US4183034A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pin photodiode and integrated circuit including same
Assignee: International Business Machines Corp
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Filing: 1978-04-17
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Granted: 1980-01-08
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Expires: 1998-04-17
Abstract
Abstract A PIN photodiode structure uses direct side entry into the I region, thus permitting the use of thicker P and N regions with a comparatively thin I region without sacrificing speed and results in more constant spatial distribution upon carrier generation and longer wave length devices with conventional speeds or smaller devices at faster speeds, and may be integrated on the same chip with associated circuits.
Inventors
- 👤 Richard G. Burke
- 👤 James S. Kolodzey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:08
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4202; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
151 words
A PIN photodiode comprising: a semiconductor chip having at least two surfaces and edge surfaces extending therebetween, said chip having a P region extending from one surface inwardly, an N region extending from said other surface inwardly and a substantially uniform thin I region, having a substantial extent in at least one direction so as to provide increased responsivity to a broad range of wave lengths of photo energy, separating said P and N regions and extending to at least one of said edge surfaces whereby photoenergy may enter the I region along said at least one direction directly without passing through the other regions, an anode electrode in contact with said P region surface, and a cathode electrode in contact with said N region surface said P and N regions in a direction normal to said at least two surfaces are substantial in extent and greater than the I region.
Claim 2
Dependent Claim
151 words
A PIN photodiode comprising: a semiconductor chip having at least two surfaces and edge surfaces extending therebetween, said chip having a P region extending from one surface inwardly, an N region extending from said other surface inwardly and a substantially uniform thin I region, having a substantial extent in at least one direction so as to provide increased responsivity to a broad range of wave lengths of photo energy, separating said P and N regions and extending to at least one of said edge surfaces whereby photoenergy may enter the I region along said at least one direction directly without passing through the other regions, an anode electrode in contact with said P region surface, and a cathode electrode in contact with said N region surface said P and N regions in a direction normal to said at least two surfaces are substantial in extent and greater than the I region.
Claim 3
Dependent Claim
51 words
A PIN photodiode as set forth in claim 1 wherein said I region extends in the said at least two surface direction a substantial distance for absorbing the longer light wave lengths and extends in the direction perpendicular to said surfaces a distance to enhance the speed of the PIN photodiode.
Claim 4
Dependent Claim
28 words
A PIN photodiode as set forth in claim 1 further including a substrate for supporting said chip and means for admitting photo energy directly to said I region.
Claim 5
Dependent Claim
35 words
A PIN photodiode as set forth in claim 3 wherein said means for admitting photo energy directly to said I region is a light conducting fiber adapted for connection to a source of photo energy.
Claim 6
Dependent Claim
22 words
A PIN photodiode as set forth in any one of claims 1, 2-4 in which said semiconductor chip is made of silicon.
Claim 7
Dependent Claim
151 words
A monolithic chip including a PIN photodiode and circuit means operatively interconnected therewith comprising: a semiconductor chip having at least two bounded surfaces and edge surfaces extending therebetween, said chip having a P region extending from a portion of one surface inwardly, an N region extending from a portion of the said other surface inwardly, an I region of substantially uniform thickness separating said P and N regions and extending to at least one of said edge surfaces whereby photo energy may enter the I region directly without passing through the other regions, and at least one other device formed into said chip for operative operation with said PIN photodiode, and conductive means interconnecting said PIN diode and said at least one other device formed into said chip said P and N regions in a direction normal to said bounded surfaces are substantial in extent and greater than the I region.
Claim 8
Dependent Claim
151 words
A monolithic chip including a PIN photodiode and circuit means operatively interconnected therewith comprising: a semiconductor chip having at least two bounded surfaces and edge surfaces extending therebetween, said chip having a P region extending from a portion of one surface inwardly, an N region extending from a portion of the said other surface inwardly, an I region of substantially uniform thickness separating said P and N regions and extending to at least one of said edge surfaces whereby photo energy may enter the I region directly without passing through the other regions, and at least one other device formed into said chip for operative operation with said PIN photodiode, and conductive means interconnecting said PIN diode and said at least one other device formed into said chip said P and N regions in a direction normal to said bounded surfaces are substantial in extent and greater than the I region.
Claim 9
Dependent Claim
48 words
A monolithic chip as set forth in claim 6 wherein said I region extends in the bounded surfaces direction a substantial distance for absorbing the longer light wave lengths and extends in the direction perpendicular to said surfaces a distance to enhance the speed of the PIN photodiode.
Claim 10
Dependent Claim
28 words
A monolithic chip as set forth in claim 6 further including a substrate for supporting said chip and means for admitting photo energy directly to said I region.
Claim 11
Dependent Claim
35 words
A monolithic chip as set forth in claim 8 wherein said means for admitting photo energy directly to said I region is a light conducting fiber adapted for connection to a source of photo energy.
Claim 12
Dependent Claim
22 words
A monolithic chip as set forth in any one of claims 6, 7-9 in which said semiconductor chip is made of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-07 | 1983-07-09 | 1984-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-07 | 1987-07-09 | 1988-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-07 | 1991-07-09 | 1992-01-08 | $7700.00 | Window Closed / Lapsed |