US4259678A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing same, as well as a pick-up device and a display device having such a semiconductor device
Assignee: US Philips Corp
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Filing: 1978-12-21
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Granted: 1981-03-31
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Expires: 1998-12-21
Abstract
Abstract The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra accelerating energy by means of an electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Such cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.
Inventors
- 👤 Gerardus G. P. van Gorkom
- 👤 Arthur M. E. Hoeberechts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:31
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; H01J37/3175; B82Y40/00; H01J1/00; H01J1/02; H01J1/30; H01J1/308; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/3175; H01J2237/31777; H01J2237/31781; H01J2237/31784
Claims Analysis
Total Claims: 76
Claim 1
Independent Claim
106 words
A semiconductor device used as a cathode for generating an electron flow comprising a semiconductor body having a p-n junction, a depletion zone of said p-n junction adjoining at least a surface of said semiconductor body, means for applying a reverse voltage across said p-n junction to generate avalanche multiplication of electrons from said semiconductor body, an electrically insulating layer provided on said surface of said semiconductor body, at least one aperture provided in said insulating layer for exposing at least part of said depletion zone, and electrode means formed on said insulating layer at an edge of said aperture for accelerating electrons through said aperture.
Claim 2
Dependent Claim
106 words
A semiconductor device used as a cathode for generating an electron flow comprising a semiconductor body having a p-n junction, a depletion zone of said p-n junction adjoining at least a surface of said semiconductor body, means for applying a reverse voltage across said p-n junction to generate avalanche multiplication of electrons from said semiconductor body, an electrically insulating layer provided on said surface of said semiconductor body, at least one aperture provided in said insulating layer for exposing at least part of said depletion zone, and electrode means formed on said insulating layer at an edge of said aperture for accelerating electrons through said aperture.
Claim 3
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein said p-n junction terminates at said surface where said depletion zone adjoins.
Claim 4
Dependent Claim
64 words
A semiconductor device according to claim 2, wherein said p-n junction is formed between a lower doped first region of a first conductivity type and a more highly doped second region of a second conductivity type, and a surface layer having a higher doping concentration of said first conductivity type than said first region is present at least at an area of said aperture.
Claim 5
Dependent Claim
31 words
A semiconductor device according to claim 3, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 6
Dependent Claim
33 words
A semiconductor device according to claim 4, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 5, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 8
Dependent Claim
13 words
A semiconductor device according to claim 6, wherein said semiconductor body is silicon.
Claim 9
Dependent Claim
14 words
A semiconductor device according to claim 7, wherein said electrode means is polycrystalline silicon.
Claim 10
Dependent Claim
29 words
A semiconductor device according to claim 8, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 11
Dependent Claim
21 words
A semiconductor device according to claim 9, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 12
Dependent Claim
64 words
A semiconductor device according to claim 1, wherein said p-n junction is formed between a lower doped first region of a first conductivity type and a more highly doped second region of a second conductivity type, and a surface layer having a higher doping concentration of said first conductivity type than said first region is present at least at an area of said aperture.
Claim 13
Dependent Claim
31 words
A semiconductor device according to claim 11, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 14
Dependent Claim
33 words
A semiconductor device according to claim 12, wherein said aperture is formed in a narrow gap having a width dimension of th same order of magnitude as a thickness of said insulating layer.
Claim 15
Dependent Claim
18 words
A semiconductor device according to claim 13, wherein said aperture cross said p-n junction substantially at right angles.
Claim 16
Dependent Claim
13 words
A semiconductor device according to claim 14, wherein said semiconductor body is silicon.
Claim 17
Dependent Claim
14 words
A semiconductor device according to claim 15, wherein said electrode means is polycrystalline silicon.
Claim 18
Dependent Claim
29 words
A semiconductor device according to claim 16, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 19
Dependent Claim
21 words
A semiconductor device according to claim 17, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 20
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 21
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 22
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 23
Dependent Claim
13 words
A semiconductor device according to claim 1, wherein said semiconductor body is silicon.
Claim 24
Dependent Claim
14 words
A semiconductor device according to claim 1, wherein said electrode means is polycrystalline silicon.
Claim 25
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 26
Dependent Claim
21 words
A semiconductor device according to claim 24, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 27
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein a recess is present in said semiconductor body at least at said aperture, said depletion zone adjoining a surface of said recess.
Claim 28
Dependent Claim
20 words
A semiconductor device according to claim 26, wherein said p-n junction terminates at said surface where said depletion zone adjoins.
Claim 29
Dependent Claim
64 words
A semiconductor device according to claim 27, wherein said p-n junction is formed between a lower doped first region of a first conductivity type and a more highly doped second region of a second conductivity type, and a surface layer having a higher doping concentration of said first conductivity type than said first region is present at least at an area of said aperture.
Claim 30
Dependent Claim
31 words
A semiconductor device according to claim 28, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 31
Dependent Claim
33 words
A semiconductor device according to claim 29, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 32
Dependent Claim
18 words
A semiconductor device according to claim 30, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 33
Dependent Claim
13 words
A semiconductor device according to claim 31, wherein said semiconductor body is silicon.
Claim 34
Dependent Claim
14 words
A semiconductor device according to claim 32, wherein said electrode means is polycrystalline silicon.
Claim 35
Dependent Claim
29 words
A semiconductor device according to claim 33, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 36
Dependent Claim
21 words
A semiconductor device according to claim 34, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 37
Dependent Claim
64 words
A semiconductor device according to claim 26, wherein said p-n junction is formed between a lower doped first region of a first conductivity type and a more highly doped second region of a second conductivity type, and a surface layer having a higher doping concentration of said first conductivity type than said first region is present at least at an area of said aperture.
Claim 38
Dependent Claim
31 words
A semiconductor device according to claim 36, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 39
Dependent Claim
33 words
A semiconductor device according to claim 37, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 40
Dependent Claim
18 words
A semiconductor device according to claim 38, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 41
Dependent Claim
13 words
A semiconductor device according to claim 39, wherein said semiconductor body is silicon.
Claim 42
Dependent Claim
14 words
A semiconductor device according to claim 40, wherein said electrode means is polycrystalline silicon.
Claim 43
Dependent Claim
29 words
A semiconductor device according to claim 41, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 44
Dependent Claim
21 words
A semiconductor device according to claim 42, wherein said material for reducing election work function includes one of cesium or barium.
Claim 45
Dependent Claim
31 words
A semiconductor device according to claim 26, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 46
Dependent Claim
33 words
A semiconductor device according to claim 26, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 47
Dependent Claim
18 words
A semiconductor device according to claim 26, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 48
Dependent Claim
13 words
A semiconductor device according to claim 26, wherein said semiconductor body is silicon.
Claim 49
Dependent Claim
14 words
A semiconductor device according to claim 26, wherein said electrode means is polycrystalline silicon.
Claim 50
Dependent Claim
29 words
A semiconductor device according to claim 26, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 51
Dependent Claim
21 words
A semiconductor device according to claim 49, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 52
Dependent Claim
50 words
A semiconductor device according to claim 1, wherein a recess is present in said semiconductor body and at least a part of an edge of said aperture in said insulating layer coincides substantially with a wall of said recess, said wall forming said surface at which said depletion zone adjoins.
Claim 53
Dependent Claim
20 words
A semiconductor device according to claim 51, wherein said p-n junction terminates at said surface where said depletion zone adjoins.
Claim 54
Dependent Claim
64 words
A semiconductor device according to claim 52, wherein said p-n junction is formed between a lower doped first region of a first conductivity type and a more highly doped second region of a second conductivity type, and a surface layer having a higher doping concentration of said first conductivity type than said first region is present at least at an area of said aperture.
Claim 55
Dependent Claim
31 words
A semiconductor device according to claim 53, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 56
Dependent Claim
33 words
A semiconductor device according to claim 54, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 57
Dependent Claim
18 words
A semiconductor device according to claim 55, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 58
Dependent Claim
13 words
A semiconductor device according to claim 56, wherein said semiconductor body is silicon.
Claim 59
Dependent Claim
14 words
A semiconductor device according to claim 57, wherein said electrode means is polycrystalline silicon.
Claim 60
Dependent Claim
29 words
A semiconductor device according to claim 58, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 61
Dependent Claim
21 words
A semiconductor device according to claim 59, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 62
Dependent Claim
64 words
A semiconductor device according to claim 51, wherein said p-n junction is formed between a lower doped first region of a first conductivity type and a more highly doped second region of a second conductivity type, and a surface layer having a higher doping concentration of said first conductivity type than said first region is present at least at an area of said aperture.
Claim 63
Dependent Claim
31 words
A semiconductor device according to claim 61, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 64
Dependent Claim
33 words
A semiconductor device according to claim 63, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 65
Dependent Claim
18 words
A semiconductor device according to claim 63, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 66
Dependent Claim
13 words
A semiconductor device according to claim 64, wherein said semiconductor body is silicon.
Claim 67
Dependent Claim
14 words
A semiconductor device according to claim 65, wherein said electrode means is polycrystalline silicon.
Claim 68
Dependent Claim
29 words
A semiconductor device according to claim 66, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 69
Dependent Claim
21 words
A semiconductor device according to claim 67, wherein said material for reducing electron work function includes one of cesium or barium.
Claim 70
Dependent Claim
31 words
A semiconductor device according to claim 51, wherein said electrode means comprises a conductive layer provided on said insulating layer at least at a portion of said edge of said aperture.
Claim 71
Dependent Claim
33 words
A semiconductor device according to claim 51, wherein said aperture is formed in a narrow gap having a width dimension of the same order of magnitude as a thickness of said insulating layer.
Claim 72
Dependent Claim
18 words
A semiconductor device according to claim 51, wherein said aperture crosses said p-n junction substantially at right angles.
Claim 73
Dependent Claim
13 words
A semiconductor device according to claim 51, wherein said semiconductor body is silicon.
Claim 74
Dependent Claim
14 words
A semiconductor device according to claim 51, wherein said electrode means is polycrystalline silicon.
Claim 75
Dependent Claim
29 words
A semiconductor device according to claim 51, wherein said semiconductor body is covered at least at an area of said aperture with a material for reducing electron work function.
Claim 76
Dependent Claim
21 words
A semiconductor device according to claim 74, wherein said material for reducing electron work function includes one of cesium or barium.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-30 | 1984-09-29 | 1985-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-30 | 1988-09-29 | 1989-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-30 | 1992-09-29 | 1993-03-31 | $7700.00 | Window Closed / Lapsed |