US4718947A
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Superlattice doped layers for amorphous silicon photovoltaic cells
Assignee: BP Solar International LLC
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Filing: 1986-04-17
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Granted: 1988-01-12
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Expires: 2006-04-17
Abstract
Abstract Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.
Inventors
- 👤 Rajeewa R. Arya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:27
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1462; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/16
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
127 words
A photovoltaic cell, comprising: a. a transparent superstrate; b. a layer of transparent conductive oxide formed on said superstrate; c. a superlattice p-layer of amorphous silicon carbide formed on said conductive oxide layer, said p-layer including a plurality of first and second lattices alternatingly formed on one another, each of said first and second lattices having a thickness of approximately 12-30 Å, each of said first lattices having a first optical bandgap greater than or equal to about 2.25 eV, and each said second lattices having a second optical bandgap of about 1.7-2.0 eV. d. an i-layer of amorphous silicon formed on said p-layer; e. an n-layer of amorphous silicon formed on said i-layer; and f. a back contact layer of conductive material formed on said n-layer.
Claim 2
Dependent Claim
127 words
A photovoltaic cell, comprising: a. a transparent superstrate; b. a layer of transparent conductive oxide formed on said superstrate; c. a superlattice p-layer of amorphous silicon carbide formed on said conductive oxide layer, said p-layer including a plurality of first and second lattices alternatingly formed on one another, each of said first and second lattices having a thickness of approximately 12-30 Å, each of said first lattices having a first optical bandgap greater than or equal to about 2.25 eV, and each said second lattices having a second optical bandgap of about 1.7-2.0 eV. d. an i-layer of amorphous silicon formed on said p-layer; e. an n-layer of amorphous silicon formed on said i-layer; and f. a back contact layer of conductive material formed on said n-layer.
Claim 3
Dependent Claim
29 words
The photovoltaic all of claim 1, wherein said first optical bandgap is greater than or equal to about 2.4 eV and said second optical bandgap is about 2.0 eV.
Claim 4
Dependent Claim
12 words
The photovoltaic cell of claim 1, wherein said p-layer includes 6-10 lattices.
Claim 5
Dependent Claim
17 words
The photovoltaic cell of claim 1, wherein said p-layer includes 4 first lattices and 4 second lattices.
Claim 6
Dependent Claim
17 words
The photovoltaic cell of claim 1, wherein the total thickness of said p-layer is about 100-150 Å.
Claim 7
Dependent Claim
17 words
The photovoltaic cell of claim 1, wherein said first and second lattices both contain a p-type dopant.
Claim 8
Dependent Claim
12 words
The photovoltaic cell of claim 6, wherein said p-type dopant includes boron.
Claim 9
Dependent Claim
20 words
The photovoltaic cell of claim 1, wherein said first lattice is undoped and said second lattice contains a p-type dopant.
Claim 10
Dependent Claim
12 words
The photovoltaic cell of claim 8, wherein said p-type dopant includes boron.
Claim 11
Dependent Claim
186 words
A photovoltaic cell, comprising: a. a transparent superstrate; b. a layer of transparent conductive oxide formed on said superstrate; c. a superlattice p-layer of amorphous silicon carbide formed on said conductive oxide layer, said p-layer including a plurality of first and second lattices alternatingly formed on one another, each of said first and second lattices having a thickness of approximately 12-30 Å, each said first lattices having a first optical bandgap, and each said second lattices having a second optical bandgap different from said first optical bandgap; d. an i-layer of amorphous silicon formed on said p-layer; e. a superlattice n-layer of amorphous silicon formed on said i-layer, said n-layer including a plurality of third and fourth lattices alternatingly formed on one another, each of said third and fourth lattices having a thickness of approximately 10-40 Å, each of said third lattices having a third optical bandgap of about 1.9-2.1 eV, and each of said fourth lattices having a fourth optical bandgap less than said third optical bandgap and of about 1.7-1.9 eV; and f. a back contact layer of conductive material formed on said n-layer.
Claim 12
Dependent Claim
186 words
A photovoltaic cell, comprising: a. a transparent superstrate; b. a layer of transparent conductive oxide formed on said superstrate; c. a superlattice p-layer of amorphous silicon carbide formed on said conductive oxide layer, said p-layer including a plurality of first and second lattices alternatingly formed on one another, each of said first and second lattices having a thickness of approximately 12-30 Å, each said first lattices having a first optical bandgap, and each said second lattices having a second optical bandgap different from said first optical bandgap; d. an i-layer of amorphous silicon formed on said p-layer; e. a superlattice n-layer of amorphous silicon formed on said i-layer, said n-layer including a plurality of third and fourth lattices alternatingly formed on one another, each of said third and fourth lattices having a thickness of approximately 10-40 Å, each of said third lattices having a third optical bandgap of about 1.9-2.1 eV, and each of said fourth lattices having a fourth optical bandgap less than said third optical bandgap and of about 1.7-1.9 eV; and f. a back contact layer of conductive material formed on said n-layer.
Claim 13
Dependent Claim
15 words
The photovoltaic cell of claim 10, wherein said third lattice is of amorphous silicon carbide.
Claim 14
Dependent Claim
24 words
The photovoltaic cell of claim 11, wherein said fourth lattice is of amorphous silicon carbide having a lower carbon concentration than said third lattice.
Claim 15
Dependent Claim
12 words
The photovoltaic cell of claim 10, wherein said n-layer includes 8-20 lattices.
Claim 16
Dependent Claim
17 words
The photovoltaic cell of claim 10, wherein said n-layer includes eight third lattices and eight fourth lattices.
Claim 17
Dependent Claim
17 words
The photovoltaic cell of claim 10, wherein the total thickness of said n-layer is about 200-500 Å.
Claim 18
Dependent Claim
17 words
The photovoltaic cell of claim 10, wherein said third and fourth lattices both contain an n-type dopant.
Claim 19
Dependent Claim
12 words
The photovoltaic cell of claim 16, wherein said n-type dopant includes phosphorous.
Claim 20
Dependent Claim
20 words
The photovoltaic cell of claim 10, wherein said third lattice contains an n-type dopant and said fourth lattice is undoped.
Claim 21
Dependent Claim
12 words
The photovoltaic cell of claim 18, wherein said n-type dopant includes phosphorous.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-01-11 | 1991-07-13 | 1992-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-11 | 1995-07-13 | 1996-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-11 | 1999-07-13 | 2000-01-12 | $7700.00 | Window Closed / Lapsed |