Method for producing compound semiconductors and apparatus therefor

Claim 1

A method of selective chemical vapor deposition for forming thin films, comprising the steps of: providing a mask having a plurality of openings on a semiconductor substrate; supplying material gases alternately onto the substrate so as to selectively form films of a semiconductor, dielectric or metal on the substrate at the respective openings of the mask so as to prevent from mixing the material gases with one another; and controlling each gas supply amount of the material gases to obtain a film growth rate for forming a corresponding monomolecular layer of the films or a monoatomic layer of the films to be formed on the substrate at the respective openings, wherein each gas supply amount of the material gases is determined in each of the following cases: (a) a minimum supply amount of each of said gases to obtain a film growth rate for forming the corresponding monomolecular layer at the farthest point from one end of an opening in all of the openings; (b) a minimum value to obtain a film forming speed for forming the corresponding monomolecular layer at the farthest point from the edge of an opening in all of the openings; (c) a first value to obtain the film growth rate for forming the corresponding monomolecular layer in the opening having the maximum ratio of an opening area and a peripheral length; (d) a second value to obtain the film growth rate for forming the corresponding monoatomic layer in the opening having the maximum ratio of the opening area and the peripheral length; (e) the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; (f) the minimum supply amount to obtain a film growth rate for saturating the corresponding monoatomic layer of each of the films; (g) a third value in a range from the minimum supply amount to an amount larger by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; (h) a fourth value in a range from the minimum supply amount to an amount larger by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; (i) a fifth value in a range from the minimum supply amount to an amount smaller by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; and (j) a sixth value in a range from the minimum supply amount to an amount smaller by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films.

Claim 2

A method of selective chemical vapor deposition for forming thin films, comprising the steps of: providing a mask having a plurality of openings on a semiconductor substrate; supplying material gases alternately onto the substrate so as to selectively form films of a semiconductor, dielectric or metal on the substrate at the respective openings of the mask so as to prevent from mixing the material gases with one another; and controlling each gas supply amount of the material gases to obtain a film growth rate for forming a corresponding monomolecular layer of the films or a monoatomic layer of the films to be formed on the substrate at the respective openings, wherein each gas supply amount of the material gases is determined in each of the following cases: (a) a minimum supply amount of each of said gases to obtain a film growth rate for forming the corresponding monomolecular layer at the farthest point from one end of an opening in all of the openings; (b) a minimum value to obtain a film forming speed for forming the corresponding monomolecular layer at the farthest point from the edge of an opening in all of the openings; (c) a first value to obtain the film growth rate for forming the corresponding monomolecular layer in the opening having the maximum ratio of an opening area and a peripheral length; (d) a second value to obtain the film growth rate for forming the corresponding monoatomic layer in the opening having the maximum ratio of the opening area and the peripheral length; (e) the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; (f) the minimum supply amount to obtain a film growth rate for saturating the corresponding monoatomic layer of each of the films; (g) a third value in a range from the minimum supply amount to an amount larger by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; (h) a fourth value in a range from the minimum supply amount to an amount larger by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; (i) a fifth value in a range from the minimum supply amount to an amount smaller by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films; and (j) a sixth value in a range from the minimum supply amount to an amount smaller by 10% than the minimum supply amount to obtain the film growth rate for saturating the corresponding monomolecular layer of each of the films.