Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form at a low cost an insulated island region and a region where a current path connected to the rear surface of a substrate can be provided, on the principal surface of the substrate, by bonding two semiconductor substrates together and polishing them. CONSTITUTION:A silicon substrate 21 is provided with recesses, while another silicon substrate 22 is provided with projections. Thermally oxidized films 23 and 24 are formed on the recessed and projected surfaces of the substrates 21 and 22, respectively. The substrates 21 and 22 are then bonded with their recessed and projected surfaces contacted with each other. The surface of the substrate 22 opposite to the bonded surface thereof is polished until the bonded surface of the substrate 21 is partially exposed. Consequently, the substrate 21 is provided with silicon layers 25 on its principal surface. A CVD oxide film 26 is deposited on the whole surface of the substrate 21 and then etched so that the gaps defined between the thermally oxidized film 23 and the thermally oxidized film 24 located on the periphery of the silicon layers 25 is consequently filled with the oxide films 26.

Inventors

• 👤 Koichi Kitahara
• 👤 北原　広一
• 👤 Tamotsu Ohata
• 👤 大畑　有

Bibliographic Details