Method of producing semiconductor substrate having dielectric separation region

Claim 1

A method of producing a semiconductor substrate having a buried dielectric layer by bonding between bonding planes of first and second semiconductor substrates, comprising: a processing step of forming a recess of predetermined depth on a region where the dielectric buried layer is to be formed on the bonding plane of at least one of the first and second semiconductor substrates which is to be bonded to the other of said semiconductor substrates, and a groove on the bonding plane of at least one of the first and second semiconductor substrates, the groove having an opening which communicates with a space defined by the recess, as well as an opening which is open to a peripheral end face of a corresponding substrate, a depth of the groove between a bonding plane and a bottom of the groove being deeper than a depth of the recess; a bonding step of directly bonding the bonding planes of the first and second semiconductor substrates together; a damage removing step of removing damaged parts existing at least at corners where the groove communicates with the recess after the first and second semiconductors are bonded together, among a plurality of corners along the recess and groove which are formed on at least one of the first and second substrates; and an oxidizing step, carried out after the damage removing step, of exposing the bonded substrates to an oxidizing gas and channelling the gas to flow along the groove, thereby growing an oxide film over an inner wall of the recess to form the buried dielectric layer.

Claim 2

A method of producing a semiconductor substrate having a buried dielectric layer by bonding between bonding planes of first and second semiconductor substrates, comprising: a processing step of forming a recess of predetermined depth on a region where the dielectric buried layer is to be formed on the bonding plane of at least one of the first and second semiconductor substrates which is to be bonded to the other of said semiconductor substrates, and a groove on the bonding plane of at least one of the first and second semiconductor substrates, the groove having an opening which communicates with a space defined by the recess, as well as an opening which is open to a peripheral end face of a corresponding substrate, a depth of the groove between a bonding plane and a bottom of the groove being deeper than a depth of the recess; a bonding step of directly bonding the bonding planes of the first and second semiconductor substrates together; a damage removing step of removing damaged parts existing at least at corners where the groove communicates with the recess after the first and second semiconductors are bonded together, among a plurality of corners along the recess and groove which are formed on at least one of the first and second substrates; and an oxidizing step, carried out after the damage removing step, of exposing the bonded substrates to an oxidizing gas and channelling the gas to flow along the groove, thereby growing an oxide film over an inner wall of the recess to form the buried dielectric layer.

Claim 4

A method of producing a semiconductor substrate having a dielectric separation region as set forth in claim-.1, wherein the processing step forms the recess on the first semiconductor substrate, and the groove on the second semiconductor substrate.

Claim 17

A method of producing a semiconductor substrate having a buried dielectric layer by bonding first and second semiconductor substrates, each having bonding planes, comprising: a first processing step of forming a groove on the bonding plane in a region which is included in a predetermined region of the first semiconductor substrate where the buried dielectric layer is to be formed; a second processing step of forming a recess on the predetermined region including the opening of the groove on the principal bonding plane of the first semiconductor substrate; a bonding step of directly bonding the bonding planes of the first and second semiconductor substrates together to form a space inside the bonded substrates with the recess; a damage removing step of growing and forming an oxide film by thermally oxidizing a region including corners which may have been damaged due to the groove formed in the processing step on the principal bonding plane of the first semiconductor substrate, and then removing the oxide film; and an oxidizing step, occurring subsequent to the damage removing step, of exposing the bonded substrates to an oxidizing gas to channel the gas to flow along the groove toward the space, thereby growing an oxide film in the space to form the buried dielectric layer.

Claim 18

A method of producing a semiconductor substrate having a buried dielectric layer by bonding first and second semiconductor substrates, each having bonding planes, comprising: a first processing step of forming a groove on the bonding plane in a region which is included in a predetermined region of the first semiconductor substrate where the buried dielectric layer is to be formed; a second processing step of forming a recess on the predetermined region including the opening of the groove on the principal bonding plane of the first semiconductor substrate; a bonding step of directly bonding the bonding planes of the first and second semiconductor substrates together to form a space inside the bonded substrates with the recess; a damage removing step of growing and forming an oxide film by thermally oxidizing a region including corners which may have been damaged due to the groove formed in the processing step on the principal bonding plane of the first semiconductor substrate, and then removing the oxide film; and an oxidizing step, occurring subsequent to the damage removing step, of exposing the bonded substrates to an oxidizing gas to channel the gas to flow along the groove toward the space, thereby growing an oxide film in the space to form the buried dielectric layer.

Claim 20

A method of producing a semiconductor substrate having a dielectric buried layer by bonding together bonding planes of first and second semiconductor substrates, comprising: a first processing step of forming a groove on the bonding plane of the first substrate, the groove having an opening in a region which is covered with a predetermined region where the dielectric buried layer is to be formed; a second processing step of forming a recess on the predetermined region on the bonding plane of the second semiconductor substrate, the predetermined region covering the opening of the groove and facing the principal bonding plane of the first semiconductor substrate on which the groove has been formed; a bonding step of directly bonding the bonding planes of the first and second substrates together to form a space inside the bonded substrates with the recess; a damage removing step of growing and forming an oxide film by thermally oxidizing a region including corners which may have been damaged due to the groove formed in the processing step on the principal bonding plane of the first semiconductor substrate, and then removing the oxide film; and a dielectric buried layer forming step, subsequent to said damage removing step, of exposing the bonded substrates to an oxidizing gas to channel the gas to flow along the groove toward the space, thereby growing an oxide film in the space to from the buried dielectric layer.

Claim 21

A method of producing a semiconductor substrate having a dielectric buried layer by bonding together bonding planes of first and second semiconductor substrates, comprising: a first processing step of forming a groove on the bonding plane of the first substrate, the groove having an opening in a region which is covered with a predetermined region where the dielectric buried layer is to be formed; a second processing step of forming a recess on the predetermined region on the bonding plane of the second semiconductor substrate, the predetermined region covering the opening of the groove and facing the principal bonding plane of the first semiconductor substrate on which the groove has been formed; a bonding step of directly bonding the bonding planes of the first and second substrates together to form a space inside the bonded substrates with the recess; a damage removing step of growing and forming an oxide film by thermally oxidizing a region including corners which may have been damaged due to the groove formed in the processing step on the principal bonding plane of the first semiconductor substrate, and then removing the oxide film; and a dielectric buried layer forming step, subsequent to said damage removing step, of exposing the bonded substrates to an oxidizing gas to channel the gas to flow along the groove toward the space, thereby growing an oxide film in the space to from the buried dielectric layer.

Claim 23

A method of producing a semiconductor substrate having a buried dielectric layer by bonding bonding planes of first and second semiconductor substrates, comprising: a first processing step of forming a groove on the principal bonding plane of the first substrate, the groove having an opening in a region which is included in a predetermined region of the first semiconductor substrate where the buried dielectric layer is to be formed; an oxide film forming step of forming an oxide film by thermally oxidizing the predetermined region including corners of the groove formed in the bonding planes of first processing step on the bonding plane of the first semiconductor substrate; a damage removing step of removing the oxide film to remove damaged parts from the corners as well as forming a recess communicating with the groove on the bonding plane of the first semiconductor substrate; a bonding step of directly bonding the first and second substrates together to form a space inside the bonded substrates with the recess; and a dielectric buried layer forming step of exposing the bonded substrates to an oxidizing gas atmosphere to let the gas flow along the groove toward the space, thereby growing an oxide film in the space to form the buried dielectric layer.

Claim 24

A method of producing a semiconductor substrate having a buried dielectric layer by bonding bonding planes of first and second semiconductor substrates, comprising: a first processing step of forming a groove on the principal bonding plane of the first substrate, the groove having an opening in a region which is included in a predetermined region of the first semiconductor substrate where the buried dielectric layer is to be formed; an oxide film forming step of forming an oxide film by thermally oxidizing the predetermined region including corners of the groove formed in the bonding planes of first processing step on the bonding plane of the first semiconductor substrate; a damage removing step of removing the oxide film to remove damaged parts from the corners as well as forming a recess communicating with the groove on the bonding plane of the first semiconductor substrate; a bonding step of directly bonding the first and second substrates together to form a space inside the bonded substrates with the recess; and a dielectric buried layer forming step of exposing the bonded substrates to an oxidizing gas atmosphere to let the gas flow along the groove toward the space, thereby growing an oxide film in the space to form the buried dielectric layer.