Method for removal of photoresist over metal which also removes or inactivates corosion-forming materials remaining from previous metal etch

Claim 2

A process for passivating an integrated circuit structure, to inhibit corrosion from chlorine residues remaining after a metal etch, while stripping photoresist remaining from said metal etch which comprises: a) optionally exposing said structure to one or more stripping gases; and b) then treating said structure for a period of at least about 30 seconds in a plasma containing a mixture of: (i) O 2 gas, (ii) a mixture of H 2 O 2 /H 2 O, and (iii) optionally N 2 gas; to inhibit the formation of corrosion from chlorine-containing residues on said integrated circuit structure.

Claim 3

The process of claim 1 which further comprises carrying out said process in a stripping chamber and igniting a plasma associated with said stripping chamber during said step b).

Claim 4

The process of claim 2 wherein said plasma ignited during said step b) is maintained at a power level of from about 500 to about 2500 watts.

Claim 5

The process of claim 3 wherein said plasma is generated in a microwave plasma generator upstream of said stripping chamber.

Claim 6

The process of claim 3 wherein the ratio of H 2 O 2 to H 2 O in said mixture of H 2 O 2 /H 2 O ranges from about 0.3 volume % H 2 O 2 to about 30 volume % H 2 O 2 .

Claim 7

A process for stripping photoresist from an integrated circuit structure in a stripping chamber, while inhibiting corrosion from chlorine residues remaining after a metal etch, which comprises: a) exposing said structure to one or more stripping gases for a period of at least about 10 seconds; and b) then exposing said structure to a mixture of: (i) O 2 gas, (ii) a mixture of H 2 O 2 /H 2 O, and (iii) optionally N 2 gas; in the form of a plasma for a period of at least about 30 seconds to inhibit the formation of corrosion from chlorine-containing residues on said integrated circuit structure.

Claim 8

A process for stripping photoresist from an integrated circuit structure in a stripping chamber, while inhibiting corrosion from chlorine residues remaining after a metal etch, which comprises: a) exposing said structure to one or more stripping gases for a period of at least about 10 seconds; and b) then exposing said structure to a mixture of: (i) O 2 gas, (ii) a mixture of H 2 O 2 /H 2 O, and (iii) optionally N 2 gas; in the form of a plasma for a period of at least about 30 seconds to inhibit the formation of corrosion from chlorine-containing residues on said integrated circuit structure.

Claim 9

The process of claim 6 wherein said plasma ignited during said step b) is maintained at a power level of from about 500 to about 2500 watts.

Claim 10

The process of claim 6 wherein said plasma is generated in a microwave plasma generator upstream of said stripping chamber.

Claim 11

The process of claim 6 wherein said mixture of H 2 O 2 /H 2 O is a liquid in aerosol form and the ratio of H 2 O 2 to H 2 O in said mixture of H 2 O 2 /H 2 O ranges from about 3 mole % H 2 O 2 to about 30 mole % H 2 O 2 .

Claim 12

The process of claim 6 wherein said mixture of H 2 O 2 /H 2 O is in the form of a vapor and the ratio of H 2 O 2 to H 2 O in said mixture of H 2 O 2 /H 2 O vapor ranges from about 0.3 mole % H 2 O 2 to about 3 mole % H 2 O 2 .

Claim 13

A process of claim 6 wherein said mixture of H 2 O 2 /H 2 O flows into said stripping chamber at a rate equivalent to a flow of from about 100 sccm to about 500 sccm into a 5 liter chamber.

Claim 14

The process of claim 6 wherein said O 2 gas and optional N 2 gas flow into said stripping chamber during said step b) at a rate equivalent to an O 2 flow of from about 2000 sccm to about 4000 sccm, and an N 2 flow of 0 to about 500 sccm into a 5 liter chamber.

Claim 15

The process of claim 6 which further comprises providing a plasma during said step a) maintained at a power level of from about 500 to about 2500 watts.

Claim 16

The process of claim 13 wherein said step a) comprises exposing said wafer to a stripping gas comprising a combination of O 2 gas and one or more fluorocarbon gases in the form of a plasma.

Claim 17

The process of claim 14 wherein said O 2 gas and said one or more fluorocarbon gases are flowed into said stripping chamber during said step a) at a rate equivalent to flowing from about 1000 sccm to about 4000 sccm of said O 2 gas and from about 20 sccm to about 80 sccm of said one or more fluorocarbon gases into a 5 liter chamber.

Claim 18

The process of claim 13 wherein said step a) further comprises exposing said wafer to a stripping gas comprising a combination of O 2 gas and N 2 gas.

Claim 19

The process of claim 16 wherein O 2 and N 2 gases are flowed into said stripping chamber during said step a) at a rate equivalent to flowing from about 1000 sccm to about 4000 sccm of said O 2 gas and from about 20 sccm to about 150 sccm of said N 2 gas into a 5 liter chamber.

Claim 20

The process of claim 6 wherein said wafer is maintained at a temperature of from about 100° C. to about 400° C. during said step b).

Claim 21

The process of claim 18 wherein said wafer is maintained at from about 40° C. to about 100° C. during said step a) and then heated to said step b) temperature range at a rate of about 10° C. per second.

Claim 22

The process of claim 6 wherein said stripping chamber is maintained at a pressure of from about 0.5 Torr to about 3 Torr during said process.

Claim 23

A process for removing, from an integrated circuit structure, photoresist remaining after a metal etch which comprises: a) flowing into a stripping chamber containing said integrated circuit structure a mixture of O 2 and a further gas selected from the group consisting of N 2 , and one or more fluorocarbon gases for a period of at least about 10 seconds; b) igniting a plasma associated with said stripping chamber while said O 2 and said further gas are flowing into said stripping chamber; c) extinguishing said plasma; d) then flowing a mixture of H 2 O 2 /H 2 O, O 2 gas, and N 2 gas into said stripping chamber at a rate equivalent to a flow of from about 100 sccm to about 500 sccm of said H 2 O 2 /H 2 O, from about 1000 sccm to about 4000 sccm of said O 2 gas, and from 0 to about 500 sccm of N 2 gas into a 5 liter chamber for a period of at least about 30 seconds; and e) igniting a plasma associated with said stripping chamber after said H 2 O 2 /H 2 O , O 2 , and N 2 begin flowing into said stripping chamber.

Claim 24

A process for removing, from an integrated circuit structure, photoresist remaining after a metal etch which comprises: a) flowing into a stripping chamber containing said integrated circuit structure a mixture of O 2 and a further gas selected from the group consisting of N 2 , and one or more fluorocarbon gases for a period of at least about 10 seconds; b) igniting a plasma associated with said stripping chamber while said O 2 and said further gas are flowing into said stripping chamber; c) extinguishing said plasma; d) then flowing a mixture of H 2 O 2 /H 2 O, O 2 gas, and N 2 gas into said stripping chamber at a rate equivalent to a flow of from about 100 sccm to about 500 sccm of said H 2 O 2 /H 2 O, from about 1000 sccm to about 4000 sccm of said O 2 gas, and from 0 to about 500 sccm of N 2 gas into a 5 liter chamber for a period of at least about 30 seconds; and e) igniting a plasma associated with said stripping chamber after said H 2 O 2 /H 2 O , O 2 , and N 2 begin flowing into said stripping chamber.

Claim 25

The process of claim 21 wherein said plasma in said step e) is maintained at a power level of from about 500 watts to about 2500 watts while said H 2 O 2 /H 2 O , O 2 , and N 2 are flowing into said stripping chamber.

Claim 26

The process of claim 21 wherein said step of flowing a mixture of H 2 O 2 /H 2 O, O 2 gas, and N 2 gas into said stripping chamber is carried out for a period of from about 30 seconds to about 4 minutes.

Claim 27

A process for removing, from an integrated circuit structure, photoresist remaining after a metal etch, which process also removes or inactivates chlorine residues remaining from said previous metal etch, comprising: a) flowing through a microwave plasma generator into a stripping chamber containing said integrated circuit structure a mixture of O 2 and one or more fluorocarbon gases for a period of at least about 10 seconds at a rate equivalent to flowing from about 1000 sccm to about 2000 sccm of said O 2 gas and from about 20 sccm to about 80 sccm of said fluorocarbon gas into a 5 liter chamber; b) igniting a plasma in said microwave plasma generator and maintaining said plasma in said generator at a power level of from about 500 watts to about 2500 watts while said O 2 and one or more fluorocarbon gases are flowing through said plasma generator into said stripping chamber; c) then extinguishing said plasma and shutting off said flow of said one or more fluorocarbon gases into said stripping chamber while maintaining said flow of O 2 into said chamber to purge said stripping chamber of said fluorocarbon gases; d) then flowing a mixture of H 2 O 2 /H 2 O vapors, O 2 gas, and N 2 gas through said plasma generator into said stripping chamber at a rate equivalent to a flow of from about 100 sccm to about 500 sccm of H 2 O 2 /H 2 O vapors, from about 1000 sccm to about 4000 sccm of O 2 , and from 0 to about 500 sccm of N 2 gas into a 5 liter chamber; and e) igniting a plasma in said microwave plasma generator at least about 10 seconds after said vapors and gases begin flowing through said generator into said stripping chamber and maintaining said plasma at a power level of from about 500 watts to about 2500 watts for a period of at least about 30 seconds.

Claim 28

A process for removing, from an integrated circuit structure, photoresist remaining after a metal etch, which process also removes or inactivates chlorine residues remaining from said previous metal etch, comprising: a) flowing through a microwave plasma generator into a stripping chamber containing said integrated circuit structure a mixture of O 2 and one or more fluorocarbon gases for a period of at least about 10 seconds at a rate equivalent to flowing from about 1000 sccm to about 2000 sccm of said O 2 gas and from about 20 sccm to about 80 sccm of said fluorocarbon gas into a 5 liter chamber; b) igniting a plasma in said microwave plasma generator and maintaining said plasma in said generator at a power level of from about 500 watts to about 2500 watts while said O 2 and one or more fluorocarbon gases are flowing through said plasma generator into said stripping chamber; c) then extinguishing said plasma and shutting off said flow of said one or more fluorocarbon gases into said stripping chamber while maintaining said flow of O 2 into said chamber to purge said stripping chamber of said fluorocarbon gases; d) then flowing a mixture of H 2 O 2 /H 2 O vapors, O 2 gas, and N 2 gas through said plasma generator into said stripping chamber at a rate equivalent to a flow of from about 100 sccm to about 500 sccm of H 2 O 2 /H 2 O vapors, from about 1000 sccm to about 4000 sccm of O 2 , and from 0 to about 500 sccm of N 2 gas into a 5 liter chamber; and e) igniting a plasma in said microwave plasma generator at least about 10 seconds after said vapors and gases begin flowing through said generator into said stripping chamber and maintaining said plasma at a power level of from about 500 watts to about 2500 watts for a period of at least about 30 seconds.