US5031015A
Expired / Lapsed
US
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Solid-state heterojunction electron beam generator
Assignee: Canon Inc
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Filing: 1990-08-07
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Granted: 1991-07-09
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Expires: 2010-08-07
Abstract
Abstract A solid-state electron beam generator has a hetero bipolar structure comprising an emitter region having a first band gap, a base region having a second band gap narrower than the first band gap, and a collector region having an electron-emitting surface. Electrons are injected from the emitter region into the base region while a backward bias voltage being applied between the base region and the collector region. In consequence, electrons are emitted from the electron-emitting surface of the collector region. The emitter region is constituted by an N-type Al x Ga 1-x ) As layer (0<x≦1) having the first band gap and formed on an n-type or n + -type GaAs substrate or a semi-insulating GaAs substrate, the base region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having the second band gap, and the collector region is constituted by an n-type Al t Ga.sub.(1-t) As layer (0≦t≦1) formed on the n-type or n + -type GaAs substrate or a semi-insulating GaAs substrate.
Inventors
- 👤 Mamoru Miyawaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:04
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/308
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
110 words
A solid-state electron beam generator having: a hetero bipolar structure comprising an emitted region having a first band gap, a base region having (i) a second band gap narrower than said first band gap and (ii) a base region electrode, and a collector region having (i) an electron-emitting surface and (ii) a collector region electrode; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region electrode and said collector region electrode; wherein said electrons enter the collector region from the base region, and are accelerated to said electron emitting surface, whereby they are emitted from said electron-emitting surface.
Claim 2
Dependent Claim
110 words
A solid-state electron beam generator having: a hetero bipolar structure comprising an emitted region having a first band gap, a base region having (i) a second band gap narrower than said first band gap and (ii) a base region electrode, and a collector region having (i) an electron-emitting surface and (ii) a collector region electrode; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region electrode and said collector region electrode; wherein said electrons enter the collector region from the base region, and are accelerated to said electron emitting surface, whereby they are emitted from said electron-emitting surface.
Claim 3
Dependent Claim
88 words
A solid-state electron beam generator according to claim 1, wherein said emitter region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap, and forming a substrate selected from the group consisting of an n-type, n + -type and semi-insulating GaAs substrates, said base region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap, and said collector region is constituted by an n-type Al t Ga.sub.(1-t) As (0≦t≦1) formed on one of said selected substrates.
Claim 4
Dependent Claim
29 words
A solid-state electron beam generator according to claim 1, wherein a material containing an alkali metal is diffused in or deposited to said electron-emitting surface of said collector region.
Claim 5
Dependent Claim
56 words
A solid-state electron beam generator according to claim 1, wherein said P-type Al z Ga.sub.(1-z) As layer (0≦z<x) constituting said base region is provided with a resonance tunnel section composed in sequence of a non-doped Al y Ga.sub.(1-y) As layer, a non-doped Al s Ga.sub.(1-s) As layer and a non-doped Al y Ga.sub.(1-y) As layer (0≦s<y≦1).
Claim 6
Dependent Claim
33 words
A solid-state electron beam generator according to claim 2, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 7
Dependent Claim
59 words
A solid-state electron beam generator having: a heterojunction comprising a first region having a first band gap, and a second region having a second band gap narrower than said first band gap; and electrons from said first region being injected into said second region, thereby causing said electrons to be emitted from an end surface of said second region.
Claim 8
Dependent Claim
59 words
A solid-state electron beam generator having: a heterojunction comprising a first region having a first band gap, and a second region having a second band gap narrower than said first band gap; and electrons from said first region being injected into said second region, thereby causing said electrons to be emitted from an end surface of said second region.
Claim 9
Dependent Claim
68 words
A solid-state electron beam generator according to claim 6, wherein said first region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap, and forming a substrate selected from the group consisting of an n-type, n + -type and semi-insulating GaAs substrates, and said second region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap.
Claim 10
Dependent Claim
29 words
A solid-state electron beam generator according to claim 6, wherein a material containing an alkali metal is diffused in or deposited to the electron-emitting surface of said second region.
Claim 11
Dependent Claim
55 words
A solid-state electron beam generator according to claim 6, wherein said P-type Al x Ga.sub.(1-z) As layer (0≦z<x) constituting said base region is provided with a resonance tunnel section composed in sequence of a non-doped Al y Ga.sub.(1-y) As layer, a non-doped Al s Ga.sub.(1-s) As layer and a non-doped Al.sub. Ga.sub.(1-y) As layer (0≦s<y≦1).
Claim 12
Dependent Claim
33 words
A solid-state electron beam generator according to claim 7, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 13
Dependent Claim
88 words
A solid-state electron beam generator comprising: a hetero bipolar semiconductor formed on a GaAs epitaxial film on a Si substrate, said semiconductor comprising an emitter region having a first band gap, a base region having a second band gap narrower than said first band gap, and a collector region having an electron-emitting surface; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region and said collector region; whereby said electrons are emitted from said electron-emitting surface.
Claim 14
Dependent Claim
88 words
A solid-state electron beam generator comprising: a hetero bipolar semiconductor formed on a GaAs epitaxial film on a Si substrate, said semiconductor comprising an emitter region having a first band gap, a base region having a second band gap narrower than said first band gap, and a collector region having an electron-emitting surface; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region and said collector region; whereby said electrons are emitted from said electron-emitting surface.
Claim 15
Dependent Claim
69 words
A solid-state electron beam generator according to claim 11, wherein said emitter region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap and formed on said Si substrate, said base region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap, and said collector region is constituted by an n-type Al t Ga.sub.(1-t) As layer (0≦t≦1).
Claim 16
Dependent Claim
29 words
A solid-state electron beam generator according to claim 1, wherein a material containing an alkali metal is diffused in or deposited to said electron-emitting surface of said collector region.
Claim 17
Dependent Claim
56 words
A solid-state electron beam generator according to claim 11, wherein said P-type Al z Ga.sub.(1-z) As layer (0≦z<x) constituting said base region is provided with a resonance tunnel section composed in sequence of a non-doped Al y Ga.sub.(1-y) As layer, a non-doped Al s Ga.sub.(1-s) As layer and a non-doped Al y Ga.sub.(1-y) As layer (0≦s<y≦1).
Claim 18
Dependent Claim
33 words
A solid-state electron beam generator according to claim 12, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 19
Dependent Claim
74 words
A solid-state electron beam generator comprising: a heterojunction structure formed on a GaAs epitaxial film on a Si substrate, said hetero junction structure comprising a first region having a first band gap, and a second region having a second band gap narrower than said first band gap; and electrons from said first region being injected into said second region, thereby causing said electrons to be emitted from an end surface of said second region.
Claim 20
Dependent Claim
74 words
A solid-state electron beam generator comprising: a heterojunction structure formed on a GaAs epitaxial film on a Si substrate, said hetero junction structure comprising a first region having a first band gap, and a second region having a second band gap narrower than said first band gap; and electrons from said first region being injected into said second region, thereby causing said electrons to be emitted from an end surface of said second region.
Claim 21
Dependent Claim
55 words
A solid-state electron beam generator according to claim 16, wherein said first region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap and formed on said Si substrate, and said second region is constituted by a P-type Al z Ga.sub.(1-z) -As layer (0≦z<x) having said second band gap.
Claim 22
Dependent Claim
29 words
A solid-state electron beam generator according to claim 16, wherein a material containing an alkali metal is diffused in or deposited to the electron-emitting surface of said second region.
Claim 23
Dependent Claim
56 words
A solid-state electron beam generator according to claim 16, wherein said P-type Al x Ga.sub.(1-z) As layer (0≦z<x) constituting said base region is provided with a resonance tunnel section composed in sequence of a non-doped Al y Ga.sub.(1-y) As layer, a non-doped Al s Ga.sub.(1-s) As layer and a non-doped Al y Ga.sub.(1-y) As layer (0≦s<y≦1).
Claim 24
Dependent Claim
33 words
A solid-state electron beam generator according to claim 17, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 25
Dependent Claim
142 words
A solid-state electron beam generator having: a hetero bipolar structure comprising an emitter region having a first band gap, a base region having (i) a second band gap narrower than said first band gap, and (ii) base region electrode, a collector region having (i) an electron-emitting surface and (ii) a collector region electrode, and a graded region between said emitter region and said base region and formed from a predetermined material in which the crystal mixing ratio is changed progressively in the direction of said base region; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region electrode and said collector region electrode; wherein said electrons enter the collector region from the base region, and are accelerated to said electron emitting surface, whereby they are emitted from said electron-emitting surface.
Claim 26
Dependent Claim
142 words
A solid-state electron beam generator having: a hetero bipolar structure comprising an emitter region having a first band gap, a base region having (i) a second band gap narrower than said first band gap, and (ii) base region electrode, a collector region having (i) an electron-emitting surface and (ii) a collector region electrode, and a graded region between said emitter region and said base region and formed from a predetermined material in which the crystal mixing ratio is changed progressively in the direction of said base region; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region electrode and said collector region electrode; wherein said electrons enter the collector region from the base region, and are accelerated to said electron emitting surface, whereby they are emitted from said electron-emitting surface.
Claim 27
Dependent Claim
85 words
A solid-state electron beam generator according to claim 21, wherein said emitter region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap, and forming a substrate selected from the group consisting of an n-type, a n + -type GaAs substrate, and semi-insulating GaAs substrates, said base region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap, and said collector region is constituted by an n-type Al t Ga.sub.(1-t) As layer (0≦t≦1).
Claim 28
Dependent Claim
29 words
A solid-state electron beam generator according to claim 21, wherein a material containing an alkali metal is diffused in or deposited to said electron-emitting surface of said collector region.
Claim 29
Dependent Claim
30 words
A solid-state electron beam generator according to claim 22, wherein said graded region is formed by progressively changing the crystal mixing ratio x of said Al x Ga.sub.(1-x) As layer.
Claim 30
Dependent Claim
33 words
A solid-state electron beam generator according to claim 22, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 31
Dependent Claim
83 words
A solid-state electron beam generator having: a heterojunction comprising a first region having a first band gap, a second region having a second band gap narrower than said first band gap, and a graded region formed of a predetermined material in which the crystal mixing ratio is changed progressively in the direction of the second region; and electrons being injected from said first region into said second region, thereby causing said electrons to be emitted from an electron-emitting surface of said second region.
Claim 32
Dependent Claim
83 words
A solid-state electron beam generator having: a heterojunction comprising a first region having a first band gap, a second region having a second band gap narrower than said first band gap, and a graded region formed of a predetermined material in which the crystal mixing ratio is changed progressively in the direction of the second region; and electrons being injected from said first region into said second region, thereby causing said electrons to be emitted from an electron-emitting surface of said second region.
Claim 33
Dependent Claim
63 words
A solid-state electron beam generator according to claim 26, wherein said first region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap and formed a substrate selected from an n-type n + -type, semi-insulating GaAs substrates, and said second region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap.
Claim 34
Dependent Claim
29 words
A solid-state electron beam generator according to claim 26, wherein a material containing an alkali metal is diffused in or deposited to the electron-emitting surface of said second region.
Claim 35
Dependent Claim
30 words
A solid-state electron beam generator according to claim 27, wherein said graded region is formed by progressively changing the crystal mixing ratio x of said Al x Ga.sub.(1-x) As layer.
Claim 36
Dependent Claim
33 words
A solid-state electron beam generator according to claim 27, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 37
Dependent Claim
146 words
A solid-state electron beam generator comprising: a hetero bipolar semiconductor formed on a GaAs epitaxial film on a Si substrate, said semiconductor comprising an emitter region having a first band gap, a base region having (i) a second band gap narrower than said first band gap and (ii) a base region electrode, a collector region having (i) an electron-emitting surface and (ii) a collector region electrode, and a graded region formed of a predetermined material in which the crystal mixing ratio is changed progressively in the direction of the base region; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region electrode and said collector region electrode; wherein said electrons enter the collector region from the base region, and are accelerated to said electron emitting surface whereby they are emitted from said electron-emitting surface.
Claim 38
Dependent Claim
146 words
A solid-state electron beam generator comprising: a hetero bipolar semiconductor formed on a GaAs epitaxial film on a Si substrate, said semiconductor comprising an emitter region having a first band gap, a base region having (i) a second band gap narrower than said first band gap and (ii) a base region electrode, a collector region having (i) an electron-emitting surface and (ii) a collector region electrode, and a graded region formed of a predetermined material in which the crystal mixing ratio is changed progressively in the direction of the base region; electrons from said emitter region being injected into said base region; and a backward bias voltage being applied between said base region electrode and said collector region electrode; wherein said electrons enter the collector region from the base region, and are accelerated to said electron emitting surface whereby they are emitted from said electron-emitting surface.
Claim 39
Dependent Claim
69 words
A solid-state electron beam generator according to claim 31, wherein said emitter region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap and formed on said Si substrate, said base region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap, and said collector region is constituted by an n-type Al t Ga.sub.(1-t) As layer (0≦t≦1).
Claim 40
Dependent Claim
29 words
A solid-state electron beam generator according to claim 31, wherein a material containing an alkali metal is diffused in or deposited to said electron-emitting surface of said collector region.
Claim 41
Dependent Claim
30 words
A solid-state electron beam generator according to claim 32, wherein said graded region is formed by progressively changing the crystal mixing ratio x of said Al x Ga.sub.(1-x) As layer.
Claim 42
Dependent Claim
33 words
A solid-state electron beam generator according to claim 32, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
Claim 43
Dependent Claim
96 words
A solid-state electron beam generator comprising: a heterojunction structure formed on a GaAs epitaxial film on a Si substrate and constituted by a first region having a first band gap, a second region having a second band gap narrower than said first band gap, and a graded region formed of a predetermined material in which the crystal mixing ratio is changed progressively in the direction of the second region; and electrons from said first region being injected into said second region, thereby causing said electrons to be emitted from an electron-emitting surface of said second region.
Claim 44
Dependent Claim
96 words
A solid-state electron beam generator comprising: a heterojunction structure formed on a GaAs epitaxial film on a Si substrate and constituted by a first region having a first band gap, a second region having a second band gap narrower than said first band gap, and a graded region formed of a predetermined material in which the crystal mixing ratio is changed progressively in the direction of the second region; and electrons from said first region being injected into said second region, thereby causing said electrons to be emitted from an electron-emitting surface of said second region.
Claim 45
Dependent Claim
55 words
A solid-state electron beam generator according to claim 36, wherein said first region is constituted by an N-type Al x Ga.sub.(1-x) As layer (0<x≦1) having said first band gap, and forming on said Si substrate, and said second region is constituted by a P-type Al z Ga.sub.(1-z) As layer (0≦z<x) having said second band gap.
Claim 46
Dependent Claim
29 words
A solid-state electron beam generator according to claim 36, wherein a material containing an alkali metal is diffused in or deposited to the electron-emitting surface of said second region.
Claim 47
Dependent Claim
30 words
A solid-state electron beam generator according to claim 37, wherein said graded region is formed by progressively changing the crystal mixing ratio x of said Al x Ga.sub.(1-x) As layer.
Claim 48
Dependent Claim
33 words
A solid-state electron beam generator according to claim 37, wherein oxygen is charged into a predetermined region of said N-type Al x Ga.sub.(1-x) As layer (0<x≦1) so as to form an inert region.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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