Photovoltaic element

Abstract

Abstract PURPOSE:To heighten the energy conversion efficiency by adding an N-type amorphous Si layer to an amorphous Si solar cell composing of p-i-n structure wherein the output voltage is raised. CONSTITUTION:A clear electrode film 12 is adhered by successively stacking n-i-p type and additional N-type amorphous Si layers 8-11 on a metal substrate 7. The Si layers 8-11 are obtained by glow discharge decomposition method and the thickness of each film is as follows: The layer 8 is around 20-500Angstrom . The layer 9 is around 3,000-20,000Angstrom . The layer 10 is around 50-300Angstrom . The layer 11 is around 200-500Angstrom . This structure remarkably improve various characteristics as photovoltaic element.

Inventors

• 👤 Yoshihiro Hamakawa
• 👤 Hiroaki Okamoto
• 👤 Yoshiteru Nitsuta
• 👤 Nobuhiko Fujita

Bibliographic Details