Patent US5202290A successfully refreshed from Google Patents.
US5202290A
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Process for manufacture of quantum dot and quantum wire semiconductors
Assignee: Individual
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Filing: 1991-12-02
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Granted: 1993-04-13
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Expires: 2011-12-02
Abstract
Abstract Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface layer is prepared by anodizing an aluminum substrate in an acid bath. Then a metal capable of forming a semiconductor compound is electrodeposited into the surface micropores, the oxide is partially or wholly etched away, and the deposited metal is reacted with a liquid or gaseous reagent to convert it chemically to a semiconducting compound. By the process of the invention, there are produced quantum dot or quantum wire semiconductors in the form of an array of substantially mutually parallel, substantially uniform-sized rods of semiconductor material protruding from an electrically conductive substrate, each rod having a diameter less than 100 nanometers.
Inventors
- 👤 Martin Moskovits
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; B; B82; B82Y; B82Y10/00; H10P14/203; H10P14/26; H10P14/265; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3451; H10P14/3452; Y; Y10; Y10S; Y10S148/00; Y10S148/122; Y10S438/00; Y10S438/962
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
143 words
A process for preparing nanosized quantum dot or quantum wire semiconductors in the form of an array of substantially mutually parallel, substantially uniform-sized rods of semiconducting material, said process comprising the steps of: providing an aluminum or aluminum alloy substrate in sheet or foil form; anodizing said substrate electrolytically in an acid bath, to deposit thereon an oxide film having micropores of substantially mutually parallel axial disposition and substantially uniform diameter in the range from about 1 to about 500 nanometers; electrolytically depositing in said pores at least one metal capable of forming a semiconductor material on appropriate chemical reaction; etching away at least a portion of said oxide film from the substrate surface to expose at least a portion of the deposited metal; and chemically reacting the exposed metal with a gaseous or liquid chemical reactant to form a semiconductor compound therefrom.
Claim 2
Dependent Claim
143 words
A process for preparing nanosized quantum dot or quantum wire semiconductors in the form of an array of substantially mutually parallel, substantially uniform-sized rods of semiconducting material, said process comprising the steps of: providing an aluminum or aluminum alloy substrate in sheet or foil form; anodizing said substrate electrolytically in an acid bath, to deposit thereon an oxide film having micropores of substantially mutually parallel axial disposition and substantially uniform diameter in the range from about 1 to about 500 nanometers; electrolytically depositing in said pores at least one metal capable of forming a semiconductor material on appropriate chemical reaction; etching away at least a portion of said oxide film from the substrate surface to expose at least a portion of the deposited metal; and chemically reacting the exposed metal with a gaseous or liquid chemical reactant to form a semiconductor compound therefrom.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the substrate is anodized in a dilute solution of strong acid.
Claim 4
Dependent Claim
29 words
The process of claim 2 wherein the strong acid is sulphuric acid, phosphoric acid, oxalic acid, chromic acid or a mixture of two or more of such strong acids.
Claim 5
Dependent Claim
21 words
The process of claim 1 wherein the metal capable of forming the semiconductor material is aluminum, cadmium, indium, gallium or zinc.
Claim 6
Dependent Claim
19 words
The process of claim 4 wherein the metal is annealed after deposition in the pores of the oxide layer.
Claim 7
Dependent Claim
27 words
The process of claim 1 wherein the metal capable of forming the semiconductor is aluminum or gallium, and is deposited into the pores from a non-aqueous electrolyte.
Claim 8
Dependent Claim
20 words
The process of claim 1 wherein, after deposition of the metal, the oxide film is etched away with an acid.
Claim 9
Dependent Claim
23 words
The process of claim 7 wherein the aluminum or aluminum alloy metal substrate is left substantially intact whilst the oxide film is etched.
Claim 10
Dependent Claim
18 words
The process of claim 8 wherein the acid etchant is a mixture of phosphoric acid and chromic acid.
Claim 11
Dependent Claim
17 words
The process of claim 1 wherein the chemical treatment of the exposed metal is conducted to completion.
Claim 12
Dependent Claim
31 words
The process of claim 10 wherein the exposed metal for the semiconductor material is cadmium and the chemical treatment is with gaseous sulphur or hydrogen sulphide, to form semiconducting cadmium sulphide.
Claim 13
Dependent Claim
27 words
The process of claim 10 wherein the exposed metal for the semiconductor material is gallium and the chemical treatment is with arsine, to form semiconducting gallium arside.
Claim 14
Dependent Claim
33 words
The process of claim 7 including the additional steps of depositing a conductive metal film on the exposed ends of the metal rods, and etching away the aluminum or aluminum alloy metallic substrate.
Claim 15
Dependent Claim
14 words
The process of claim 13 wherein the conductive metal film is a gold film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-12 | 1996-10-12 | 1997-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-12 | 2000-10-12 | 2001-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-12 | 2004-10-12 | 2005-04-13 | $7700.00 | Window Closed / Lapsed |