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US5225032A
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Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
Assignee: Honeywell International Inc
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Filing: 1991-08-09
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Granted: 1993-07-06
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Expires: 2011-08-09
Abstract
Abstract Single crystalline, epitaxial, stoichiometric SiC films are deposited on single crystalline silicon substrates by a procedure which involves first treating the surface of the silicon substrate to remove any surface layer of SiO 2 , followed by heating the substrate to temperature within the range of from about 600° to about 1000°0 C. and flowing a stream including a gaseous compound of Si, H and C--free of halogen and containing Si and C in 1:1 atomic ratio--over the heated substrate.
Inventors
- 👤 Ilan Golecki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:52
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
105 words
The method for depositing a single crystalline, epitaxial SiC film on a single crystalline Si substrate which comprises, in combination, the steps of (a) treating the surface of the single crystalline silicon substrate to remove the surface layer of SiO 2 from said silicon substrate; followed by (b) heating said substrate to temperature in the range of from about 600° to about 1000° C. and flowing a gaseous stream comprising a compound composed of Si, H and C over said heated substrate, to thereby deposit a single crystalline epitaxial SiC film onto said substrate, wherein said compound contains Si and C in 1:1 atomic ratio.
Claim 2
Independent Claim
105 words
The method for depositing a single crystalline, epitaxial SiC film on a single crystalline Si substrate which comprises, in combination, the steps of (a) treating the surface of the single crystalline silicon substrate to remove the surface layer of SiO 2 from said silicon substrate; followed by (b) heating said substrate to temperature in the range of from about 600° to about 1000° C. and flowing a gaseous stream comprising a compound composed of Si, H and C over said heated substrate, to thereby deposit a single crystalline epitaxial SiC film onto said substrate, wherein said compound contains Si and C in 1:1 atomic ratio.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein said compound composed of Si, H and C is selected from the group consisting of (CH 3 SiH) 2 and H 3 SiCH 3 .
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein said compound composed of Si, H and C is (CH 3 SiH) 2 .
Claim 5
Dependent Claim
20 words
The method of claim 2 wherein said compound composed of Si, H and C is H 3 SiCH 3 .
Claim 6
Dependent Claim
43 words
The method of claim 3 wherein the treatment of the surface of said single crystalline silicon substrate to remove the surface layer of SiO 2 involves the step of subjecting said surface to the action of a reducing agent for SiO 2 .
Claim 7
Dependent Claim
43 words
The method of claim 4 wherein the treatment of the surface of said single crystalline silicon substrate to remove the surface layer of SiO 2 involves the step of subjecting said surface to the action of a reducing agent for SiO 2 .
Claim 8
Dependent Claim
40 words
The method of claim 4 wherein the treatment of the surface of said single crystalline silicon substrate to remove the surface layer of SiO 2 involves the step of subjecting said surface to the action of hydrogen at elevated temperature.
Claim 9
Dependent Claim
27 words
The method of claim 7 wherein said surface is subjected to the action of hydrogen at temperature within the range of from 600° to about 1000° C.
Claim 10
Dependent Claim
38 words
The method of claim 6 wherein the treatment of the surface of said single crystalline silicon substrate to remove the surface layer of SiO 2 involves the step of subjecting said surface to the action of hydrogen fluoride.
Claim 11
Dependent Claim
16 words
The method of claim 9 wherein the hydrogen fluoride is an aqueous solution of hydrogen fluoride.
Claim 12
Dependent Claim
35 words
The method of claim 2 wherein said compound composed of Si, H and C is methylsilane, and wherein said substrate is heated to temperature within the range of from about 700° to about 900° C.
Claim 13
Dependent Claim
21 words
The method of claim 11 wherein the surface of the single crystalline silicon substrate is in the (111) crystal plane orientation.
Claim 14
Dependent Claim
21 words
The method of claim 11 wherein the surface of the single crystalline silicon substrate is in the (110) crystal plane orientation.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein the surface of the single crystalline silicon substrate is in the (100) crystal plane orientation.
Claim 16
Dependent Claim
28 words
The method of claim 11 wherein said substrate is heated in the absence of an applied plasma, and the SiC film is deposited in a cubic crystal structure.
Claim 17
Dependent Claim
36 words
The method of claim 11 wherein said gaseous stream comprises methylsilane and hydrogen, said substrate is heated in the presence of an applied hydrogen plasma, and the SiC film is deposited in a hexagonal crystal structure.
Claim 18
Dependent Claim
23 words
The method of claim 11 with the additional step of including a doping agent for the SiC in the gaseous stream comprising methysilane.
Claim 19
Dependent Claim
28 words
The method of claim 17 wherein the doping agent comprises a volatile and thermally decomposible compound of nitrogen, phosphorus or arsenic to obtain an n-type doped SiC film.
Claim 20
Dependent Claim
27 words
The method of claim 17 wherein the doping agent comprises a volatile and thermally decomposible compound of boron or aluminum to obtain a p-type doped SiC film.
Claim 21
Dependent Claim
32 words
The method of claim 2 with the additional step of treating the Si substrate bearing the single crystalline, epitaxially deposited SiC film to remove said substrate, and to recover the SiC film.
Claim 22
Dependent Claim
67 words
The method of claim 20 with the additional step of heating said recovered SiC film to temperature in the range of from about 600° to about 1000° C. and flowing a gaseous stream comprising a compound composed of Si, H and C which contains Si and C in 1:1 atomic ratio over said heated substrate, to thereby deposit additional single crystalline epitaxial SiC onto said SiC film.
Claim 23
Dependent Claim
80 words
The method of claim 2 wherein said single crystalline silicon substrate in step (a) is subjected to an atmosphere comprising hydrogen at a temperature in the range of from about 600° to about 1000° C., and wherein in step (b) said substrate is heated to temperature within the range of from about 750° to about 900° C. and is subjected to gaseous stream comprising hydrogen and methylsilane at a pressure of from about 10 -6 Torr to about 760 Torr.
Claim 24
Dependent Claim
26 words
The method of claim 22 wherein said substrate is subjected to said gaseous stream at a pressure of from about 10 -3 to about 760 Torr.
Claim 25
Dependent Claim
17 words
The method of claim 23 wherein the single crystalline epitaxial SiC is in a cubic crystal structure.
Claim 26
Dependent Claim
31 words
The method of claim 23 wherein the substrate is heated in the presence of an applied hydrogen plasma, and the single crystalline, epitaxial SiC is obtained in a hexagonal crystal structure.
Claim 27
Dependent Claim
21 words
The method of claim 23 wherein the SiC film has a thickness of from about 5° to about 10 5 Å.
Claim 28
Dependent Claim
32 words
The method of claim 23 sequentially conducted in the absence and presence of one or more doping agents, to obtain alternating doped and undoped layers of SiC on said single crystalline substrate.
Claim 29
Dependent Claim
43 words
The method of claim 23 conducted in the presence of an atmosphere comprising a doping agent for the SiC to obtain a doped SiC layer, with the additional step of epitaxially depositing a layer of single crystalline silicon onto said doped SiC layer.
Claim 30
Dependent Claim
25 words
The method of claim 28 sequentially repeated to obtain a structure comprising alternating layers, of doped or undoped SiC, and of doped or undoped silicon.
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