Patent US5202571A successfully refreshed from Google Patents.
US5202571A
Expired / Lapsed
US
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Electron emitting device with diamond
Assignee: Canon Inc
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Filing: 1991-07-03
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Granted: 1993-04-13
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Expires: 2011-07-03
Abstract
Abstract An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.
Inventors
- 👤 Keiji Hirabayashi
- 👤 Noriko Kurihara
- 👤 Takeo Tsukamoto
- 👤 Nobuo Watanabe
- 👤 Masahiko Okunuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:24
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/308
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
24 words
An electron emitting device provided with a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer.
Claim 2
Dependent Claim
24 words
An electron emitting device provided with a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer.
Claim 3
Dependent Claim
87 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieves by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor layer is used as said electron avalanche inducing layer.
Claim 4
Dependent Claim
87 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieves by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor layer is used as said electron avalanche inducing layer.
Claim 5
Dependent Claim
88 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor diamond layer is used as said electron avalanche inducing layer.
Claim 6
Dependent Claim
88 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor diamond layer is used as said electron avalanche inducing layer.
Claim 7
Dependent Claim
94 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer.
Claim 8
Dependent Claim
94 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate and an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer.
Claim 9
Dependent Claim
114 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer is used as said avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 10
Dependent Claim
114 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer is used as said avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 11
Dependent Claim
121 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond is used as said p-semiconductor layer, an n-semiconductor layer is used as said avalanche inducing layer, and said metal layer has a thickness not greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 12
Dependent Claim
121 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond is used as said p-semiconductor layer, an n-semiconductor layer is used as said avalanche inducing layer, and said metal layer has a thickness not greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 13
Dependent Claim
116 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor diamond layer is used as said avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 14
Dependent Claim
116 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and an n-semiconductor diamond layer is used as said avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 15
Dependent Claim
124 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor diamond layer is used and said electron avalanche inducing layer and said metal layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 16
Dependent Claim
124 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor diamond layer is used and said electron avalanche inducing layer and said metal layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 17
Dependent Claim
126 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said semiconductor layer and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 18
Dependent Claim
126 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said semiconductor layer and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 19
Dependent Claim
134 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer and said metal compound layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 20
Dependent Claim
134 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer and said metal compound layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 21
Dependent Claim
117 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor is used as said electron avalanche inducing layer and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 22
Dependent Claim
117 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor is used as said electron avalanche inducing layer and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 23
Dependent Claim
126 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor is used as said electron avalanche inducing layer and said metal compound layer has a thickness no greater than 100 Å and has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 24
Dependent Claim
126 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor is used as said electron avalanche inducing layer and said metal compound layer has a thickness no greater than 100 Å and has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 25
Dependent Claim
118 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor diamond is used as said electron avalanche inducing layer, and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 26
Dependent Claim
118 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor diamond is used as said electron avalanche inducing layer, and said metal compound layer has a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 27
Dependent Claim
136 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor diamond is used as said electron avalanche inducing layer, and said metal compound layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 28
Dependent Claim
136 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a pn junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor diamond is used as said electron avalanche inducing layer, and said metal compound layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap width of said p-semiconductor layer.
Claim 29
Dependent Claim
128 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap.
Claim 30
Dependent Claim
128 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer, and said metal layer has a work function no greater than an energy band gap.
Claim 31
Dependent Claim
137 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer, and said metal layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap.
Claim 32
Dependent Claim
137 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, wherein said p-semiconductor layer is composed of a diamond layer, an electron avalanche inducing layer so formed as to constitute a Schottky junction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer and a metal layer on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and a Schottky electrode with a thickness no greater than 500 Å is used as said electron avalanche inducing layer, and said metal layer has a thickness no greater than 100 Å and a work function no greater than an energy band gap.
Claim 33
Dependent Claim
105 words
AN electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, and an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semi-conductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer.
Claim 34
Dependent Claim
105 words
AN electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, and an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semi-conductor layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer.
Claim 35
Dependent Claim
135 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, and an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal layer has a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 36
Dependent Claim
135 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, and an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, and an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal layer has a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 37
Dependent Claim
142 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal layer has a thickness no greater than 100 Å and with a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 38
Dependent Claim
142 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal layer has a thickness no greater than 100 Å and with a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 39
Dependent Claim
135 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal compound layer has a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 40
Dependent Claim
135 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal compound layer has a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 41
Dependent Claim
143 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal compound layer has a thickness no greater than 100 Å and a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 42
Dependent Claim
143 words
An electron emitting device comprising a p-semiconductor layer formed on a semiconductor substrate, an electron avalanche inducing layer so formed as to constitute a heterojunction with said p-semiconductor layer for inducing an electron avalanche breakdown in cooperation with said p-semiconductor layer, and a metal compound layer formed on said electron avalanche inducing layer, wherein electron emission is achieved by application of a reverse bias between said p-semiconductor layer and said electron avalanche inducing layer; and wherein a diamond layer is used as said p-semiconductor layer, an n-semiconductor layer produced by a material different from the diamond and having an energy band gap no greater than the diamond is used as said electron avalanche inducing layer, and said metal compound layer has a thickness no greater than 100 Å and a work function no greater than an energy bandgap width of said p-semiconductor layer.
Claim 43
Dependent Claim
70 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer.
Claim 44
Dependent Claim
70 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer.
Claim 45
Dependent Claim
95 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer formed on said p-semiconductor layer, wherein the electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 46
Dependent Claim
95 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer formed on said p-semiconductor layer, wherein the electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 47
Dependent Claim
98 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 48
Dependent Claim
98 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 49
Dependent Claim
105 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a thickness no greater than 100 Å and a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 50
Dependent Claim
105 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal layer has a thickness no greater than 100 Å and a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 51
Dependent Claim
107 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal compound layer has a thickness no greater than 100 Å and a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 52
Dependent Claim
107 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer and said metal compound layer has a thickness no greater than 100 Å and a work function greater than an energy band gap width of said p-semiconductor layer.
Claim 53
Dependent Claim
69 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a heterojunction with said n-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer.
Claim 54
Dependent Claim
69 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a heterojunction with said n-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer.
Claim 55
Dependent Claim
120 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal layer having a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 56
Dependent Claim
120 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal layer having a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 57
Dependent Claim
122 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal compound layer having a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 58
Dependent Claim
122 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal compound layer having a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 59
Dependent Claim
128 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal layer having a thickness no greater than 100 Å and a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 60
Dependent Claim
128 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal layer having a thickness no greater than 100 Å and a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 61
Dependent Claim
130 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal compound layer having a thickness no greater than 100 Å and a work function no greater than the energy band gap width of said p-semiconductor layer.
Claim 62
Dependent Claim
130 words
An electron emitting device comprising an n-semiconductor layer formed on a semiconductor substrate, a p-semiconductor layer so formed as to constitute a hetero pn junction with said n-semiconductor layer, a metal compound layer formed on said p-semiconductor layer, wherein electron emission from said p-semiconductor layer is achieved by application of a forward bias between said p-semiconductor layer and said n-semiconductor layer and a surface of negative electron affinity state; and wherein a diamond layer is used as said p-semiconductor layer, said layer produced by a material different from the diamond and having an energy band gap width no greater than the diamond, said metal compound layer having a thickness no greater than 100 Å and a work function no greater than the energy band gap width of said p-semiconductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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