Integrated VLSI radiation/particle detector with biased pin diodes

Claim 2

A structure for an integrated detector for detection of radiation of ionizing particles, X-rays and light, the integrated detector being integrated on a substrate of a first conductivity type conductor with a front side surface and back side surface, said radiation impinging on said structure, said structure comprising: one or more PIN diodes with each of said PIN diodes having a junction near said back side surface of said substrate created by a diffusion of second conductivity type semiconductor opposite to said first conductivity type semiconductor of said substrate, one or more collection electrodes on said front side surface for collecting the charge generated by said radiation impinging on detector, means for causing charge generated by said radiation to focus on said collection electrodes, at least one electrode on said back side surface for contacting said diffusion creating said junction of said PIN diodes, wherein each of said electrodes associates with one of said PIN diodes, and readout circuitry associated with said collection electrodes on said front side of said substrate, peripheral regions containing extra readout circuitry and control circuitry for controlling said readout circuitry, and wherein said peripheral regions include dummy PIN diodes having grounded collection electrodes on said front side surface.

Claim 3

A structure for an integrated detector for detection of ionizing particles, or radiation such as X-rays and light, the integrated detector being integrated on a fully depletable substrate of a first conductivity semiconductor type with a front side surface and back side surface, said structure comprising: a plurality of PIN diodes wherein each of said PIN diodes has a junction created by a diffusion of second conductivity type semiconductor opposite to said first conductivity type semiconductor of said substrate, a plurality of collection electrodes for collecting the charge generated by said radiation on the detector, wherein said each one of said PIN diodes is associated with one or more of said collection electrodes, a plurality of contact electrodes for contacting all of said diffusions creating the junctions of said PIN diodes, wherein each one of said contact electrodes is associated with one of said PIN diodes, readout circuitry associated individually with said collection electrodes, one or more wells, which are of a second conductivity type semiconductor opposite to said first conductivity type semiconductor of said substrate for containing said readout circuitry, and said wells being arranged in such a way that said readout circuitry connects to all of said collection electrodes and yet said wells are separated from junctions of said PIN diodes.

Claim 4

A structure for an integrated detector for detection of ionizing particles, or radiation such as X-rays and light, the integrated detector being integrated on a fully depletable substrate of a first conductivity semiconductor type with a front side surface and back side surface, said structure comprising: a plurality of PIN diodes wherein each of said PIN diodes has a junction created by a diffusion of second conductivity type semiconductor opposite to said first conductivity type semiconductor of said substrate, a plurality of collection electrodes for collecting the charge generated by said radiation on the detector, wherein said each one of said PIN diodes is associated with one or more of said collection electrodes, a plurality of contact electrodes for contacting all of said diffusions creating the junctions of said PIN diodes, wherein each one of said contact electrodes is associated with one of said PIN diodes, readout circuitry associated individually with said collection electrodes, one or more wells, which are of a second conductivity type semiconductor opposite to said first conductivity type semiconductor of said substrate for containing said readout circuitry, and said wells being arranged in such a way that said readout circuitry connects to all of said collection electrodes and yet said wells are separated from junctions of said PIN diodes.

Claim 5

A structure for an integrated detector for separating and differentiating two types of ionizing radiation of significantly different penetration depths in the detector, and for differentiating two types of radiation which generate a significantly different amount of charge, said structure comprising: a substrate of first conductivity type semiconductor, said substrate having a front side surface and a back side surface, an epi layer on said front surface of said substrate, said epi layer also comprising first conductivity type semiconductor and defining an interface between the substrate and said epi layer, a plurality of collection electrodes of first conductivity type semiconductor and a plurality of collection electrodes of second type semiconductor at a front side surface of said epi layer, a plurality of separate regions of second conductivity type semiconductor on said interface between the substrate and said epi layer to form junctions between said first type semiconductor and second type semiconductor, wherein said collection electrodes are arranged such that area which does not contain said collection electrodes exists for receiving the two types of radiation.

Claim 6

A structure for an integrated detector for separating and differentiating two types of ionizing radiation of significantly different penetration depths in the detector, and for differentiating two types of radiation which generate a significantly different amount of charge, said structure comprising: a substrate of first conductivity type semiconductor, said substrate having a front side surface and a back side surface, an epi layer on said front surface of said substrate, said epi layer also comprising first conductivity type semiconductor and defining an interface between the substrate and said epi layer, a plurality of collection electrodes of first conductivity type semiconductor and a plurality of collection electrodes of second type semiconductor at a front side surface of said epi layer, a plurality of separate regions of second conductivity type semiconductor on said interface between the substrate and said epi layer to form junctions between said first type semiconductor and second type semiconductor, wherein said collection electrodes are arranged such that area which does not contain said collection electrodes exists for receiving the two types of radiation.

Claim 7

A structure for an integrated detector for separating and differentiating two types of particles or electromagnetic radiation of significantly different penetration depths, and for differentiating two types of radiation which generate a significantly different amount of charge, said structure comprising: a substrate of first conductivity type semiconductor, said substrate having a front side surface and a back side surface, an epi layer on said front surface of said substrate, said epi layer comprising a first conductivity type semiconductor wherein said epi layer creates an interface between the substrate and said epi layer, a plurality of collection electrodes of first conductivity type semiconductor and a plurality of collection electrodes of second conductivity type semiconductor at a front side surface of said epi layer, wherein said plurality of collection electrodes receive the two types of radiation, a region of second conductivity type semiconductor on said interface between the substrate and said epi layer to form junctions between said first conductivity type semiconductor and second conductivity type semiconductor, and wherein said collection electrodes are arranged such that area which does not contain said collection electrodes exists and is configured so that penetrating radiation can be detected even if it traverses either collection electrode upon penetration.

Claim 8

A structure for an integrated detector for separating and differentiating two types of particles or electromagnetic radiation of significantly different penetration depths, and for differentiating two types of radiation which generate a significantly different amount of charge, said structure comprising: a substrate of first conductivity type semiconductor, said substrate having a front side surface and a back side surface, an epi layer on said front surface of said substrate, said epi layer comprising a first conductivity type semiconductor wherein said epi layer creates an interface between the substrate and said epi layer, a plurality of collection electrodes of first conductivity type semiconductor and a plurality of collection electrodes of second conductivity type semiconductor at a front side surface of said epi layer, wherein said plurality of collection electrodes receive the two types of radiation, a region of second conductivity type semiconductor on said interface between the substrate and said epi layer to form junctions between said first conductivity type semiconductor and second conductivity type semiconductor, and wherein said collection electrodes are arranged such that area which does not contain said collection electrodes exists and is configured so that penetrating radiation can be detected even if it traverses either collection electrode upon penetration.

Claim 9

A structure for an integrated detector for separating and differentiating two types of ionizing radiation of significantly different penetration depths, and for differentiating two types of radiation which generate significantly different amounts of charge, said structure comprising: a substrate of first conductivity type semiconductor, said substrate having a front side surface and a back side surface, an epi layer on said front surface of said substrate, said epi layer comprising second conductivity type semiconductor opposite to first conductivity type semiconductor of said substrate, said epi layer creating an interface between the substrate and said epi layer, a plurality of collection electrodes of first conductivity type semiconductor and a plurality of collection electrodes of second conductivity type semiconductor at a front side surface of said epi layer, wherein said collection electrodes are arranged such that an empty area which does not contain said collection electrodes provides flowlines within said epi layer and therefore means for diverting the two types of radiation, and a fieldplate, transparent to light, covering said empty area.

Claim 10

A structure for an integrated detector for separating and differentiating two types of ionizing radiation of significantly different penetration depths, and for differentiating two types of radiation which generate significantly different amounts of charge, said structure comprising: a substrate of first conductivity type semiconductor, said substrate having a front side surface and a back side surface, an epi layer on said front surface of said substrate, said epi layer comprising second conductivity type semiconductor opposite to first conductivity type semiconductor of said substrate, said epi layer creating an interface between the substrate and said epi layer, a plurality of collection electrodes of first conductivity type semiconductor and a plurality of collection electrodes of second conductivity type semiconductor at a front side surface of said epi layer, wherein said collection electrodes are arranged such that an empty area which does not contain said collection electrodes provides flowlines within said epi layer and therefore means for diverting the two types of radiation, and a fieldplate, transparent to light, covering said empty area.

Claim 11

A structure of claims 3 or 4, further comprising: a fieldplate, transparent to light, covering said empty area.