US5231050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of laser connection of a conductor to a doped region of the substrate of an integrated circuit
Assignee: Bull SAS
•
Filing: 1990-04-10
•
Granted: 1993-07-27
•
Expires: 2010-04-10
Abstract
Abstract The conductor 15 to be connected to the doped region 12 of the substrate 11 has an edge 15a at which the laser beam 20 is aimed, regulated such as to definitively create a zone of low electrical resistance 19 in the dielectric layer 13 that separates the conductor from the doped region. The invention is particularly applicable to programming by laser of read only memories and defective integrated circuits with a view to correcting them.
Inventors
- 👤 Alain Boudou
- 👤 Marie-Francoise Bonnal
- 👤 Marine Rouillon-Martin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:06
CPC Classifications
H; H10; H10W; H10W99/00; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/068; H10W20/40; H10W20/49; H10W20/491; H10W20/492; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
134 words
A method of electrical connection by laser of a conductor (15) to a doped region (12) of a substrate (11) of an integrated circuit (10) by the intermediary of a thin dielectric layer (13), comprising disposing one edge (15a) of the conductor above the doped region, causing a laser beam (20) to straddle (21, 21b) the edge of the conductor adjacent the doped region, and regulating the power (P), the diameter (D), the number (N) and duration (T) of the pulses of the laser beam so as to definitively create defects in the dielectric layer without substantially changing a structure of said conductor and of said doped region of said substrate exposed to said laser beam, thereby lowering an electrical resistance of said dielectric layer material in a zone exposed to said laser beam.
Claim 2
Independent Claim
134 words
A method of electrical connection by laser of a conductor (15) to a doped region (12) of a substrate (11) of an integrated circuit (10) by the intermediary of a thin dielectric layer (13), comprising disposing one edge (15a) of the conductor above the doped region, causing a laser beam (20) to straddle (21, 21b) the edge of the conductor adjacent the doped region, and regulating the power (P), the diameter (D), the number (N) and duration (T) of the pulses of the laser beam so as to definitively create defects in the dielectric layer without substantially changing a structure of said conductor and of said doped region of said substrate exposed to said laser beam, thereby lowering an electrical resistance of said dielectric layer material in a zone exposed to said laser beam.
Claim 3
Dependent Claim
13 words
A method as defined by claim 1, wherein the conductor is of metal.
Claim 4
Dependent Claim
34 words
A method as defined by claim 1, wherein the doped region of the substrate has dopants of one conductivity type and the conductor includes a semiconductor material having dopants of said one conductivity type.
Claim 5
Dependent Claim
16 words
A method as defined by claim 3, wherein said semiconductor material is made of polycrystalline silicon.
Claim 6
Dependent Claim
19 words
A method as defined by claim 3, wherein said semiconductor material is made of metallic material and polycrystalline silicon.
Claim 7
Dependent Claim
22 words
A method as defined by claim 1, comprising the further step of covering the substrate with at least one additional conductor layer.
Claim 8
Dependent Claim
39 words
A method as defined in claim 6 wherein the step of covering the substrate with said at least one additional conductor layer is performed prior to said step of electrically connecting by laser said conductor to said doped region.
Claim 9
Dependent Claim
21 words
A method as defined by claim 1 comprising the further step of covering the substrate with at least one insulating layer.
Claim 10
Dependent Claim
38 words
A method as defined in claim 8 wherein the step of covering the substrate with said at least one insulating layer is performed prior to said step of electrically connecting by laser said conductor to said doped region.
Claim 11
Dependent Claim
34 words
A method as defined in claim 1 comprising the further steps of covering the conductor with at least one insulating layer, and subsequently depositing at least one additional conductor layer on said insulating layer.
Claim 12
Dependent Claim
49 words
A method as defined in claim 10 wherein said steps of covering said conductor with at least one insulating layer and depositing at least one additional conductor layer on said insulating layer are performed prior to said step of electrically connecting by laser said conductor to said doped region.
References Cited (Backward Citations)
US3795974A
Cited
US4240094A
Cited
US4387503A
Cited
US4783424A
Cited
JPS58182851A
Cited
US4751197A
Cited
US4665295A
Cited
JPS6146045A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |