transparent front conductive layer formed on said substrate; a p-type layer formed on said front conductive layer; an i-layer of amorphous silicon formed on said p-layer; an n-type sandwich structure formed on said i-layer, said n-type sandwich structure including first, second, and third n-layers successively formed on one another, said first n-layer being formed on said i-layer to form a rectifying junction therewith, said second n-layer being formed on said first n-layer, and said third n-layer being formed on said second n-layer, said second n-layer having an optical bandgap wider than respective optical bandgaps of said first and third n-type layers and said i-layer; said first and third n-layers each comprised of doped a-Si:H and having a thickness on the order of 50 to 100 Å; said second n-layer comprised of doped a-SiC:H and having a thickness on the order of 200 to 400 Å; and a back contact layer of conductive material formed on said third n-layer to form an ohmic contact therewith.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |