Process for cleaning surface of semiconductor substrate

Claim 2

A process for treating a surface of a semiconductor substrate containing metal contaminants, said process comprising the steps of: placing the semiconductor substrate in a plasma-free atmosphere containing high purity chlorine gas and irradiating at least one of the atmosphere above the semiconductor substrate and the surface of the semiconductor substrate with ultraviolet rays to excite the chlorine gas in the atmosphere without forming a plasma, thereby forming chlorine radicals which etch the surface of the semiconductor substrate, bond with the contaminant metals from within the semiconductor substrate and form a reaction product with substrate constituting material on the surface of the substrate; removing the substrate from the plasma free atmosphere; and wet cleaning the surface of the semiconductor substrate with a cleaning solution to remove the reaction product, as well as the metal contaminants bonded to the chlorine radicals.

Claim 3

A process according to claim 1, wherein said wet cleaning step comprises wet cleaning the surface of the semiconductor substrate first with a fluoric acid solution and then with a solution containing hydrogen peroxide and ammonia.

Claim 4

A process according to claim 1, wherein said semiconductor substrate is made of silicon.

Claim 5

A process for treating a surface of a silicon semiconductor substrate containing metal contaminants, said process comprising the steps of: etching a surface of the silicon semiconductor substrate by placing the substrate in a substantially plasma-free atmosphere containing high purity chlorine gas and irradiating at least the atmosphere above the substrate and the surface of the semiconductor substrate with ultraviolet rays to excite the chlorine gas, thereby forming chlorine radicals which etch the surface of the semiconductor substrate, bond with the contaminant metals from within the semiconductor substrate and form a reaction product with substrate constituting material on the surface of the substrate; removing the substrate from the plasma-free atmosphere; rinsing the substrate; wet cleaning the surface of the substrate with an aqueous fluoric acid solution; rinsing the substrate; wet cleaning the surface of the substrate with an aqueous solution containing hydrogen peroxide and ammonia; and rinsing the substrate, said rinsing and wet cleaning steps removing the reaction product, as well as the metal contaminants bonded to the chlorine radicals.

Claim 6

A process for treating a surface of a silicon semiconductor substrate containing metal contaminants, said process comprising the steps of: etching a surface of the silicon semiconductor substrate by placing the substrate in a substantially plasma-free atmosphere containing high purity chlorine gas and irradiating at least the atmosphere above the substrate and the surface of the semiconductor substrate with ultraviolet rays to excite the chlorine gas, thereby forming chlorine radicals which etch the surface of the semiconductor substrate, bond with the contaminant metals from within the semiconductor substrate and form a reaction product with substrate constituting material on the surface of the substrate; removing the substrate from the plasma-free atmosphere; rinsing the substrate; wet cleaning the surface of the substrate with an aqueous fluoric acid solution; rinsing the substrate; wet cleaning the surface of the substrate with an aqueous solution containing hydrogen peroxide and ammonia; and rinsing the substrate, said rinsing and wet cleaning steps removing the reaction product, as well as the metal contaminants bonded to the chlorine radicals.

Claim 7

A process according to claim 4, wherein said rinsing steps comprise first cleaning the surface of the substrate with running deionized water and then immersing the substrate in boiling deionized water.