Abstract There is disclosed a manufacturing method of self-aligned GaAs FET using refractory gate with dual structure, the manufacturing method of the invention comprising the steps of: forming first photoresist pattern on a GaAs substrate to define an active region and ion-implanting n type impurity in the active region of the GaAs substrate; sequentially depositing a nitrogen-containing silicon layer and a metal layer on the substrate after removal of the first photoresist pattern; forming second photoresist pattern on the metal layer to define a gate; removing the silicon and metal layers using the second photoresist pattern as a gate mask to form the gate with dual structure of the silicon and metal layers; forming third photoresist pattern on the substrate to define source/drain regions after removal of the second photoresist pattern, and ion-implanting high-density impurity in the source/drain regions using the third photoresist pattern and the gate as a source/drain mask; annealing the substrate to make the silicon layer as upper side of the gate into metal-silicon-nitride material, and to make bottom portion of the metal layer as lower side of the gate into metal-silicon-nitride material; and forming ohmic contacts on the source/drain regions, respectively. A GaAs FET according to the invention is provided with a gate having low-resistance and improved schottky characteristics.
A manufacturing method of self-aligned GaAs FET using refractory gate with dual structure comprising the steps of: forming a first photoresist pattern on a GaAs substrate to define an active region and ion-implanting n type impurity in the active region of the GaAs substrate; sequentially depositing a nitrogen-containing silicon layer and a metal layer on the substrate after removal of the first photoresist pattern; forming a second photoresist pattern on the metal layer to define a gate; removing the nitrogen-containing silicon and metal layers using the second photoresist pattern as a gate mask to form the gate with dual structure of the nitrogen-containing silicon and metal layers just under the second photoresist pattern; forming a third photoresist pattern on the substrate to define source/drain regions after removal of the second photoresist pattern, and ion-implanting high-density impurity in the source/drain regions using the third photoresist pattern and the gate as a source/drain mask; annealing the substrate to change the metal as upper side of the gate into metal having low-resistivity, and to make the nitrogen-containing silicon layer as lower side of the gate into metal silinitride material; and forming ohmic contacts on the source/drain regions, respectively.
Claim 2
Dependent Claim
195 words
A manufacturing method of self-aligned GaAs FET using refractory gate with dual structure comprising the steps of: forming a first photoresist pattern on a GaAs substrate to define an active region and ion-implanting n type impurity in the active region of the GaAs substrate; sequentially depositing a nitrogen-containing silicon layer and a metal layer on the substrate after removal of the first photoresist pattern; forming a second photoresist pattern on the metal layer to define a gate; removing the nitrogen-containing silicon and metal layers using the second photoresist pattern as a gate mask to form the gate with dual structure of the nitrogen-containing silicon and metal layers just under the second photoresist pattern; forming a third photoresist pattern on the substrate to define source/drain regions after removal of the second photoresist pattern, and ion-implanting high-density impurity in the source/drain regions using the third photoresist pattern and the gate as a source/drain mask; annealing the substrate to change the metal as upper side of the gate into metal having low-resistivity, and to make the nitrogen-containing silicon layer as lower side of the gate into metal silinitride material; and forming ohmic contacts on the source/drain regions, respectively.
Claim 3
Dependent Claim
26 words
The manufacturing method of self-aligned GaAs FET according to claim 1, wherein said metal layer is made of one of tungsten, tantalum, platinum, molybdenum, and titanium.
Claim 4
Dependent Claim
41 words
The manufacturing method of self-aligned GaAs FET according to claim 1, wherein said gate has T-shaped structure, using a difference of the etching selection ratio among the metal layer, the nitrogen-containing silicon layer, and the substrate, when the gate is formed.