US4914546A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stacked multi-polysilicon layer capacitor
Assignee: Microchip Technology Inc
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Filing: 1989-02-03
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Granted: 1990-04-03
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Expires: 2009-02-03
Abstract
Abstract A multilayer polysilicon structure is formed, where the various polysilicon layers and a conductive diffused region form plates of stacked capacitors, and electrodes contact each of the capacitor plates. The resulting capacitor structure inherently forms a series connected capacitor structure where each capacitor shares a plate with an adjacent capacitor. The structure is well suited for use in a voltage multiplier where each capacitor is charged to the supply voltage with the total voltage across the series connected capacitors being a multiple of the supply voltage. The dielectric layer between each of the polysilicon layers and between the first polysilicon layer and the diffused region may be nitride, oxide, or a combination of both.
Inventors
- 👤 Martin J. Alter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:17
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/212; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/68
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
102 words
A capacitor structure comprising: a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; a second layer of insulation formed over said first layer of highly conductive material; a second layer of highly conductive material formed over said second layer of insulation; and first, second, and third electrodes contacting said diffused region, said first layer of highly conductive material, and said second layer of highly conductive material, respectively.
Claim 2
Dependent Claim
102 words
A capacitor structure comprising: a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; a second layer of insulation formed over said first layer of highly conductive material; a second layer of highly conductive material formed over said second layer of insulation; and first, second, and third electrodes contacting said diffused region, said first layer of highly conductive material, and said second layer of highly conductive material, respectively.
Claim 3
Dependent Claim
28 words
The capacitor structure of claim 1 wherein said first layer of insulation comprises a gate oxide layer and a silicon nitride layer formed over said gate oxide layer.
Claim 4
Dependent Claim
27 words
The capacitor structure of claim 1 wherein said second layer of insulation comprises a layer of oxide and a layer of silicon nitride overlying said oxide layer.
Claim 5
Dependent Claim
14 words
The capacitor structure of claim 1 wherein said highly conductive material is doped polysilicon.
Claim 6
Dependent Claim
14 words
The capacitor structure of claim 1 wherein said highly conductive material is a metal.
Claim 7
Dependent Claim
13 words
The capacitor structure of claim 1 wherein said highly conductive material is polycide.
Claim 8
Dependent Claim
120 words
A capacitor structure comprising: a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material; and electrodes contacting said diffused region, said first layer of highly conductive material, and each of said layers of highly conductive material within said combination layers, said electrodes not coupling any combination of said layers of highly conductive material together.
Claim 9
Dependent Claim
120 words
A capacitor structure comprising: a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material; and electrodes contacting said diffused region, said first layer of highly conductive material, and each of said layers of highly conductive material within said combination layers, said electrodes not coupling any combination of said layers of highly conductive material together.
Claim 10
Dependent Claim
28 words
The capacitor structure of claim 7 wherein said first layer of insulation comprises a gate oxide layer and a silicon nitride layer formed over said gate oxide layer.
Claim 11
Dependent Claim
32 words
The capacitor structure of claim 7 wherein said layer of insulation within each of said combination layers comprises a layer of oxide and a layer of silicon nitride overlying said oxide layer.
Claim 12
Dependent Claim
21 words
The capacitor structure of claim 7 wherein at least one of said layers of insulation comprises a sandwich layer of oxide/nitride/oxide.
Claim 13
Dependent Claim
14 words
The capacitor structure of claim 7 wherein said highly conductive material is doped polysilicon.
Claim 14
Dependent Claim
13 words
The capacitor structure of claim 7 wherein said highly conductive material is metal.
Claim 15
Dependent Claim
13 words
The capacitor structure of claim 7 wherein said highly conductive material is polycide.
Claim 16
Dependent Claim
199 words
A monolithic voltage multiplier comprising: a serial combination of stacked capacitors, each of said capacitors having an upper capacitor plate and a lower capacitor plate, each of said upper capacitor plates having an electrode in contact therewith, said electrodes not coupling any of said upper and lower capacitor plates together; and means for charging each of said capacitors in said serial combination of stacked capacitors to a power supply voltage so that voltage across said serial combination of stacked capacitors will be a multiple of said power supply voltage, said serial combination of stacked capacitors comprising, a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; and a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material, said electrodes contacting said diffused region, said first layer of highly conductive material, and each of said layers of highly conductive material within said combination layers.
Claim 17
Dependent Claim
199 words
A monolithic voltage multiplier comprising: a serial combination of stacked capacitors, each of said capacitors having an upper capacitor plate and a lower capacitor plate, each of said upper capacitor plates having an electrode in contact therewith, said electrodes not coupling any of said upper and lower capacitor plates together; and means for charging each of said capacitors in said serial combination of stacked capacitors to a power supply voltage so that voltage across said serial combination of stacked capacitors will be a multiple of said power supply voltage, said serial combination of stacked capacitors comprising, a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; and a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material, said electrodes contacting said diffused region, said first layer of highly conductive material, and each of said layers of highly conductive material within said combination layers.
Claim 18
Dependent Claim
208 words
A monolithic voltage multiplier comprising: a serial combination of stacked capacitors, each of said capacitors having an upper capacitor plate and a lower capacitor plate, each of said upper capacitor plates having an electrode in contact therewith, said electrodes coupling a combination of said upper and lower capacitor plates together to provide desired voltage ratioing for said voltage multiplier; and means for charging each of said capacitors in said serial combination of stacked capacitors to a power supply voltage so that voltage across said serial combination of stacked capacitors will be a multiple of said power supply voltage, said serial combination of stacked capacitors comprising, a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; and a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material, said electrodes contacting said diffused region, said first layer of highly conductive material, and each of said layers of highly conductive material within said combination layers.
Claim 19
Dependent Claim
208 words
A monolithic voltage multiplier comprising: a serial combination of stacked capacitors, each of said capacitors having an upper capacitor plate and a lower capacitor plate, each of said upper capacitor plates having an electrode in contact therewith, said electrodes coupling a combination of said upper and lower capacitor plates together to provide desired voltage ratioing for said voltage multiplier; and means for charging each of said capacitors in said serial combination of stacked capacitors to a power supply voltage so that voltage across said serial combination of stacked capacitors will be a multiple of said power supply voltage, said serial combination of stacked capacitors comprising, a highly conductive diffused region formed in a substrate, said diffused region and said substrate being of opposite conductivity types; a first layer of insulation formed over said diffused region; a first layer of highly conductive material formed over said first layer of insulation; and a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material, said electrodes contacting said diffused region, said first layer of highly conductive material, and each of said layers of highly conductive material within said combination layers.
Claim 20
Dependent Claim
177 words
A monolithic voltage multiplier comprising: a serial combination of stacked capacitors, each of said capacitors having an upper capacitor plate and a lower capacitor plate, each of said upper capacitor plates having an electrode in contact therewith, said electrodes not coupling any of said upper and lower capacitor plates together; and means for charging each of said capacitors in said serial combination of stacked capacitors to a power supply voltage so that voltage across said serial combination of stacked capacitors will be a multiple of said power supply voltage, said serial combination of stacked capacitors comprising, a substrate; a first layer of insulation formed over said substrate; a first layer of highly conductive material formed over said first layer of insulation; and a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material, said electrodes contacting said first layer of highly conductive material and each of said layers of highly conductive material within said combination layers.
Claim 21
Dependent Claim
177 words
A monolithic voltage multiplier comprising: a serial combination of stacked capacitors, each of said capacitors having an upper capacitor plate and a lower capacitor plate, each of said upper capacitor plates having an electrode in contact therewith, said electrodes not coupling any of said upper and lower capacitor plates together; and means for charging each of said capacitors in said serial combination of stacked capacitors to a power supply voltage so that voltage across said serial combination of stacked capacitors will be a multiple of said power supply voltage, said serial combination of stacked capacitors comprising, a substrate; a first layer of insulation formed over said substrate; a first layer of highly conductive material formed over said first layer of insulation; and a plurality of combination layers stacked over said first layer of highly conductive material, each of said combination layers comprising a layer of insulation with an overlying layer of highly conductive material, said electrodes contacting said first layer of highly conductive material and each of said layers of highly conductive material within said combination layers.
Claim 22
Dependent Claim
17 words
The capacitor structure of claim 14, 15, or 16 wherein said highly conductive material is doped polysilicon.
Claim 23
Dependent Claim
17 words
The capacitor structure of claim 14, 15 or 16 wherein said highly conductive material is a metal.
Claim 24
Dependent Claim
16 words
The capacitor structure of claim 14, 15 or 16 wherein said highly conductive material is polycide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-02 | 1993-10-02 | 1994-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-02 | 1997-10-02 | 1998-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-02 | 2001-10-02 | 2002-04-03 | $7700.00 | Window Closed / Lapsed |