Manufacture of semiconductor substrate

Abstract

Abstract PURPOSE:To form an oxide film in a recess by burial by a method wherein a groove and a recess are formed in the first semiconductor substrate, and a junction substrate is formed by making the first and second semiconductor substrates opposed to each other, and is exposed to an oxidizing gas atmosphere. CONSTITUTION:Grooves 2 opened at the end surface of the first semiconductor substrate 11 are formed in the surface of the substrate 11 which has been polished in mirror. In the surface of the substrate 11 or the second semiconductor substrate 12 polished in mirror which is to be in junction with this substrate, the recess 3 coming continuous to the grooves 2 at the time of junction of the substrate 11 with the substrate 12 is formed. The junction substrate 1 is formed by adhering the substrate 11 and the substrate 12 in opposition under a clean atmosphere. Then, the substrate 1 is exposed to an oxidizing gas atmosphere. This manner enables the burial formation of the oxide film 4 in the recess 3.

Inventors

• 👤 Masaru Shinpo
• 👤 新保　優
• 👤 Kiyoshi Fukuda
• 👤 潔 福田
• 👤 Kazuyoshi Furukawa
• 👤 和由 古川
• 👤 Tamotsu Ohata
• 👤 大畑　有

Bibliographic Details