Patent US5208725A successfully refreshed from Google Patents.
US5208725A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High capacitance structure in a semiconductor device
Assignee: Lonestar Inventions LP
•
Filing: 1992-08-19
•
Granted: 1993-05-04
•
Expires: 2012-08-19
Abstract
Abstract The present invention provides for a capacitor structure on a semiconductor substrate with an enhanced capacitance. The structure has a first layer of conducting strips parallel to each other on the substrate and a second layer of conducting strips which are parallel to each other. The second layer strips overlie and are substantially congruent to the first layer conducting strips in a top view of the semiconductor substrate. The first layer conducting strips are alternately connected to a first node and a second node, and the second layer conducting strips are alternately connected to the first node and the second node in such a manner that each first layer conducting strip and a second layer conducting strip overlying the first layer conducting strip are connected to different nodes. The first and second nodes form two opposing nodes of the capacitor structure.
Inventors
- 👤 Osman E. Akcasu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:15
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/496; H10D; H10D1/00; H10D1/60; H10D1/68; H10D88/00; H10D1/692; H10D1/711
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
130 words
On a semiconductor substrate, a capacitor structure comprising a first layer of conducting strips parallel to each other on said substrate; and a second layer of conducting strips parallel to each other, said second layer of conducting strips overlying, electrically separated from and substantially congruent to said first layer of conducting strips in a top view; said first layer of conducting strips alternately connected to a first node and a second node, said second layer of conducting strips alternately connected to said first node and said second node in such a manner that each first layer conducting strip and a second layer conducting strip overlying said first layer conducting strip are connected to different nodes; whereby said first and second nodes form two opposing nodes of an enhanced capacitor structure.
Claim 2
Dependent Claim
130 words
On a semiconductor substrate, a capacitor structure comprising a first layer of conducting strips parallel to each other on said substrate; and a second layer of conducting strips parallel to each other, said second layer of conducting strips overlying, electrically separated from and substantially congruent to said first layer of conducting strips in a top view; said first layer of conducting strips alternately connected to a first node and a second node, said second layer of conducting strips alternately connected to said first node and said second node in such a manner that each first layer conducting strip and a second layer conducting strip overlying said first layer conducting strip are connected to different nodes; whereby said first and second nodes form two opposing nodes of an enhanced capacitor structure.
Claim 3
Dependent Claim
16 words
The capacitor structure of claim 1 wherein both first and second conducting layer strips comprise metal.
Claim 4
Dependent Claim
73 words
The capacitor structure of claim 1 wherein said first layer of conducting strips have substantially a width w, a height h, and are substantially separated from each other by said width w, said second layer of conducting strips having substantially the same dimensions and separation, said first layer of conducting strips being separated from said second layer of conducting strips by distance d, the relationship between w, h and d being w.sup.2 <2hd.
Claim 5
Dependent Claim
76 words
The capacitor structure of claim 1 further comprising a third layer of conducting strips parallel to each other, said third layer of conducting strips overlying and substantially congruent to said second layer of conducting strips in a top view; said third layer of conducting strips alternately connected to said first and second nodes in such a manner that a third layer of conducting strip overlying said second layer of conducting strip are connected to different nodes.
Claim 6
Dependent Claim
177 words
The capacitor structure of claim 1 wherein said conducting strips of said first and second layers have first and second ends, said first layer of conducting strips being alternately connected at said first ends by a first base strip and at said second ends by a second base strip, said second layer of conducting strips connected at said first ends by a first base strip and at said second ends by a second base strip, said first base strip of said first layer being connected to said first base strip of said second layer and said second base strip of said first layer being connected to said second base strip of said second layer so that said conducting strips connected to said first base strip of said second conducting layer lie over said conducting strips connected to said second base strip of said first conducting layer and said conducting strips connected to said second base strip of said second conducting layer lie over said conducting strips connected to said first base strip of said first conducting layer.
Claim 7
Dependent Claim
75 words
The capacitor structure of claim 5 further comprising a third layer of conducting strips parallel to each other, said third layer of conducting strips overlying and being substantially congruent to said second layer of conducting strips in a top view; said third layer of conducting strips being alternatively connected to said first and second nodes in such a manner that third layer conducting strips overlying said second layer conducting strips are connected to different nodes.
Claim 8
Dependent Claim
74 words
The capacitor structure of claim 6 further comprising a fourth layer of conducting strips parallel to each other, said fourth layer of conducting strips overlying and substantially congruent to said third layer of conducting strips in a top view; said fourth layer of conducting strips alternately connected to said first and second nodes in such a manner that third layer conducting strips overlying said second layer conducting strips are connected to the same nodes.
Claim 9
Dependent Claim
50 words
The capacitor structure of claim 1 wherein the number of first conducting layer strips equal the number of second conducting layer strips, and the number of first conducting layer strips connected to said first node is equal to the number of first conducting layer strips connected to said second node.
Claim 10
Dependent Claim
24 words
The capacitor structure of claim 1 wherein said first and second layer of conducting strips are separated by an insulating layer of silicon dioxide.
Claim 11
Dependent Claim
31 words
The capacitor structure of claim 1 wherein said first and second layer of conducting strips are separated by an insulating layer of a ferro-electric ceramic having an extremely high dielectric constant.
Claim 12
Dependent Claim
12 words
The capacitor structure of claim 10 wherein said ferro-electric ceramic comprises PLZT.
Claim 13
Dependent Claim
23 words
The capacitor structure of claim 1 wherein said capacitor structure is formed as part of an integrated circuit formed on said semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-03 | 1996-11-02 | 1997-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-03 | 2000-11-02 | 2001-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-03 | 2004-11-02 | 2005-05-04 | $7700.00 | Window Closed / Lapsed |