US4460912A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensors
Assignee: Sony Corp
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Filing: 1982-07-27
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Granted: 1984-07-17
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Expires: 2002-07-27
Abstract
Abstract A solid state image sensor of the interline transfer type comprises a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, for example, P - type, a horizontal charge transfer portion and an output portion, wherein a semiconductor layer of a second conductive type, for example, N - type with the low impurity density is provided on the semiconductor substrate and a plurality of P - type semiconductor regions with the high impurity density, each of which contains a vertical charge transfer portion for vertically transferring a signal charge therein and an overflow drain for draining off a superfluous charge, both of which are provided in the form of N - type semiconductor areas apart from each other, and a plurality of photo-sensing areas for storing the signal charge produced in response to the light from the outside formed between each adjacent two of the P - type semiconductor regions are provided on the semiconductor layer of the N - type, so that no needless charge flows into the vertical charge transfer portion to be undesirably transferred therein.
Inventors
- 👤 Kaneyoshi Takeshita
- 👤 Masaharu Hamasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:10
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10F39/153
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
196 words
A solid state image sensor comprising: a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, wherein a semiconductor layer of a second conductive type with low impurity density, a plurality of semiconductor regions of the first conductive type formed in said semiconductor layer of the second conductive type and a plurality of photo-sensing areas for storing a signal charge produced in response to the light from the outside formed between each adjacent two of said semiconductor regions of the first conductive type are provided, each of said semiconductor regions of the first conductive type containing a vertical charge transfer portion for vertically transferring signal charge transferred from said photo-sensing area and an overflow drain for draining off a superfluous charge from said photo-sensing area, both of which are provided in the form of semiconductor areas of the second conductive type apart from each other therein; a horizontal charge transfer portion for horizontally transferring the signal charge transferred from said sensing and vertical transfer portion; and an output portion for taking out an image pickup signal output in response to the signal charge transferred from said horizontal charge transfer portion.
Claim 2
Dependent Claim
196 words
A solid state image sensor comprising: a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, wherein a semiconductor layer of a second conductive type with low impurity density, a plurality of semiconductor regions of the first conductive type formed in said semiconductor layer of the second conductive type and a plurality of photo-sensing areas for storing a signal charge produced in response to the light from the outside formed between each adjacent two of said semiconductor regions of the first conductive type are provided, each of said semiconductor regions of the first conductive type containing a vertical charge transfer portion for vertically transferring signal charge transferred from said photo-sensing area and an overflow drain for draining off a superfluous charge from said photo-sensing area, both of which are provided in the form of semiconductor areas of the second conductive type apart from each other therein; a horizontal charge transfer portion for horizontally transferring the signal charge transferred from said sensing and vertical transfer portion; and an output portion for taking out an image pickup signal output in response to the signal charge transferred from said horizontal charge transfer portion.
Claim 3
Dependent Claim
142 words
A solid state image sensor comprising a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type and low impurity concentration formed in said substrate, a second plurality of separated semiconductor regions of said first conductivity type formed in said first semiconductor region, a third plurality of photo-sensing areas of said second conductivity type between said second plurality of semiconductor regions, a fourth plurality of vertical charge transfer regions of said second conductivity type with one such region in each of said second semiconductor regions, a fifth plurality of overflow drain regions of said second conductivity type with one such region in each of said second semiconductor regions and transfer gate electrodes, overflow drain electrodes and vertical charge transfer electrodes respectively formed on said second plurality of semiconductor regions and over said vertical charge transfer regions.
Claim 4
Dependent Claim
142 words
A solid state image sensor comprising a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type and low impurity concentration formed in said substrate, a second plurality of separated semiconductor regions of said first conductivity type formed in said first semiconductor region, a third plurality of photo-sensing areas of said second conductivity type between said second plurality of semiconductor regions, a fourth plurality of vertical charge transfer regions of said second conductivity type with one such region in each of said second semiconductor regions, a fifth plurality of overflow drain regions of said second conductivity type with one such region in each of said second semiconductor regions and transfer gate electrodes, overflow drain electrodes and vertical charge transfer electrodes respectively formed on said second plurality of semiconductor regions and over said vertical charge transfer regions.
Claim 5
Dependent Claim
28 words
A solid state image sensor according to claim 2 wherein an insulating layer is formed under said transfer gate electrodes, overflow drain electrodes and said charge transfer electrodes.
Claim 6
Dependent Claim
27 words
A solid state image sensor according to claim 3, wherein said transfer gate electrode and said overflow gate electrode are separated by said vertical charge transfer electrode.
Claim 7
Dependent Claim
37 words
A solid state image sensor according to claim 4, including a channel stopper portion of each of said second plurality of semiconductor regions formed between said fourth vertical charge transfer regions and said fifth overflow drain regions.
References Cited (Backward Citations)
US3896474A
Cited
US4389661A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-17 | 1988-01-16 | 1988-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-17 | 1992-01-16 | 1992-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-17 | 1996-01-16 | 1996-07-17 | $7700.00 | Window Closed / Lapsed |